M13S64164A-5TG2C

The M13S64164A-5TG2C is a commercial-grade DDR SDRAM organized as 1M × 16, providing 67.11 Mbit of volatile memory in a 66‑pin TSOPII surface-mount package. It implements a double-data-rate architecture with four internal banks, delivering two data transfers per clock and supporting DDR400 operation at a 200 MHz clock.

Designed for systems requiring a JEDEC-qualified parallel DDR interface, this device offers standard DDR timing and signaling features including bi-directional DQS, differential clock inputs, and on-die DLL alignment for timing-critical read/write transfers.

Key Features

• Core & Memory Organization 1M × 16 organization (67.11 Mbit) with four-bank operation for efficient page and bank management.
• Double-Data-Rate Architecture Two data transfers per clock cycle (DDR), supporting DDR400 operation at a 200 MHz clock frequency.
• Data Strobe and Clocking Bi-directional data strobe (LDQS/UDQS) with differential clock inputs (CLK/CLK¯) and on-die DLL to align DQ/DQS with CLK transitions.
• Timing Options CAS latency options of 2 and 3; burst lengths of 2, 4 and 8; all inputs (except data & DM) sampled on rising CLK edge.
• Performance Specs 15 ns access time and 15 ns write cycle time (word/page), providing defined timing characteristics for system designers.
• Power & I/O Levels Supply range 2.3 V–2.7 V (VDD/VDDQ specified as 2.5 V ±0.2 V); 2.5 V SSTL_2 compatible I/O signaling.
• Refresh & Power Management 15.6 µs refresh interval with Auto and Self Refresh support to maintain data integrity.
• Package & Reliability 66‑pin TSOPII surface-mount package; JEDEC qualification and RoHS compliance; commercial operating temperature 0 °C to 70 °C.

Typical Applications

• Commercial Embedded Systems — System memory for commercial embedded designs that require 1M × 16 DDR SDRAM at 200 MHz operation.
• Buffer and Frame Storage — Parallel DDR buffers where burst transfers and selectable CAS latencies (2, 3) are useful for read/write bursts.
• Legacy/Package-Specific Designs — Replacements or designs that specify a 66‑pin TSOPII DDR device with JEDEC-qualified signaling.
• General-Purpose Memory Modules — Integration into modules or boards requiring SSTL_2-compatible 2.5 V I/O and standard DDR refresh modes.

Unique Advantages

• Standard DDR Interface: Implements common DDR signaling (DQS, differential CLK, SSTL_2) to fit with established memory controllers and designs.
• Flexible Performance Modes: CAS latency options (2, 3) and burst lengths (2/4/8) enable tuning for latency versus throughput trade-offs.
• Deterministic Timing: On-die DLL alignment and defined access/write-cycle times (15 ns) help simplify timing closure for board-level designs.
• Controlled Voltage Range: 2.3 V–2.7 V supply range with VDD/VDDQ = 2.5 V ±0.2 V supports systems designed for 2.5 V DDR operation.
• Compact Surface-Mount Package: 66‑pin TSOPII package enables high-density PCB placement while maintaining full DDR pinout.
• Standards & Compliance: JEDEC qualification and RoHS compliance provide supply-chain and environmental traceability for commercial products.

Why Choose M13S64164A-5TG2C?

The M13S64164A-5TG2C positions itself as a practical DDR SDRAM choice for commercial designs that require 1M × 16 density, DDR400 (200 MHz) operation, and JEDEC-compatible DDR features such as bi-directional DQS, DLL timing alignment, and selectable CAS latencies. Its defined timing (15 ns access/write) and standard 2.5 V I/O levels make it suitable for systems that require predictable DDR behavior and conventional signaling.

Engineers aiming to integrate JEDEC-qualified DDR memory in compact, surface-mount formats will find the 66‑pin TSOPII package and the device’s refresh/power features align with module and board-level requirements, while RoHS compliance supports environmental regulations for commercial products.

Request a quote or submit an inquiry today to check pricing and availability for M13S64164A-5TG2C and to obtain ordering information for your next commercial DDR memory design.