M14D128168A-1.5BG2Y
| Part Description |
DDR2 SDRAM 128Mbit 667MHz 1.8V 84-FBGA |
|---|---|
| Quantity | 1,482 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 84-FBGA (8x12.5) | Memory Format | DRAM | Technology | DRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 15 ns | Grade | Commercial | ||
| Clock Frequency | 667 MHz | Voltage | 1.7V ~ 1.9V | Memory Type | Volatile | ||
| Operating Temperature | 0°C – 95°C | Write Cycle Time Word Page | 15 ns | Packaging | 84-FBGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 8M x 16 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.02 |
Overview of M14D128168A-1.5BG2Y – DDR2 SDRAM 128Mbit 667MHz 1.8V 84-FBGA
The M14D128168A-1.5BG2Y is a DDR2 SDRAM device organized as 8M × 16 (128Mbit nominal, 134.2 Mbit reported) designed for board-level memory implementations. It implements an internal pipelined double-data-rate architecture with on-chip DLL and differential clock inputs to support high-speed, synchronous parallel memory interfaces.
Targeted for commercial-grade applications, this 1.8V DDR2 device delivers DDR2-1333 performance at a 667 MHz clock rate while providing on-die termination, on-chip drive adjustments and flexible timing options for system-level signal integrity and integration.
Key Features
- Memory Organization & Capacity 8M × 16 organization providing a 128Mbit (134.2 Mbit reported) DDR2 SDRAM footprint across four internal banks and a 1KB page size.
- High-Speed DDR2 Operation Rated for 667 MHz operation (DDR2-1333 data rate) with selectable CAS latencies and additive latencies to match system timing requirements.
- Voltage & Power Operates at VDD = 1.8V ±0.1V (specified supply range 1.7V–1.9V) with separate VDDQ for data I/O.
- Clocking & Timing Differential clock inputs (CLK/CLK¯) with on-chip DLL and DCC (Duty Cycle Corrector) to align DQ/DQS transitions for reliable double-data-rate transfers.
- Data Strobe & I/O Bi-directional differential DQS (and optional single-ended DQS) with edge-aligned READ and center-aligned WRITE timing; supports data mask (DM) for write masking.
- Signal Integrity On-Die Termination (ODT) with selectable 50/75/150 Ω options and Off-Chip-Driver (OCD) impedance adjustment to improve signal margins on high-speed buses.
- Refresh & Self-Refresh Standard DDR2 auto and self-refresh support with JEDEC-defined refresh rates (4096 cycles per 64 ms at 0 °C–+85 °C; accelerated refresh above +85 °C).
- Package & Mounting Pb-free 84-ball FBGA (8 mm × 12.5 mm, 1.2 mm body height, 0.8 mm ball pitch) for surface-mount integration on compact PCBs.
- Operating Range & Qualification Commercial-grade operating temperature 0 °C to +95 °C and JEDEC qualification.
Typical Applications
- Embedded Systems — Board-level DDR2 memory for embedded controllers and modules that require synchronous high-speed DRAM with flexible timing.
- Consumer Electronics — Memory sub-systems in set-top boxes, media players or home gateways where 1.8V DDR2 operation and compact FBGA packaging are required.
- Networking & Communications — Packet buffers and working memory for routers, switches and network interface boards needing DDR2-1333 performance.
- Industrial Controllers — Commercial-temperature-range control and instrumentation platforms that need JEDEC-compliant DDR2 memory with robust refresh and ODT features.
Unique Advantages
- Flexible Timing Options: Multiple CAS and additive latency settings allow designers to tune performance and timing margins for diverse system architectures.
- Improved Signal Integrity: On-Die Termination and OCD impedance adjustment reduce board-level tuning effort and help maintain reliable high-speed data transfers.
- Compact, Pb-free FBGA Package: 84-ball FBGA with 8×12.5 mm footprint enables dense PCB layouts while meeting lead-free assembly requirements.
- Standard DDR2 Interface: SSTL_18-compatible interface and differential clocking simplify integration with standard DDR2 memory controllers.
- Thermal and Refresh Robustness: JEDEC refresh modes and accelerated refresh above +85 °C support reliable retention across the specified commercial temperature range.
Why Choose M14D128168A-1.5BG2Y?
The M14D128168A-1.5BG2Y combines JEDEC-standard DDR2 functionality, on-chip DLL and ODT features with an 84-ball FBGA package to provide a compact, configurable memory solution for commercial embedded and consumer designs. Its 1.8V supply, 667 MHz clock rating and selectable timing parameters make it suitable for systems that require DDR2-1333 throughput and board-level signal integrity features.
This device is appropriate for designers seeking a verified DDR2 component with flexible timing, integrated signal conditioning and a compact BGA package to simplify layout and BOM decisions while maintaining JEDEC compliance and commercial temperature operation.
Request a quote or submit a sales inquiry to obtain pricing, lead times and ordering information for M14D128168A-1.5BG2Y.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
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