M13S2561616A-6TG2T

The M13S2561616A-6TG2T is a commercial-grade DDR SDRAM device organized as 4M × 16 with four internal banks and a total density listed as 268.4 Mbit. It implements a double-data-rate architecture that performs two data transfers per clock cycle and supports differential clock inputs and a DLL for data alignment.

Designed for commercial electronic systems, this surface-mount 66‑TSOPII packaged memory operates at a system clock up to 166 MHz (DDR333) with SSTL_2 compatible 2.5V I/O and operates over a 0 °C to 70 °C ambient range. JEDEC-qualified and RoHS-compliant, it provides standard DDR features for burst transfers, selectable CAS latencies, and refresh control.

Key Features

• Core Architecture Double-data-rate architecture with two data transfers per clock cycle, differential clock inputs (CLK/CLK̅), and an internal DLL to align DQ/DQS with CLK transitions.
• Memory Organization 4M × 16 bit organization with four internal banks and a listed device density of 268.4 Mbit.
• Performance & Timing Supports CAS latencies of 2, 2.5 and 3, burst lengths of 2/4/8, and a clock rating for this variant at 166 MHz (DDR333). Typical access and write cycle timing values are 15 ns.
• Data I/O & Control Bi-directional data strobe (LDQS/UDQS) with edge-aligned READ and center-aligned WRITE DQS timing; data mask (DM) inputs for write masking.
• Power & Voltage VDD and VDDQ nominally 2.5V (±0.2V) with supplier spec showing operating supply range 2.3V–2.7V; SSTL_2 compatible 2.5V I/O signaling.
• Refresh & Power Management Supports auto and self-refresh with a 7.8 μs refresh interval to maintain data integrity.
• Package & Temperature Surface-mount 66‑TSOPII (66-pin TSOPII) package, JEDEC-qualified, RoHS-compliant, with an operating ambient temperature range of 0 °C to 70 °C.

Typical Applications

• Commercial embedded systems — Provides DDR SDRAM memory for designs requiring standard DDR features and a 66‑TSOPII form factor.
• System memory buffering — Suitable for system designs that use parallel memory interfaces with burst read/write and DQS timing.
• Legacy or board-level upgrades — Matches designs that require a 4M × 16 DDR device in a 66‑TSOPII surface-mount package.

Unique Advantages

• Proven DDR architecture: Two data transfers per clock cycle with DLL and differential clocks for reliable timing and aligned data transfers.
• Flexible timing options: Multiple supported CAS latencies (2, 2.5, 3) and burst lengths (2/4/8) let designers trade latency and throughput based on system needs.
• SSTL_2 compatible I/O: 2.5V I/O signaling and VREF support simplify integration with SSTL_2 host interfaces.
• Commercial temperature and JEDEC qualification: Designed for commercial ambient ranges (0 °C to 70 °C) and JEDEC qualification for predictable supply-chain integration.
• Compact surface-mount package: 66‑TSOPII packaging enables high-density board designs and straightforward mounting for production assembly.
• Regulatory-friendly: RoHS compliance supports regulatory and environmental requirements for commercial electronics.

Why Choose M13S2561616A-6TG2T?

The M13S2561616A-6TG2T delivers standard DDR SDRAM functionality in a compact 66‑TSOPII surface-mount package, combining DDR-specific timing features (DLL, DQS, differential clocks) with multiple CAS latency and burst options to suit a range of commercial system designs. Its supply range and SSTL_2 compatible I/O make it appropriate for systems that rely on 2.5V DDR signaling, while JEDEC qualification and RoHS compliance simplify integration and procurement.

This device is well suited for engineers and procurement teams building commercial embedded systems, memory buffering solutions, or board-level upgrades that require a verified DDR module with predictable timing, refresh behavior, and a 0 °C to 70 °C operating range.

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