M14D128168A-1.8BG2Y

The M14D128168A-1.8BG2Y is a DDR II SDRAM memory device from ESMT with an 8M × 16 organization (128 Mbit density) and a 533 MHz clock frequency. It implements a pipelined double-data-rate architecture with on‑chip DLL and differential clock and data strobe support, delivering DDR2-1066 class operation at a VDD of 1.8 V.

This device is designed for use as system memory where JEDEC‑compatible DDR2 SDRAM is required. Key engineering attributes include selectable CAS latency options, on‑die termination and impedance adjustment, and a compact 84‑ball FBGA package (8 mm × 12.5 mm).

Key Features

• Core Architecture Internal pipelined double‑data‑rate (DDR II) architecture with on‑chip DLL, supporting two data accesses per clock cycle.
• Memory Organization & Capacity 8M × 16 organization (128 Mbit) with 1 KB page size, row addresses A0–A11 and column addresses A0–A8; quad bank operation (4 banks).
• Performance 533 MHz clock frequency (device listed as DDR2‑1066 operation with timing example 7‑7‑7); supports CAS latency settings 3–7 and burst lengths 4 or 8.
• Data I/O & Timing Bi‑directional differential data strobe (DQS/ /DQS) with edge‑aligned READ and center‑aligned WRITE; all inputs (except data & DM) sampled on CLK rising edge. Additive latency options supported.
• Interface & Signaling Differential clock inputs (CLK/ /CLK) and SSTL_18 interface signaling. On‑Die Termination (ODT) and Off‑Chip‑Driver (OCD) impedance adjustment for improved signal quality (ODT options: 50/75/150 Ω).
• Power VDD / VDDQ = 1.8 V ±0.1 V (supply range 1.7 V – 1.9 V), supporting standard DDR2 low‑voltage operation.
• Reliability & Refresh JEDEC qualification; auto and self refresh supported. Refresh rates: 4096 cycles/64 ms (15.6 μs interval) from 0 °C to 85 °C, and 4096 cycles/32 ms (7.8 μs interval) from >85 °C to 95 °C.
• Package & Mounting 84‑ball FBGA package (8 mm × 12.5 mm × 1.2 mm body, 0.8 mm ball pitch), surface‑mountable for compact board designs.
• Operating Range & Compliance Commercial grade, operating temperature 0 °C to 95 °C, RoHS compliant and JEDEC standard compatible.

Typical Applications

• System Memory for Embedded Designs Use as DDR2 system memory in embedded platforms that require JEDEC‑compliant DDR II devices with selectable CAS latencies.
• Consumer and Networking Equipment Suitable for products that integrate compact FBGA memory and require 1.8 V DDR2‑1066 class performance at 533 MHz.
• Compact Board‑Level Memory Modules Ideal for small‑footprint board implementations where an 84‑ball FBGA package and standard DDR2 signaling simplify assembly and routing.

Unique Advantages

• JEDEC‑Compliant DDR2 Architecture: Provides predictable timing and interoperability through standard DDR II features such as CAS latency options, burst lengths, and JEDEC refresh behavior.
• Low‑Voltage Operation: 1.8 V nominal supply (1.7–1.9 V range) enables compatibility with standard DDR2 power domains while controlling power consumption.
• Signal Integrity Controls: On‑Die Termination and OCD impedance adjustment along with differential DQS/DQS and CLK inputs improve signal quality for high‑speed DDR2 operation.
• Flexible Timing Options: Support for CAS latency 3–7 and additive latency settings lets designers tune performance vs. timing for target system requirements.
• Compact Package: 84‑ball FBGA (8 × 12.5 mm) provides a small board footprint for space‑constrained designs while maintaining standard ball‑out for assembly.
• Wide Operating Temperature Range: Rated for 0 °C to 95 °C with defined refresh intervals for higher temperature operation, supporting robust behavior in commercial environments.

Why Choose M14D128168A-1.8BG2Y?

The M14D128168A-1.8BG2Y balances JEDEC‑standard DDR II feature set, flexible timing options and signal‑integrity controls in a compact 84‑ball FBGA package. Its 8M × 16 organization and DDR2‑1066 class capability at a 533 MHz clock make it suitable for designs that require standardized DDR2 memory behavior with configurable latency and burst options.

Engineers specifying this part benefit from ESMT’s implemented DDR II features—on‑chip DLL, differential DQS/CLK, ODT and OCD controls—together with RoHS compliance and commercial temperature qualification, supporting reliable integration into a variety of board‑level systems.

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