M14D128168A-2(2Y)

The M14D128168A-2(2Y) is a DDR2 SDRAM device in an 8M × 16 organization, providing 134.2 Mbit of volatile DRAM storage. It implements a pipelined double-data-rate architecture with differential clock and data-strobe interfaces for synchronized, high-speed memory transfers.

Designed for systems that require parallel DDR2 memory with JEDEC qualification and a compact 84-ball FBGA package, this device targets applications needing predictable timing, on-die termination and flexible latency settings for system memory subsystems.

Key Features

• Core & Memory Architecture 2M × 16 organization (quad bank operation) with 1KB page size and 134.2 Mbit total capacity.
• DDR2 Double-Data-Rate Operation Internal pipelined DDR architecture performs two data accesses per clock cycle; data I/O toggles on both edges of DQS.
• Clocking and Timing Differential clock inputs (CLK/CLK) with on-chip DLL and duty-cycle corrector (DCC) to align data (DQS) with CLK; supported CAS latencies include 3, 4, 5, 6, 7 and additive latency options 0–6.
• Performance Parameters Specified clock frequency: 400 MHz and typical access times such as 15 ns; write cycle time (word/page) 15 ns.
• Signal Integrity & I/O Bi-directional differential data strobe pairs (DQS/ DQS) with option for single-ended DQS operation, on-die termination (ODT), and off-chip-driver (OCD) impedance adjustment for improved signal quality.
• Power Operates with VDD = 1.8V ±0.1V and VDDQ = 1.8V ±0.1V (per device datasheet), optimized for DDR2 system voltages.
• Refresh and Reliability Auto and self-refresh supported; refresh cycles per datasheet: 4096/64ms (0°C–85°C) and 4096/32ms (85°C–95°C) with high-temperature self-refresh rate enable.
• Package & Mounting 84-ball FBGA (0.8 mm pitch) surface-mount package with JEDEC qualification and RoHS compliance.
• Operating Range Commercial operating temperature range specified from 0°C to 95°C.

Typical Applications

• Embedded memory subsystems — Use as parallel DDR2 memory where 134.2 Mbit density and 8M × 16 organization meet system buffering and working memory needs.
• High-speed data buffering — Suitable for designs that require DDR2 transfers with differential clocking and on-die termination to manage signal integrity at up to 400 MHz clock rates.
• Compact, board-level memory — The 84-ball FBGA surface-mount package supports small form-factor applications that require JEDEC-qualified DDR2 components.

Unique Advantages

• JEDEC-qualified DDR2 device — Provides standardized DDR2 behavior and timing options (CAS latencies and additive latency settings) for predictable integration.
• Flexible timing configuration — Multiple CAS latency and additive latency options let designers trade off latency and throughput to match system requirements.
• Signal-integrity features — Differential DQS/CLK, ODT and OCD impedance adjustment reduce board-level tuning effort for higher-speed interfaces.
• Temperature-aware refresh — Datasheet-specified refresh intervals for 0°C–95°C operation help maintain data integrity across the commercial temperature range.
• Compact FBGA packaging — 84-ball FBGA enables high-density board layouts while retaining surface-mount assembly compatibility.
• RoHS compliant — Meets environmental compliance requirements for lead-free assemblies.

Why Choose M14D128168A-2(2Y)?

The M14D128168A-2(2Y) positions itself as a JEDEC-compliant DDR2 memory device that balances density, configurable timing and signal-integrity features in a compact 84-ball FBGA package. With differential clocking, on-die termination and programmable latency options, it is suited to system designs that require deterministic DDR2 behavior and board-level signal tuning.

This part is appropriate for customers building DDR2 memory subsystems that demand 134.2 Mbit density, up to 400 MHz clocking, and commercial-temperature operation. Its RoHS status and standard package form factor support integration into production assemblies with established manufacturing flows.

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