M13S5121632A-6TIG2T

The M13S5121632A-6TIG2T is a 512 Mbit DDR SDRAM organized as 8M × 16 with a 4-bank architecture and double-data-rate operation at 166 MHz (DDR333). Designed and manufactured by ESMT, this industrial-grade, surface-mount memory device provides JEDEC-qualified DDR functionality for systems that require 2.5 V class I/O and extended temperature operation.

Its combination of DDR features (DQS, differential clocks, DLL), selectable CAS latencies, and burst modes make it suitable for embedded and industrial applications that need deterministic memory timing, standard 2.5 V supply compatibility, and extended operating temperature range.

Key Features

• DDR architecture — Double-data-rate operation with bidirectional data strobe (DQS) and differential clock inputs for two data transfers per clock cycle.
• Memory organization — 536.9 Mbit capacity organized as 8M × 16 with four-bank operation for efficient access patterns.
• Performance timing — 166 MHz clock frequency (DDR333), access time ~15 ns and write cycle time (word/page) ~15 ns; CAS latency options 2, 2.5, 3 and burst length selectable as 2, 4, 8.
• Power and I/O — VDD and VDDQ specified at 2.5 V ±0.2 V (operating supply range 2.3 V–2.7 V); SSTL_2-compatible 2.5 V I/O signaling.
• Data integrity and timing alignment — DLL aligns DQ and DQS transitions with CLK; DQS edge-aligned for READ and center-aligned for WRITE; data mask (DM) for write masking.
• Refresh and reliability — 7.8 μs refresh interval with Auto and Self refresh support to maintain data integrity over extended operation.
• Industrial-grade package and mounting — 66-pin TSOPII surface-mount package (66L, 400 mil body, 0.65 mm pin pitch) rated for operation from −40 °C to 85 °C.
• Standards and compliance — JEDEC-qualified design and RoHS compliant.

Typical Applications

• Industrial control and automation — Use as system memory where JEDEC-qualified DDR operation and an extended −40 °C to 85 °C temperature range are required.
• Embedded systems — Provides 512 Mbit DDR333 (166 MHz) memory for embedded platforms using 2.5 V SSTL_2 I/O signaling in a compact surface-mount 66-TSOPII package.
• Legacy 2.5 V DDR designs — Drop-in memory option for designs specified around 2.5 V VDD/VDDQ with selectable CAS latencies and burst modes to match system timing.

Unique Advantages

• Industrial temperature rating — Rated for −40 °C to 85 °C operation, enabling deployment in temperature-challenging environments.
• SSTL_2 2.5 V compatibility — VDD and VDDQ at 2.5 V ±0.2 V (operating 2.3 V–2.7 V) ensures compatibility with standard 2.5 V DDR signalling domains.
• Flexible performance tuning — Multiple CAS latency options (2, 2.5, 3) and burst lengths (2, 4, 8) allow designers to optimize latency and throughput for target workloads.
• Compact surface-mount package — 66-pin TSOPII (400 mil body, 0.65 mm pitch) balances board-area efficiency with manufacturability for surface-mount assembly.
• Built-in timing and data alignment — DLL, DQS alignment behaviors, and differential clocks support consistent data timing across reads and writes.
• JEDEC qualification and RoHS compliance — Adherence to industry standards simplifies qualification and regulatory considerations.

Why Choose M13S5121632A-6TIG2T?

The M13S5121632A-6TIG2T positions itself as a reliable DDR333 (166 MHz) memory option for industrial and embedded designs that require JEDEC-qualified DDR functionality, 2.5 V I/O compatibility, and extended temperature operation. Its 8M × 16 organization, selectable latencies, and burst modes give designers the control needed to match system timing and throughput requirements.

Backed by ESMT manufacturing and supplied in a compact 66-TSOPII surface-mount package, this device is suited to applications that prioritize deterministic timing, board-level density, and robustness over a wide operating temperature range.

Request a quote or submit an inquiry to obtain pricing, availability, and support for integrating the M13S5121632A-6TIG2T into your next design.