M13S5121632A-6TG2T

The M13S5121632A-6TG2T is a DDR SDRAM memory device organized as 8M × 16 and provided in a 66‑pin TSOPII surface-mount package for commercial‑grade applications. It implements a double‑data‑rate architecture with differential clock inputs and bi‑directional data strobe (DQS) to deliver DDR333‑class operation at a 166 MHz clock rate.

This JEDEC‑qualified, RoHS‑compliant DRAM targets board‑level commercial systems that require parallel DDR SDRAM with selectable CAS latencies, burst operation and standard SSTL_2‑compatible I/O voltage signaling.

Key Features

• Core Architecture Double‑data‑rate architecture enabling two data transfers per clock cycle; includes DLL to align DQ and DQS transitions with CLK transitions and four bank operation.
• Memory Organization & Capacity 536.9 Mbit total memory organized as 8M × 16 with four banks; suitable for designs requiring this density and organization.
• Performance 166 MHz clock frequency (DDR333), with CAS latency options of 2, 2.5 and 3; access time and write cycle time specified at 15 ns.
• Data Transfer & Burst Modes Bi‑directional DQS with data I/O transitions on both edges of DQS; burst lengths of 2, 4 and 8 and burst types sequential and interleave for flexible memory access.
• Interface & Signaling Parallel memory interface with differential clock inputs (CLK/CLK̄), SSTL_2‑compatible 2.5V I/O, and data mask (DM) signals (LDM/UDM) for write masking.
• Power VDD/VDDQ operating range 2.3 V to 2.7 V (noted as VDD = 2.5 V ±0.2 V in the datasheet).
• Refresh & Reliability 7.8 µs refresh interval with Auto and Self Refresh support as specified in the datasheet.
• Package & Environmental 66‑pin TSOPII surface‑mount package (66‑TSOPII), commercial grade, JEDEC qualification, RoHS compliant, operating temperature 0 °C to 70 °C.

Typical Applications

• Commercial system memory — Board‑level DDR SDRAM for commercial products requiring JEDEC‑compliant DDR333 performance.
• Embedded DDR subsystems — Integration in surface‑mount designs that use a 66‑pin TSOPII package and parallel DDR interfaces.
• Module and board designs — Use in memory modules or custom boards that need 8M × 16 organization with selectable CAS latency and burst modes.

Unique Advantages

• DDR double‑data‑rate operation — Two data transfers per clock cycle improve effective data throughput at a 166 MHz clock rate.
• Flexible timing options — CAS latency 2/2.5/3 and multiple burst lengths support tuning for system performance and timing margins.
• SSTL_2‑compatible I/O — 2.5V I/O signaling aligns with common DDR signaling standards for straightforward integration.
• Package‑level integration — 66‑TSOPII surface‑mount package simplifies board placement for commercial designs.
• JEDEC qualification and RoHS compliance — Standard qualification and environmental compliance simplify procurement and regulatory review.
• Built‑in refresh and power features — Auto and Self Refresh with 7.8 µs interval support reliable operation in commercial deployments.

Why Choose M13S5121632A-6TG2T?

The M13S5121632A-6TG2T positions itself as a practical DDR SDRAM choice for commercial designs that require JEDEC‑compliant DDR333 (166 MHz) memory in a 66‑pin TSOPII form factor. Its 8M × 16 organization, selectable CAS latencies, and SSTL_2‑compatible I/O provide the timing flexibility and signaling compatibility needed for many board‑level memory applications.

Backed by ESMT's DDR SDRAM design details and RoHS compliance, this device is suited to designers and purchasers seeking a reliable, industry‑standard DDR memory component for commercial systems operating between 0 °C and 70 °C.

If you would like pricing, availability or to request a quote for M13S5121632A-6TG2T, please submit a quote request or contact sales to get product and procurement details.