M14D1G8128A-1.8BG2P
| Part Description |
DDR2 SDRAM 1Gbit (128M × 8) 533MHz 1.8V 60-FBGA |
|---|---|
| Quantity | 1,060 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 60-FBGA | Memory Format | DRAM | Technology | DRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 1 Gbit | Access Time | 15 ns | Grade | Commercial | ||
| Clock Frequency | 533 MHz | Voltage | 1.7V ~ 1.9V | Memory Type | Volatile | ||
| Operating Temperature | 0°C – 95°C | Write Cycle Time Word Page | 15 ns | Packaging | 60-FBGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 128M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.32 |
Overview of M14D1G8128A-1.8BG2P – DDR2 SDRAM 1Gbit (128M × 8) 533MHz 1.8V 60-FBGA
The M14D1G8128A-1.8BG2P is a 1.074 Gbit DDR2 SDRAM organized as 128M × 8, optimized for system memory applications that require DDR2-1066 data rates (533 MHz clock). Built on a DDR II SDRAM architecture with internal pipelined double-data-rate operation, this device provides standard DDR2 features such as on-chip DLL, differential clock inputs and an 8-bank organization to support high-throughput parallel memory interfaces.
Designed and manufactured by ESMT, the device operates from a 1.7 V to 1.9 V supply (nominal 1.8 V), is JEDEC-qualified, and is supplied in a 60-ball FBGA surface-mount package for compact board-level integration.
Key Features
- Memory Core 1.074 Gbit capacity organized as 128M × 8 with 8-bank operation and internal pipelined double-data-rate architecture enabling two data accesses per clock cycle.
- Performance 533 MHz clock frequency (DDR2-1066 equivalent) with CAS latencies programmable across supported values and typical access/write cycle times noted at 15 ns.
- Standards & Qualification JEDEC-standard DDR2 SDRAM signaling and SSTL_18 interface; JEDEC qualification indicated in product specifications.
- Clocking & Timing Differential clock inputs (CLK and CLK̄) and on-chip DLL for alignment of DQ/DQS timing; data I/O transitions on both edges of the data strobe (DQS).
- Data Integrity & Termination On-Die-Termination (ODT) with selectable impedance options (50/75/150 Ω) and Off-Chip-Driver (OCD) impedance adjustment to help maintain signal quality.
- Flexible Burst & Latency Options Burst Length 4 or 8 with Sequential and Interleave modes; CAS Latency options and additive latency selections supported for system tuning.
- Refresh & Self-Refresh Auto and self-refresh support with refresh cycle options: 8192 cycles/64 ms at 0 °C ≤ Tc ≤ +85 °C and 8192 cycles/32 ms at +85 °C < Tc ≤ +95 °C.
- Power Nominal 1.8 V (VDD, VDDQ ±0.1 V) supply range of 1.7 V to 1.9 V and separate VDDL/VSSDL domains for DLL supply isolation.
- Package & Mounting 60-ball FBGA surface-mount package for compact PCB footprint and reliable soldered attachment.
- Operating Range Commercial grade operation from 0 °C to 95 °C.
Typical Applications
- System Memory Use as main volatile memory in platforms requiring DDR2 SDRAM capacity and DDR2-1066 class data rates.
- Embedded Platforms Integration where a compact 60-FBGA package and 1.074 Gbit density meet board-level space and memory-density requirements.
- Consumer and Industrial Electronics Suitable for designs that require JEDEC-standard DDR2 signaling, on-die termination and programmable timing for system tuning.
Unique Advantages
- High Density in a Compact Package: 1.074 Gbit organized as 128M × 8 in a 60-FBGA enables significant memory capacity in a small board footprint.
- DDR2-1066 Class Performance: 533 MHz clock operation provides DDR2-1066 equivalent data rate capability for systems targeting higher throughput.
- JEDEC Compliance: JEDEC-standard DDR2 implementation simplifies integration with standard memory controllers and design flows.
- Flexible Termination and Signal Control: On-Die-Termination (50/75/150 Ω) and OCD impedance adjustment support improved signal integrity across PCB designs.
- Programmable Timing Options: Multiple CAS and additive latency settings, along with burst length and type choices, allow designers to tune timing for target workloads.
- Robust Thermal Refresh Support: Refresh interval options adjust for higher temperature operation up to +95 °C to maintain data retention across the specified operating range.
Why Choose M14D1G8128A-1.8BG2P?
The ESMT M14D1G8128A-1.8BG2P delivers a balance of capacity, DDR2 performance and board-level integration. With a 1.074 Gbit density, DDR II pipelined architecture, on-chip DLL, ODT options and JEDEC-standard signaling, it fits designs that require a compact, configurable DDR2 SDRAM solution in a 60-FBGA package.
This device is suited to engineers and procurement teams specifying DDR2 system memory where 1.8 V supply operation, JEDEC compatibility and defined commercial temperature range (0 °C to 95 °C) are required. The combination of programmable timing options and termination features helps optimize signal integrity and timing behavior for a range of board designs.
Request a quote or submit an inquiry to obtain pricing and availability for M14D1G8128A-1.8BG2P and to discuss volume, lead time and packaging options.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
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