M14D128168A-1(2Y)

The M14D128168A-1(2Y) from ESMT is a JEDEC-compatible DDR2 SDRAM device providing 134.2 Mbit organized as 8M × 16 with quad-bank operation and a 1KB page size. It implements an internal pipelined double-data-rate architecture with on-chip DLL and DCC to enable two data accesses per clock cycle and improved timing alignment.

With support for differential CLK and DQS signaling, selectable CAS and additive latencies, On-Die Termination and OCD impedance adjustment, this device is intended for system designs that require a compact, surface-mount DDR2 memory in an 84-ball FBGA package operating over a commercial temperature range.

Key Features

• Core & Architecture Internal pipelined double-data-rate architecture enabling two data accesses per clock cycle, with on-chip DLL and Duty Cycle Corrector (DCC) for timing alignment.
• Memory Organization & Capacity 134.2 Mbit capacity with an 8M × 16 organization and 1KB page size across 4 banks.
• Performance & Timing Rated to 667 MHz; access time specified at 15 ns. CAS latency options from 3 to 7 and additive latency options from 0 to 6; burst length 4 or 8 and burst types sequential or interleave.
• Interfaces & Signal Integrity Bi-directional differential data strobe (DQS/ŌDQS) with edge/center alignment for READ/WRITE, differential clock inputs (CLK/ŌCLK), SSTL_18 interface, On-Die Termination (ODT) and OCD impedance adjustment to improve signal integrity.
• Power VDD = 1.8V ±0.1V and VDDQ = 1.8V ±0.1V (DDR2 supply domain), supporting standard low-voltage DDR2 operation.
• Package & Mounting 84 Ball FBGA (surface mount) package optimized for high-density board designs.
• Reliability & Compliance JEDEC-qualified device with RoHS compliance and commercial-grade operating range of 0°C to 95°C.

Typical Applications

• Embedded memory modules – Provides 134.2 Mbit DDR2 capacity with up to 667 MHz operation for embedded boards and memory subsystems requiring an 8M × 16 organization.
• System buffers and frame stores – Quad-bank DDR2 organization and selectable burst lengths support buffer and temporary storage functions in data-path designs.
• Compact board-level implementations – 84-ball FBGA surface-mount package suits space-constrained PCBs where a low-voltage DDR2 memory is required.

Unique Advantages

• Flexible timing configuration: Multiple CAS and additive latency options plus programmable burst lengths allow tuning for system timing and throughput needs.
• Robust signal control: Differential DQS/CLK, On-Die Termination and OCD impedance adjustment enhance signal integrity on high-speed parallel buses.
• Low-voltage DDR2 operation: VDD/VDDQ at 1.8V ±0.1V supports standard DDR2 system power domains.
• Compact surface-mount package: 84 Ball FBGA enables high-density board layouts while maintaining thermal and mechanical reliability for commercial applications.
• Standards-based qualification: JEDEC compatibility and RoHS compliance provide a verifiable, standards-aligned memory option.

Why Choose M14D128168A-1(2Y)?

The M14D128168A-1(2Y) is positioned as a versatile DDR2 SDRAM device for designs that require a standards-compliant, low-voltage memory with flexible timing and strong signal integrity features. Its combination of 134.2 Mbit capacity, up to 667 MHz operation, and on-die termination/OCD options makes it suitable for compact system boards and memory subsystems that need predictable DDR2 behavior.

Manufactured by ESMT and offered in an 84-ball FBGA surface-mount package, this JEDEC-qualified, RoHS-compliant device is appropriate for commercial-temperature applications where a reliable, standards-based DDR2 memory component is required.

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