M13S5121632A-5TIG2T
| Part Description |
DDR SDRAM 512Mbit 8M×16 200MHz 66‑TSOPII Industrial |
|---|---|
| Quantity | 318 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 66-TSOPII | Memory Format | DRAM | Technology | DRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 15 ns | Grade | Industrial | ||
| Clock Frequency | 200 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 15 ns | Packaging | 66-TSOPII | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 8M x 16 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.28 |
Overview of M13S5121632A-5TIG2T – DDR SDRAM 512Mbit 8M×16 200MHz 66‑TSOPII Industrial
The M13S5121632A-5TIG2T is an industrial-grade DDR SDRAM device organized as 8M × 16. It implements a double-data-rate architecture with bi-directional data strobe and differential clock inputs, delivering 200 MHz clock operation (DDR400 data rate) for systems that require parallel volatile memory with predictable timing and refresh behavior.
Designed for industrial applications, the device supports JEDEC-qualified DDR SDRAM features including four-bank operation, DLL alignment, selectable CAS latencies, and SSTL_2-compatible 2.5 V I/O while operating across a wide supply range and industrial temperature window.
Key Features
- Memory Organization
8M × 16 organization; product naming indicates 512 Mbit capacity (specifications list 536.9 Mbit). - Double-Data-Rate Architecture
Two data transfers per clock cycle with bi-directional DQS and differential CLK/CLK̄ inputs for DDR operation. - Timing and Burst Flexibility
Supports CAS latencies 2, 2.5, 3 and burst lengths of 2, 4, and 8 with sequential and interleave burst types; typical access and write cycle time listed as 15 ns. - Four-Bank Operation & DLL
Four internal banks and a DLL to align DQ/DQS transitions with CLK for read/write timing control. - Supply and I/O Voltage
VDD and VDDQ specified at 2.5 V ±0.2 V (specification lists supply range 2.3 V–2.7 V); I/O uses SSTL_2-compatible signaling. - Refresh and Power Management
7.8 µs refresh interval with Auto and Self refresh support for standard DDR memory maintenance. - Package & Mounting
66-pin TSOP II surface-mount package (400 mil × 875 mil body, 0.65 mm pitch) for board-level density and automated assembly. - Industrial Temperature Range
Rated for operation from −40 °C to 85 °C. - Standards & Compliance
JEDEC-qualified DDR SDRAM series; RoHS compliant and listed as Pb-free in ordering information.
Typical Applications
- Industrial control systems
Provides parallel DDR volatile storage for embedded controllers and logic that require industrial temperature operation and JEDEC DDR timing. - Embedded memory subsystems
Used where compact, surface-mount DDR memory with selectable CAS latency and burst modes is required. - Systems requiring deterministic refresh
Auto and Self refresh support and a defined 7.8 µs refresh interval help maintain data integrity in continuous-operation environments.
Unique Advantages
- Industrial temperature qualification
Specified operation from −40 °C to 85 °C supports deployment in harsh and temperature-variable environments. - DDR timing flexibility
Support for multiple CAS latencies and burst lengths enables designers to optimize throughput and latency for specific system requirements. - SSTL_2-compatible I/O
2.5 V I/O standard compatibility (VDD/VDDQ = 2.5 V ±0.2 V) simplifies interface design with SSTL_2 host controllers. - Surface-mount TSOP II package
66-pin TSOPII provides a compact, assembly-friendly footprint for space-constrained PCBs. - JEDEC-qualified series
Adherence to JEDEC DDR SDRAM specifications ensures predictable behavior and interoperability within DDR memory ecosystems. - RoHS compliant / Pb-free
Meets environmental compliance expectations for modern manufacturing and assembly.
Why Choose M13S5121632A-5TIG2T?
The M13S5121632A-5TIG2T positions itself as a practical DDR SDRAM option for industrial and embedded designs that need a 512Mbit-class, 8M×16 memory device with DDR timing flexibility and SSTL_2-compatible I/O. Its 200 MHz clock capability, selectable CAS latencies, and four-bank architecture provide the timing control and throughput options required for parallel-memory applications.
With JEDEC-series features, industrial temperature rating, a compact 66-pin TSOP II surface-mount package, and RoHS compliance, this device is suited to long-life industrial designs where stable DDR behavior, supply compatibility, and board-level assembly considerations are important.
Request a quote or submit an inquiry to obtain pricing, availability, and ordering information for the M13S5121632A-5TIG2T. Our team can provide datasheet details and support to help integrate this DDR SDRAM into your design.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A