M14D128168A-1.6BG2Y

The M14D128168A-1.6BG2Y from ESMT is a DDR2 SDRAM device organized as 8M × 16 with a clock rating of 600 MHz and a supply range of 1.7 V to 1.9 V. It implements a pipelined double-data-rate architecture with on-chip DLL and differential clock inputs for synchronized, high-rate data transfers.

Designed for systems that require JEDEC-standard DDR2 volatile memory in a surface-mount 84-ball FBGA form factor (8 mm × 12.5 mm), this part provides selectable CAS and additive latency options, on-die termination and write masking for flexible timing and signal integrity control.

Key Features

• Memory Organization — 8M × 16 organization providing 134.2 Mbit usable memory capacity as specified; 1KB page size with quad-bank operation.
• Performance & Timing — 600 MHz clock frequency rating with documented access and write cycle times of 15 ns; supported CAS latencies include 3–7 and multiple additive latency settings.
• DDR2 Architecture — Internal pipelined double-data-rate operation with bi-directional differential data strobe (DQS / /DQS) and data transitions on both edges of DQS for read/write timing.
• Clock & DLL — Differential clock inputs (CLK / /CLK) and on-chip DLL to align DQ and DQS transitions with CLK for consistent timing.
• Signal Integrity & Drive — On-Die-Termination (ODT) with selectable 50/75/150 Ω options and Off-Chip-Driver (OCD) impedance adjustment to aid high-speed signal integrity.
• Interface & Masking — Parallel DDR2 interface with SSTL_18 signaling and data mask (DM) inputs (LDM/UDM) for write masking on DQ0–DQ7 and DQ8–DQ15.
• Refresh & Power Management — Auto and self-refresh support with JEDEC-specified refresh cycles (4096 cycles/64 ms at 0 °C–85 °C; 4096 cycles/32 ms at >85 °C–95 °C); VDD/VDDQ = 1.8 V ± 0.1 V.
• Package & Mounting — Surface-mount 84-ball FBGA package (8 mm × 12.5 mm, 0.8 mm ball pitch); this speed grade is offered as die-only per ordering information.
• Compliance & Temperature — JEDEC-qualified DDR2 device; RoHS compliant; specified operating temperature range 0 °C to 95 °C.

Typical Applications

• DDR2 memory subsystems — Use as a JEDEC-standard DDR2 DRAM element on memory modules or populated system boards requiring 8M × 16 device organization.
• Embedded system designs — Integrated in surface-mount assemblies where compact FBGA package and 1.8 V operation are required.
• High-rate data buffering — Suitable for applications leveraging DDR2 double-data-rate transfers with selectable CAS/additive latency and on-die termination for signal integrity.

Unique Advantages

• JEDEC-standard DDR2 compatibility — Ensures predictable interface behavior and timing options aligned with DDR2 system designs.
• Flexible latency and burst control — Multiple CAS and additive latency settings plus burst length/type options allow tuning for performance or timing margin requirements.
• Built-in signal integrity features — On-die termination and OCD impedance adjustment support improved signal quality at high data rates.
• Low-voltage 1.8 V operation — Narrow supply range (1.7 V–1.9 V) consistent with SSTL_18 signaling to minimize power domain complexity in DDR2 designs.
• Compact FBGA package — 84-ball FBGA footprint enables high-density surface-mount integration on compact boards.
• Specified operating range and refresh behavior — Defined refresh intervals and 0 °C–95 °C operating range for predictable thermal and data-retention planning.

Why Choose M14D128168A-1.6BG2Y?

The M14D128168A-1.6BG2Y positions itself as a JEDEC-compatible DDR2 SDRAM building block offering 8M × 16 organization, a 600 MHz clock rating, and a focused set of timing and signal-integrity features such as on-chip DLL, ODT, and OCD adjustment. It is supplied in an industry-standard 84-ball FBGA footprint and is RoHS compliant, making it suitable for integration into compact memory subsystems and surface-mount boards.

Manufactured by ESMT, this device is intended for designers who need a documented DDR2 die-level speed grade and predictable electrical and timing behavior in systems that operate within the specified 1.7 V–1.9 V supply window and 0 °C–95 °C temperature range.

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