M13S64164A-6TG2C
| Part Description |
DDR SDRAM 64Mbit 1M×16 166MHz 66-TSOPII Commercial |
|---|---|
| Quantity | 109 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 66-TSOPII | Memory Format | DRAM | Technology | DRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Mbit | Access Time | 15 ns | Grade | Commercial | ||
| Clock Frequency | 166 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | 0°C – 70°C | Write Cycle Time Word Page | 15 ns | Packaging | 66-TSOPII | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 1M x 16 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.02 |
Overview of M13S64164A-6TG2C – DDR SDRAM 64Mbit 1M×16 166MHz 66-TSOPII Commercial
The M13S64164A-6TG2C is a 64 Mbit DDR SDRAM organized as 1M × 16, providing double-data-rate synchronous DRAM operation at a 166 MHz clock frequency. This surface-mount memory device implements a 4-bank DDR architecture with bi-directional data strobe and differential clock inputs for synchronized, high-throughput data transfers.
Designed for commercial-grade applications (0 °C to 70 °C) and JEDEC qualification, the device offers standard DDR features and system-level power compatibility with a 2.3 V–2.7 V supply range, packaged in a compact 66-pin TSOPII footprint.
Key Features
- DDR Architecture Double-data-rate operation enabling two data transfers per clock cycle with bi-directional DQS and differential CLK/CLK̅ inputs.
- Memory Organization & Capacity 1M × 16 organization providing 67.11 Mbit usable memory capacity in a single device.
- Performance & Timing 166 MHz maximum clock frequency with 15 ns access time and 15 ns write cycle time (word page); supports CAS latency 2 and 3.
- Burst and Bank Features Four-bank operation with burst lengths of 2, 4, and 8 and both sequential and interleave burst types for flexible data transfer patterns.
- Signal Integrity & Timing Control On-die DLL to align DQ/DQS transitions with CLK and support for DQS edge-aligned READs and center-aligned WRITEs.
- Power & Refresh 2.5 V ±0.2 V VDD/VDDQ operating range (specified as 2.3 V–2.7 V) with auto and self-refresh options and a 15.6 μs refresh interval.
- Interface Compatibility 2.5 V I/O compatible with SSTL_2 signaling and parallel memory interface supporting standard DDR control signals (RAS, CAS, WE, CS, CKE).
- Package & Mounting 66-pin TSOPII (surface mount) package suitable for compact board-level integration in commercial systems.
- Compliance JEDEC-qualified device and RoHS-compliant manufacturing.
Typical Applications
- Embedded Memory Expansion Use where a compact 1M × 16 DDR SDRAM is required to add volatile storage on commercial PCBs operating within 0 °C–70 °C.
- Board-Level System Memory Suitable for designs requiring a parallel DDR interface with burst modes and selectable CAS latency for controlled read/write timing.
- Memory Subsystem Integration Integrate as part of a multi-chip memory solution leveraging four-bank operation and standard DDR control signals for system-level memory architecture.
Unique Advantages
- Deterministic DDR timing: DLL, DQS, and differential clock inputs provide precise alignment of data and strobe for reliable double-data-rate transfers.
- Flexible burst and latency options: Multiple burst lengths (2/4/8) and CAS latency choices (2, 3) enable tuning for bandwidth versus latency trade-offs.
- Standard power envelope: 2.3 V–2.7 V supply compatibility (VDD/VDDQ specified at 2.5 V ±0.2 V) matches common SSTL_2 I/O requirements for straightforward system integration.
- Compact surface-mount footprint: 66-pin TSOPII package allows dense board placement while maintaining accessibility to all DDR signals.
- JEDEC and RoHS compliance: Industry-standard qualification and environmental compliance simplify procurement and design validation for commercial products.
- Low-maintenance refresh options: Auto and self-refresh support with a 15.6 μs refresh interval help manage power and data retention in active systems.
Why Choose M13S64164A-6TG2C?
The M13S64164A-6TG2C combines standard DDR SDRAM architecture with precise timing controls and selectable burst/latency modes, offering a predictable memory solution for commercial designs. Its 1M × 16 organization, JEDEC qualification, and SSTL_2-compatible I/O simplify integration into parallel memory subsystems that require synchronized, double-data-rate transfers.
This device is well suited to engineers and procurement teams seeking a compact, surface-mount DDR memory component for commercial-temperature applications where JEDEC compliance, RoHS status, and proven DDR features (DLL, DQS, differential clocking) are important for reliable system operation and long-term availability.
Request a quote or submit a parts inquiry to receive pricing, availability, and lead-time information for the M13S64164A-6TG2C.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A