M13S5121632A-5TIG2T

512Mb DDR SDRAM Ind.
Part Description

DDR SDRAM 512Mbit 8M×16 200MHz 66‑TSOPII Industrial

Quantity 318 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package66-TSOPIIMemory FormatDRAMTechnologyDRAM
Memory Size512 MbitAccess Time15 nsGradeIndustrial
Clock Frequency200 MHzVoltage2.3V ~ 2.7VMemory TypeVolatile
Operating Temperature-40°C – 85°CWrite Cycle Time Word Page15 nsPackaging66-TSOPII
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization8M x 16
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.28

Overview of M13S5121632A-5TIG2T – DDR SDRAM 512Mbit 8M×16 200MHz 66‑TSOPII Industrial

The M13S5121632A-5TIG2T is an industrial-grade DDR SDRAM device organized as 8M × 16. It implements a double-data-rate architecture with bi-directional data strobe and differential clock inputs, delivering 200 MHz clock operation (DDR400 data rate) for systems that require parallel volatile memory with predictable timing and refresh behavior.

Designed for industrial applications, the device supports JEDEC-qualified DDR SDRAM features including four-bank operation, DLL alignment, selectable CAS latencies, and SSTL_2-compatible 2.5 V I/O while operating across a wide supply range and industrial temperature window.

Key Features

  • Memory Organization 
    8M × 16 organization; product naming indicates 512 Mbit capacity (specifications list 536.9 Mbit).
  • Double-Data-Rate Architecture 
    Two data transfers per clock cycle with bi-directional DQS and differential CLK/CLK̄ inputs for DDR operation.
  • Timing and Burst Flexibility 
    Supports CAS latencies 2, 2.5, 3 and burst lengths of 2, 4, and 8 with sequential and interleave burst types; typical access and write cycle time listed as 15 ns.
  • Four-Bank Operation & DLL 
    Four internal banks and a DLL to align DQ/DQS transitions with CLK for read/write timing control.
  • Supply and I/O Voltage 
    VDD and VDDQ specified at 2.5 V ±0.2 V (specification lists supply range 2.3 V–2.7 V); I/O uses SSTL_2-compatible signaling.
  • Refresh and Power Management 
    7.8 µs refresh interval with Auto and Self refresh support for standard DDR memory maintenance.
  • Package & Mounting 
    66-pin TSOP II surface-mount package (400 mil × 875 mil body, 0.65 mm pitch) for board-level density and automated assembly.
  • Industrial Temperature Range 
    Rated for operation from −40 °C to 85 °C.
  • Standards & Compliance 
    JEDEC-qualified DDR SDRAM series; RoHS compliant and listed as Pb-free in ordering information.

Typical Applications

  • Industrial control systems 
    Provides parallel DDR volatile storage for embedded controllers and logic that require industrial temperature operation and JEDEC DDR timing.
  • Embedded memory subsystems 
    Used where compact, surface-mount DDR memory with selectable CAS latency and burst modes is required.
  • Systems requiring deterministic refresh 
    Auto and Self refresh support and a defined 7.8 µs refresh interval help maintain data integrity in continuous-operation environments.

Unique Advantages

  • Industrial temperature qualification 
    Specified operation from −40 °C to 85 °C supports deployment in harsh and temperature-variable environments.
  • DDR timing flexibility 
    Support for multiple CAS latencies and burst lengths enables designers to optimize throughput and latency for specific system requirements.
  • SSTL_2-compatible I/O 
    2.5 V I/O standard compatibility (VDD/VDDQ = 2.5 V ±0.2 V) simplifies interface design with SSTL_2 host controllers.
  • Surface-mount TSOP II package 
    66-pin TSOPII provides a compact, assembly-friendly footprint for space-constrained PCBs.
  • JEDEC-qualified series 
    Adherence to JEDEC DDR SDRAM specifications ensures predictable behavior and interoperability within DDR memory ecosystems.
  • RoHS compliant / Pb-free 
    Meets environmental compliance expectations for modern manufacturing and assembly.

Why Choose M13S5121632A-5TIG2T?

The M13S5121632A-5TIG2T positions itself as a practical DDR SDRAM option for industrial and embedded designs that need a 512Mbit-class, 8M×16 memory device with DDR timing flexibility and SSTL_2-compatible I/O. Its 200 MHz clock capability, selectable CAS latencies, and four-bank architecture provide the timing control and throughput options required for parallel-memory applications.

With JEDEC-series features, industrial temperature rating, a compact 66-pin TSOP II surface-mount package, and RoHS compliance, this device is suited to long-life industrial designs where stable DDR behavior, supply compatibility, and board-level assembly considerations are important.

Request a quote or submit an inquiry to obtain pricing, availability, and ordering information for the M13S5121632A-5TIG2T. Our team can provide datasheet details and support to help integrate this DDR SDRAM into your design.

Request a Quote

















    No file selected



    Our team will respond within 24 hours.


    I agree to receive newsletters and promotional emails. I can unsubscribe at any time.

    Certifications and Membership
    NQA AS9100 CMYK ANAB
    NQA AS9100 ANAB Badge
    ESD2020 Badge
    ESD2020 Association Badge
    GIDEP Badge
    GIDEP Badge
    Suntsu ERAI MemberVerification
    Suntsu ERAI Member Verification
    Available Shipping Methods
    FedEx
    UPS
    DHL
    Accepted Payment Methods
    American Express
    American Express
    Discover
    Discover
    MasterCard
    MasterCard
    Visa
    Visa
    UnionPay
    UnionPay

    Date Founded: 1998


    Headquarters: Hsinchu Science Park, Hsinchu, Taiwan


    Employees: 400+


    Revenue: $377.8 Million


    Certifications and Memberships: N/A


    Featured Products
    Latest News
    keyboard_arrow_up