M13S2561616A-6TIG2T

The M13S2561616A-6TIG2T is an industrial-grade DDR SDRAM device offered in a 66‑pin TSOPII surface-mount package. It implements a double-data-rate architecture with four internal banks and a 4M × 16 memory organization to serve system memory requirements for industrial electronics.

Designed for industrial temperature operation, this part provides a 166 MHz clock rating (DDR333 timing) and supports standard DDR features such as differential clock inputs, bi-directional data strobe (DQS) and on-die DLL timing alignment, delivering predictable timing behavior for board-level memory subsystems.

Key Features

• Memory & Organization – 268.4 Mbit capacity organized as 4M × 16 with four-bank architecture, providing a compact, parallel DDR memory element for system designs.
• DDR Double-Data-Rate Architecture – Two data transfers per clock cycle with burst lengths of 2, 4 or 8 and burst types sequential and interleave to match common DDR access patterns.
• Clocking & Strobe – Differential clock inputs (CLK/CLK) and bi-directional DQS (LDQS/UDQS) with DLL alignment; DQS is edge-aligned for READ and center-aligned for WRITE operations.
• Timing Options – CAS latency options of 2, 2.5 and 3 and specified access/write cycle times of 15 ns to support system timing requirements at the rated frequency.
• Voltage & I/O – Device core and DQ supply VDD/VDDQ specified at 2.5 V ±0.2 V (2.3–2.7 V supply range) with SSTL_2 compatible 2.5 V I/O signaling.
• Refresh & Power Management – 7.8 µs refresh interval with Auto and Self refresh support for retention and power management in multi-mode operation.
• Package & Mounting – 66‑pin TSOPII package (surface mount) optimized for board-level assembly and space-constrained layouts.
• Industrial Temperature Range – Rated for operation from −40 °C to 85 °C, suitable for industrial environments.
• Standards & Qualification – JEDEC qualification for DDR SDRAM series compliance.

Typical Applications

• Industrial Control Systems – Provides DDR working memory for embedded controllers and PLCs that require operation across industrial temperature ranges.
• Network and Communications Equipment – Serves as parallel DDR memory in industrial networking modules and communications line cards where deterministic memory timing is needed.
• Test & Measurement Instrumentation – Enables buffering and data capture for instruments operating in factory or lab environments with extended temperature needs.

Unique Advantages

• Industrial Temperature Rating – Operation from −40 °C to 85 °C enables deployment in harsh or temperature-variable environments.
• SSTL_2-Compatible I/O – 2.5 V I/O signaling with VDD/VDDQ = 2.5 V ±0.2 V simplifies interface compatibility with standard DDR signaling domains.
• Flexible DDR Timing – Support for CAS latencies 2 / 2.5 / 3, multiple burst lengths and burst types provides system designers flexibility to tune performance vs. timing constraints.
• Compact Surface-Mount Package – 66‑pin TSOPII packaging supports high-density board layouts and conventional surface-mount assembly processes.
• Refresh and Power Modes – Auto and Self refresh with a 7.8 µs refresh interval support reliable data retention and power management strategies.
• JEDEC Qualification – JEDEC qualification indicates conformance to DDR SDRAM standards in the product family.

Why Choose M13S2561616A-6TIG2T?

The M13S2561616A-6TIG2T delivers DDR-class memory capability in a compact TSOPII package tailored for industrial applications. With a robust operating temperature range, standard DDR interface features (differential clocks, DQS strobe and DLL alignment), and JEDEC qualification, it provides a predictable memory building block for embedded systems and industrial electronics.

Its 2.5 V I/O compatibility, selectable timing options, and support for auto/self refresh make it suitable for designers seeking a straightforward, standards-aligned DDR memory device that integrates into existing parallel memory subsystems while meeting industrial environmental requirements.

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