M13S64164A-4TG2C

The M13S64164A-4TG2C is a commercial-grade DDR SDRAM organized as 1M×16 for a total density of 67.11 Mbit. It implements a double-data-rate architecture to deliver two data transfers per clock cycle and is offered in a compact 66‑pin TSOPII surface-mount package.

Designed for systems that require JEDEC‑compatible DDR memory behavior at 250 MHz (DDR500), this device combines high-speed parallel interface operation, flexible burst modes and multi-bank organization to support memory subsystems in commercial electronic products operating from 0 °C to 70 °C.

Key Features

• Core Architecture Double‑data‑rate operation with DLL alignment and differential clock inputs (CLK and CLK̄) to perform two transfers per clock cycle and align data transitions with the clock.
• Memory Organization & Performance 1M × 16 organization (67.11 Mbit total); supports CAS latency 2 and 3, and burst lengths of 2, 4 and 8 for flexible throughput and access patterns.
• Banking & Burst Four bank operation with sequential and interleave burst types to optimize read/write sequencing and improve effective memory concurrency.
• Data I/O & Masking Bi‑directional data strobe signals (LDQS/UDQS) with edge/center alignment behavior and data mask inputs (LDM/UDM) for write masking control.
• Timing Access time specified at 10 ns and write cycle time (word/page) at 15 ns to support high‑speed memory transactions.
• Power & Signaling VDD / VDDQ at 2.5 V ±0.2 V (specified supply range 2.3 V–2.7 V) with SSTL_2 compatible 2.5 V I/O signaling and auto/self-refresh support with a 15.6 µs refresh interval.
• Package & Mounting 66‑pin TSOPII (surface mount) package, Pb‑free, suitable for dense PCB integration.
• Qualification & Environmental JEDEC qualification and RoHS compliant for commercial applications; operating temperature range 0 °C to 70 °C.

Typical Applications

• Commercial embedded systems — Use as main or auxiliary DDR memory in commercial devices where JEDEC DDR behavior and 0 °C to 70 °C operation are required.
• High‑speed memory subsystems — Deploy in designs that require DDR500 class operation at 250 MHz with CAS latency and burst length flexibility to match interface timing and throughput needs.
• Compact PCB designs — Surface‑mount 66‑TSOPII package supports space‑constrained boards and simplifies placement in densely populated assemblies.

Unique Advantages

• DDR performance at 250 MHz — Double‑data‑rate architecture provides two transfers per clock cycle to increase effective data throughput.
• Flexible timing and burst control — CAS latency options and multiple burst lengths allow tuning for varied access patterns and system timing constraints.
• SSTL_2 compatible I/O — 2.5 V signaling and VREF support ensure compatibility with SSTL_2 interfaces used in common DDR memory systems.
• Compact, Pb‑free TSOPII package — 66‑pin surface‑mount form factor enables high‑density board layouts while meeting environmental compliance.
• JEDEC qualification — Conforms to JEDEC DDR SDRAM specifications for predictable behavior across standard DDR use cases.
• Commercial temperature suitability — Rated for 0 °C to 70 °C to match typical commercial electronics environments.

Why Choose M13S64164A-4TG2C?

The M13S64164A-4TG2C delivers JEDEC‑compatible DDR SDRAM functionality in a compact 66‑TSOPII package, combining 1M×16 organization, multi‑bank operation and double‑data‑rate transfers at 250 MHz to address commercial memory subsystem needs. Its support for CAS latency settings, burst modes and SSTL_2 signaling makes it suitable for designs requiring predictable DDR behavior and integration into existing 2.5 V memory interfaces.

This part is targeted at designers and procurement teams building commercial products that require verified DDR timing, Pb‑free packaging, and operation across standard commercial temperature and voltage ranges, offering straightforward integration into parallel memory architectures.

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