M14D1G1664A-2(2P)

The M14D1G1664A-2(2P) is a 1.074 Gbit DDR2 SDRAM device in a 64M × 16 organization designed for commercial-grade system memory. It implements internal pipelined double-data-rate architecture with on-chip DLL and differential clock inputs to support high-speed parallel data transfers at a 400 MHz clock (DDR2-800).

Targeted for commercial systems that require compact surface-mount memory, this device combines standard JEDEC DDR2 signaling, on-die termination and write masking to simplify board-level memory integration and signal integrity management.

Key Features

• Core & architecture Internal pipelined double-data-rate architecture providing two data accesses per clock cycle; on-chip DLL aligns DQ and DQS transitions with CLK.
• Memory organization & capacity 1.074 Gbit total capacity organized as 64M × 16 with 8 internal banks for efficient row/column access patterns.
• Performance Clock frequency 400 MHz (DDR2-800 data rate) with typical access time and write cycle time of 15 ns.
• Latency & burst options Support for CAS latencies 3–7, additive latencies 0–6, and burst lengths of 4 or 8 with sequential and interleave burst types.
• Data integrity & signaling Bi-directional differential data strobe (DQS/ DQS) with DQS edge alignment for READ and center alignment for WRITE; data mask (DM) for selective write masking.
• Termination & impedance control On-Die Termination (ODT) and Off-Chip-Driver (OCD) impedance adjustment options to improve signal quality across DQ, DM and DQS lines.
• Power rails VDD = 1.8V ±0.1V and VDDQ = 1.8V ±0.1V as specified for the device core and I/O supplies.
• Package & mounting 84-ball BGA surface-mount package (0.8 mm ball pitch) designed for compact board-level integration.
• Operating range & compliance Commercial operating temperature 0 °C to +95 °C and JEDEC qualification; RoHS compliant.

Typical Applications

• Commercial embedded systems — Memory module for commercial-grade embedded boards requiring DDR2-800 density and performance within 0 °C to +95 °C operational range.
• Board-level DDR2 memory — Compact 84-ball BGA package for integration on space-constrained PCBs where a 64M × 16 DDR2 device is required.
• Parallel memory designs — 1.074 Gbit capacity and 8-bank architecture suited to designs needing parallel DRAM organization and standard JEDEC DDR2 signaling.

Unique Advantages

• JEDEC-standard DDR2 interface — Ensures predictable timing and compatibility with DDR2 memory controllers that follow JEDEC specifications.
• On-chip DLL and differential clocking — Improves timing alignment between DQ and DQS for reliable high-speed transfers at 400 MHz clock rates.
• On-Die Termination and OCD — Built-in termination and impedance adjustment reduce external termination complexity and help maintain signal integrity.
• Flexible latency and burst configurations — Multiple CAS and additive latency options plus burst length choices allow tuning for application-specific performance and throughput.
• Compact surface-mount BGA — 84-ball BGA footprint provides a small board area while supporting high-density parallel memory integration.
• Commercial operating range and RoHS compliance — Designed for commercial applications with JEDEC qualification and RoHS status for regulatory compliance.

Why Choose M14D1G1664A-2(2P)?

The M14D1G1664A-2(2P) positions itself as a practical DDR2 memory option when you require a JEDEC-standard, 1.074 Gbit DDR2 device in a compact 84-ball BGA package. With on-chip DLL, differential clocking, ODT and OCD features, it provides the timing control and signal integrity features engineers rely on for 400 MHz (DDR2-800) designs.

This device is suited for commercial-grade designs needing a standardized DDR2 memory building block with configurable latency and burst behavior, compact board-level integration, and temperature support up to +95 °C.

Request a quote or submit an inquiry to learn about availability, lead times, and packaging options for the M14D1G1664A-2(2P).