M13S2561616A-6BIG2T
| Part Description |
DDR SDRAM 256Mbit 4M×16 166MHz 60‑BGA Industrial |
|---|---|
| Quantity | 309 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 60-BGA | Memory Format | DRAM | Technology | DRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 15 ns | Grade | Industrial | ||
| Clock Frequency | 166 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 15 ns | Packaging | 60-BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 4M x 16 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.24 |
Overview of M13S2561616A-6BIG2T – DDR SDRAM 256Mbit 4M×16 166MHz 60‑BGA Industrial
The M13S2561616A-6BIG2T is a JEDEC‑qualified DDR SDRAM device organized as 4M × 16 bits, providing 268.4 Mbit of volatile memory in a compact 60‑ball BGA surface‑mount package. It implements a double‑data‑rate architecture with differential clock inputs and bi‑directional data strobes to deliver two data transfers per clock cycle at a 166 MHz maximum operating clock frequency.
Designed for industrial applications, the device operates over a −40 °C to 85 °C ambient range and accepts a supply range of 2.3 V to 2.7 V (2.5 V ±0.2 V), offering a compact, low‑voltage memory option for embedded and board‑level designs requiring JEDEC compliance and sustained high‑rate data transfers.
Key Features
- Core Architecture
4M × 16 organization with four internal banks and double‑data‑rate operation for two data transfers per clock cycle. - High‑rate Performance
Rated for 166 MHz clock frequency (DDR333) with typical access and write cycle timings of 15 ns, and selectable CAS latencies of 2, 2.5, and 3. - Data I/O and Clocking
Bi‑directional DQS data strobe (LDQS/UDQS) with DQS edge/center alignment behavior, differential clock inputs (CLK/CLK̄), and on‑die DLL to align DQ/DQS with CLK transitions. - Burst and Timing Flexibility
Burst lengths of 2, 4, and 8 with sequential and interleave burst types; all inputs except data and DM are sampled on the rising edge of CLK. - Power and Signaling
VDD/VDDQ = 2.5 V ±0.2 V (listed supply range 2.3 V–2.7 V) with SSTL_2‑compatible 2.5 V I/O signaling and data mask (DM) inputs for write masking. - Reliability and Refresh
JEDEC qualification, auto and self refresh support, and a 7.8 μs refresh interval for standard DRAM retention management. - Package and Temperature
Surface‑mount 60‑ball BGA package with operating ambient temperature range of −40 °C to 85 °C and RoHS compliance.
Typical Applications
- Industrial Embedded Systems — JEDEC‑qualified DDR SDRAM with −40 °C to 85 °C operation for board‑level memory in industrial controllers and embedded equipment.
- High‑Speed Buffering and Data Transfers — DDR architecture and 166 MHz clock rating for designs that require efficient parallel data buffering at double data rate.
- Compact, Board‑Mounted Designs — 60‑BGA surface‑mount package and 2.5 V signaling suited to space‑constrained PCBs and dense memory arrays.
Unique Advantages
- Industrial Temperature Range: Operation from −40 °C to 85 °C enables deployment in temperature‑challenging environments.
- JEDEC Qualification: Industry standard qualification simplifies integration and design verification for DDR SDRAM functions.
- Double‑Data‑Rate Throughput: Two transfers per clock cycle with DQS and DLL alignment improve effective data bandwidth while maintaining signal timing control.
- Flexible Timing Options: Multiple CAS latencies and burst lengths allow designers to trade latency and throughput to match system requirements.
- Low‑Voltage Operation: 2.3 V–2.7 V supply (2.5 V nominal) and SSTL_2‑compatible I/O support lower power and standard DDR signaling conventions.
- Compact BGA Footprint: 60‑ball BGA package for high‑density PCB layouts and surface‑mount assembly processes.
Why Choose M13S2561616A-6BIG2T?
The M13S2561616A-6BIG2T positions itself as a compact, JEDEC‑qualified DDR SDRAM device that combines DDR double‑data‑rate architecture, flexible timing options, and industrial‑grade temperature tolerance. Its 4M × 16 organization, 166 MHz clock rating, and built‑in features such as DLL, DQS, and auto/self refresh provide predictable timing and retention behavior for embedded and board‑level memory needs.
This part is suitable for design teams requiring a low‑voltage (2.5 V nominal) DDR memory in a 60‑BGA package with RoHS compliance and an operating range tailored to industrial deployments. It delivers a balanced mix of performance, integration density, and JEDEC compatibility for long‑term, robust memory implementations.
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