M13S64164A-6TG2C

64Mb DDR SDRAM
Part Description

DDR SDRAM 64Mbit 1M×16 166MHz 66-TSOPII Commercial

Quantity 109 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package66-TSOPIIMemory FormatDRAMTechnologyDRAM
Memory Size64 MbitAccess Time15 nsGradeCommercial
Clock Frequency166 MHzVoltage2.3V ~ 2.7VMemory TypeVolatile
Operating Temperature0°C – 70°CWrite Cycle Time Word Page15 nsPackaging66-TSOPII
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization1M x 16
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.02

Overview of M13S64164A-6TG2C – DDR SDRAM 64Mbit 1M×16 166MHz 66-TSOPII Commercial

The M13S64164A-6TG2C is a 64 Mbit DDR SDRAM organized as 1M × 16, providing double-data-rate synchronous DRAM operation at a 166 MHz clock frequency. This surface-mount memory device implements a 4-bank DDR architecture with bi-directional data strobe and differential clock inputs for synchronized, high-throughput data transfers.

Designed for commercial-grade applications (0 °C to 70 °C) and JEDEC qualification, the device offers standard DDR features and system-level power compatibility with a 2.3 V–2.7 V supply range, packaged in a compact 66-pin TSOPII footprint.

Key Features

  • DDR Architecture Double-data-rate operation enabling two data transfers per clock cycle with bi-directional DQS and differential CLK/CLK̅ inputs.
  • Memory Organization & Capacity 1M × 16 organization providing 67.11 Mbit usable memory capacity in a single device.
  • Performance & Timing 166 MHz maximum clock frequency with 15 ns access time and 15 ns write cycle time (word page); supports CAS latency 2 and 3.
  • Burst and Bank Features Four-bank operation with burst lengths of 2, 4, and 8 and both sequential and interleave burst types for flexible data transfer patterns.
  • Signal Integrity & Timing Control On-die DLL to align DQ/DQS transitions with CLK and support for DQS edge-aligned READs and center-aligned WRITEs.
  • Power & Refresh 2.5 V ±0.2 V VDD/VDDQ operating range (specified as 2.3 V–2.7 V) with auto and self-refresh options and a 15.6 μs refresh interval.
  • Interface Compatibility 2.5 V I/O compatible with SSTL_2 signaling and parallel memory interface supporting standard DDR control signals (RAS, CAS, WE, CS, CKE).
  • Package & Mounting 66-pin TSOPII (surface mount) package suitable for compact board-level integration in commercial systems.
  • Compliance JEDEC-qualified device and RoHS-compliant manufacturing.

Typical Applications

  • Embedded Memory Expansion Use where a compact 1M × 16 DDR SDRAM is required to add volatile storage on commercial PCBs operating within 0 °C–70 °C.
  • Board-Level System Memory Suitable for designs requiring a parallel DDR interface with burst modes and selectable CAS latency for controlled read/write timing.
  • Memory Subsystem Integration Integrate as part of a multi-chip memory solution leveraging four-bank operation and standard DDR control signals for system-level memory architecture.

Unique Advantages

  • Deterministic DDR timing: DLL, DQS, and differential clock inputs provide precise alignment of data and strobe for reliable double-data-rate transfers.
  • Flexible burst and latency options: Multiple burst lengths (2/4/8) and CAS latency choices (2, 3) enable tuning for bandwidth versus latency trade-offs.
  • Standard power envelope: 2.3 V–2.7 V supply compatibility (VDD/VDDQ specified at 2.5 V ±0.2 V) matches common SSTL_2 I/O requirements for straightforward system integration.
  • Compact surface-mount footprint: 66-pin TSOPII package allows dense board placement while maintaining accessibility to all DDR signals.
  • JEDEC and RoHS compliance: Industry-standard qualification and environmental compliance simplify procurement and design validation for commercial products.
  • Low-maintenance refresh options: Auto and self-refresh support with a 15.6 μs refresh interval help manage power and data retention in active systems.

Why Choose M13S64164A-6TG2C?

The M13S64164A-6TG2C combines standard DDR SDRAM architecture with precise timing controls and selectable burst/latency modes, offering a predictable memory solution for commercial designs. Its 1M × 16 organization, JEDEC qualification, and SSTL_2-compatible I/O simplify integration into parallel memory subsystems that require synchronized, double-data-rate transfers.

This device is well suited to engineers and procurement teams seeking a compact, surface-mount DDR memory component for commercial-temperature applications where JEDEC compliance, RoHS status, and proven DDR features (DLL, DQS, differential clocking) are important for reliable system operation and long-term availability.

Request a quote or submit a parts inquiry to receive pricing, availability, and lead-time information for the M13S64164A-6TG2C.

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