M14D1G1664A-1.6BG2P

The M14D1G1664A-1.6BG2P is a DDR2 SDRAM die providing 1.074 Gbit of volatile DRAM organized as 64M × 16. It implements an internal pipelined double‑data‑rate architecture that delivers two data accesses per clock cycle for high‑throughput memory applications.

Designed to JEDEC standards and built for SSTL_18 signaling, this 84‑FBGA (8 × 12.5 mm) die targets commercial electronics requiring compact, low‑voltage (1.8 V ±0.1 V) DDR2 memory with on‑chip timing and signal management features.

Key Features

• DDR2 architecture & data rate Internal pipelined double‑data‑rate operation delivering two data accesses per clock cycle; specified for 600 MHz clock operation.
• Memory density & organization 1.074 Gbit capacity organized as 64M × 16, supporting burst lengths of 4 and 8 for flexible transfer sizing.
• Timing & latency Supports CAS latencies of 3–7 and additive latencies 0–6; write cycle time and access time shown at 15 ns in device specifications.
• Power & interface VDD / VDDQ = 1.8 V ±0.1 V (product supply range 1.7 V–1.9 V); SSTL_18 interface with differential clock inputs (CLK/CLK̄) and differential DQS signals.
• Signal integrity & timing control On‑chip DLL to align DQ and DQS with CLK, bi‑directional DQS (with single‑ended option), On‑Die‑Termination (ODT selectable 50/75/150 Ω), and Off‑Chip‑Driver (OCD) impedance adjustment.
• Refresh & self‑management Auto and self refresh supported; standard refresh intervals — 8192 cycles/64 ms at 0 °C ≤ Tc ≤ +85 °C and 8192 cycles/32 ms at +85 °C < Tc ≤ +95 °C.
• Package & mounting 84‑ball FBGA die format (8 × 12.5 mm, 0.8 mm pitch), surface‑mount die option; speed grade noted as die only in ordering information.
• Compliance & grade JEDEC standard DDR2 device, commercial grade, and RoHS compliant.

Typical Applications

• Embedded system memory High‑density DDR2 memory for commercial embedded platforms that use SSTL_18 signaling and operate within a 0 °C to 95 °C range.
• Network and communications boards Buffer and system memory for networking equipment requiring 600 MHz DDR2 performance and on‑die termination for improved signal integrity.
• Consumer and industrial electronics Compact die solution for consumer or industrial boards needing 1.074 Gbit DDR2 memory in an 84‑FBGA footprint and low‑voltage operation.

Unique Advantages

• High usable density: 1.074 Gbit (64M × 16) provides substantial memory capacity in a single die for mid‑range system designs.
• 600 MHz clock support: Enables DDR2‑level throughput when paired with appropriate system designs and timing configurations.
• Low‑voltage SSTL_18 operation: 1.8 V ±0.1 V supply range (1.7 V–1.9 V) supports energy‑efficient board designs and common DDR2 interfaces.
• Integrated timing and signal features: On‑chip DLL, differential DQS/CLK, ODT and OCD impedance adjustment help simplify timing closure and signal integrity on populated boards.
• JEDEC standard and RoHS compliant: Industry standard DDR2 implementation with environmental compliance for commercial applications.
• Compact FBGA die format: 84‑ball FBGA (8 × 12.5 mm) offers a space‑efficient solution for board‑level integration.

Why Choose M14D1G1664A-1.6BG2P?

The M14D1G1664A-1.6BG2P delivers a balanced combination of density, performance and platform compatibility for commercial DDR2 memory subsystems. With JEDEC‑standard DDR2 architecture, on‑chip DLL and ODT options, it supports robust timing and signal integrity measures needed in mid‑range embedded, networking and consumer system designs.

As a die‑only speed grade in an 84‑FBGA format, this part is suited for designs that require compact, low‑voltage (1.8 V) DDR2 memory with defined refresh behavior across 0 °C to 95 °C operating range. The device’s documented timing modes, latencies and refresh specifications allow engineers to plan system memory performance and reliability with verifiable parameters.

Request a quote or submit an inquiry with the part number M14D1G1664A-1.6BG2P to receive pricing, availability and lead‑time information for your project requirements.