M13S5121632A-5TG2T

The M13S5121632A-5TG2T is a 512 Mbit DDR SDRAM device organized as 8M × 16 with 4 internal banks and a 66-pin TSOPII surface-mount package. It implements a double-data-rate architecture that performs two data transfers per clock cycle and is specified for 200 MHz system clock operation.

Designed for commercial-grade systems, this JEDEC-qualified, RoHS-compliant memory component provides standard DDR features—programmable CAS latencies, burst lengths and on-chip DLL/DQS timing—to support synchronous parallel memory interfaces in board-level applications.

Key Features

• Memory Organization 536.9 Mbit capacity arranged as 8M × 16 with four-bank operation for standard DDR memory addressing and bank selection.
• DDR Performance Double-data-rate architecture with two data transfers per clock cycle and a 200 MHz clock frequency (DDR timing), supporting CAS latencies 2, 2.5 and 3 and burst lengths of 2, 4 and 8.
• Signal Timing and Integrity Bi-directional data strobe (LDQS/UDQS), differential clock inputs (CLK/CLK\overline{} ) and an on-chip DLL to align DQ/DQS transitions with clock edges for read and write operations.
• Interface Parallel memory interface with DQ0–DQ15 data lines, separate data masks (LDM/UDM) and SSTL_2-compatible 2.5 V I/O signaling as specified in the datasheet.
• Power Core and I/O supply specified at VDD/VDDQ = 2.5 V ±0.2 V (usable range 2.3 V to 2.7 V), enabling implementation in standard 2.5 V DDR designs.
• Package & Mounting 66-pin TSOPII (surface mount) package suitable for board-level assembly and integration into compact module layouts.
• Environmental & Reliability JEDEC qualification and RoHS compliance; commercial operating temperature range 0 °C to 70 °C and specified auto and self-refresh support with a 7.8 µs refresh interval.

Typical Applications

• Commercial Embedded Systems Acts as board-level synchronous DDR memory for commercial embedded designs requiring a JEDEC-qualified DDR SDRAM in a 66-TSOPII footprint.
• System Memory on PCBs Provides parallel interface memory for systems that use discrete DDR SDRAM devices with 8M×16 organization and 200 MHz clocking.
• Equipment Requiring Standard DDR Features Supports designs needing programmable CAS latency, burst operation and DLL-aligned DQ/DQS timing for predictable read/write behavior.

Unique Advantages

• DDR Double-Data-Rate Operation Two data transfers per clock cycle increase effective data throughput without increasing clock frequency.
• Flexible Timing Options Multiple CAS latency and burst length settings allow tuning for system timing and bandwidth trade-offs.
• SSTL_2-Compatible I/O 2.5 V I/O signaling and VREF support simplify integration with SSTL_2 host interfaces.
• Compact Surface-Mount Package 66-TSOPII packaging enables dense board layouts and compatibility with standard assembly processes.
• JEDEC Qualification and RoHS Compliance Provides industry-standard qualification and environmental compliance for commercial product development.
• On-Chip Timing Support DLL and bi-directional DQS improve timing alignment for reliable read and write data transfers.

Why Choose M13S5121632A-5TG2T?

The M13S5121632A-5TG2T delivers a balanced combination of DDR performance and standard, verifiable specifications—536.9 Mbit density, 8M×16 organization, 200 MHz clock operation and configurable CAS/burst modes—making it well suited for commercial board-level memory implementations that require JEDEC-qualified DDR SDRAM. Its 66-pin TSOPII package and surface-mount mounting support compact PCB layouts and conventional manufacturing workflows.

This device is appropriate for designers and procurement teams who need a RoHS-compliant, JEDEC-aligned DDR memory component with defined voltage and temperature ranges (VDD/VDDQ = 2.5 V ±0.2 V, 0 °C to 70 °C) and the timing features required for standard parallel DDR interfaces.

Request a quote or submit a purchase inquiry today to check availability and receive pricing and lead-time information for the M13S5121632A-5TG2T.