M13S2561616A-6BIG2T

256Mb DDR SDRAM Ind.
Part Description

DDR SDRAM 256Mbit 4M×16 166MHz 60‑BGA Industrial

Quantity 309 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package60-BGAMemory FormatDRAMTechnologyDRAM
Memory Size256 MbitAccess Time15 nsGradeIndustrial
Clock Frequency166 MHzVoltage2.3V ~ 2.7VMemory TypeVolatile
Operating Temperature-40°C – 85°CWrite Cycle Time Word Page15 nsPackaging60-BGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization4M x 16
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.24

Overview of M13S2561616A-6BIG2T – DDR SDRAM 256Mbit 4M×16 166MHz 60‑BGA Industrial

The M13S2561616A-6BIG2T is a JEDEC‑qualified DDR SDRAM device organized as 4M × 16 bits, providing 268.4 Mbit of volatile memory in a compact 60‑ball BGA surface‑mount package. It implements a double‑data‑rate architecture with differential clock inputs and bi‑directional data strobes to deliver two data transfers per clock cycle at a 166 MHz maximum operating clock frequency.

Designed for industrial applications, the device operates over a −40 °C to 85 °C ambient range and accepts a supply range of 2.3 V to 2.7 V (2.5 V ±0.2 V), offering a compact, low‑voltage memory option for embedded and board‑level designs requiring JEDEC compliance and sustained high‑rate data transfers.

Key Features

  • Core Architecture
    4M × 16 organization with four internal banks and double‑data‑rate operation for two data transfers per clock cycle.
  • High‑rate Performance
    Rated for 166 MHz clock frequency (DDR333) with typical access and write cycle timings of 15 ns, and selectable CAS latencies of 2, 2.5, and 3.
  • Data I/O and Clocking
    Bi‑directional DQS data strobe (LDQS/UDQS) with DQS edge/center alignment behavior, differential clock inputs (CLK/CLK̄), and on‑die DLL to align DQ/DQS with CLK transitions.
  • Burst and Timing Flexibility
    Burst lengths of 2, 4, and 8 with sequential and interleave burst types; all inputs except data and DM are sampled on the rising edge of CLK.
  • Power and Signaling
    VDD/VDDQ = 2.5 V ±0.2 V (listed supply range 2.3 V–2.7 V) with SSTL_2‑compatible 2.5 V I/O signaling and data mask (DM) inputs for write masking.
  • Reliability and Refresh
    JEDEC qualification, auto and self refresh support, and a 7.8 μs refresh interval for standard DRAM retention management.
  • Package and Temperature
    Surface‑mount 60‑ball BGA package with operating ambient temperature range of −40 °C to 85 °C and RoHS compliance.

Typical Applications

  • Industrial Embedded Systems — JEDEC‑qualified DDR SDRAM with −40 °C to 85 °C operation for board‑level memory in industrial controllers and embedded equipment.
  • High‑Speed Buffering and Data Transfers — DDR architecture and 166 MHz clock rating for designs that require efficient parallel data buffering at double data rate.
  • Compact, Board‑Mounted Designs — 60‑BGA surface‑mount package and 2.5 V signaling suited to space‑constrained PCBs and dense memory arrays.

Unique Advantages

  • Industrial Temperature Range: Operation from −40 °C to 85 °C enables deployment in temperature‑challenging environments.
  • JEDEC Qualification: Industry standard qualification simplifies integration and design verification for DDR SDRAM functions.
  • Double‑Data‑Rate Throughput: Two transfers per clock cycle with DQS and DLL alignment improve effective data bandwidth while maintaining signal timing control.
  • Flexible Timing Options: Multiple CAS latencies and burst lengths allow designers to trade latency and throughput to match system requirements.
  • Low‑Voltage Operation: 2.3 V–2.7 V supply (2.5 V nominal) and SSTL_2‑compatible I/O support lower power and standard DDR signaling conventions.
  • Compact BGA Footprint: 60‑ball BGA package for high‑density PCB layouts and surface‑mount assembly processes.

Why Choose M13S2561616A-6BIG2T?

The M13S2561616A-6BIG2T positions itself as a compact, JEDEC‑qualified DDR SDRAM device that combines DDR double‑data‑rate architecture, flexible timing options, and industrial‑grade temperature tolerance. Its 4M × 16 organization, 166 MHz clock rating, and built‑in features such as DLL, DQS, and auto/self refresh provide predictable timing and retention behavior for embedded and board‑level memory needs.

This part is suitable for design teams requiring a low‑voltage (2.5 V nominal) DDR memory in a 60‑BGA package with RoHS compliance and an operating range tailored to industrial deployments. It delivers a balanced mix of performance, integration density, and JEDEC compatibility for long‑term, robust memory implementations.

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