M14D1G8128A-1.8BG2P

1Gb DDR2 SDRAM
Part Description

DDR2 SDRAM 1Gbit (128M × 8) 533MHz 1.8V 60-FBGA

Quantity 1,060 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package60-FBGAMemory FormatDRAMTechnologyDRAM
Memory Size1 GbitAccess Time15 nsGradeCommercial
Clock Frequency533 MHzVoltage1.7V ~ 1.9VMemory TypeVolatile
Operating Temperature0°C – 95°CWrite Cycle Time Word Page15 nsPackaging60-FBGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization128M x 8
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.32

Overview of M14D1G8128A-1.8BG2P – DDR2 SDRAM 1Gbit (128M × 8) 533MHz 1.8V 60-FBGA

The M14D1G8128A-1.8BG2P is a 1.074 Gbit DDR2 SDRAM organized as 128M × 8, optimized for system memory applications that require DDR2-1066 data rates (533 MHz clock). Built on a DDR II SDRAM architecture with internal pipelined double-data-rate operation, this device provides standard DDR2 features such as on-chip DLL, differential clock inputs and an 8-bank organization to support high-throughput parallel memory interfaces.

Designed and manufactured by ESMT, the device operates from a 1.7 V to 1.9 V supply (nominal 1.8 V), is JEDEC-qualified, and is supplied in a 60-ball FBGA surface-mount package for compact board-level integration.

Key Features

  • Memory Core 1.074 Gbit capacity organized as 128M × 8 with 8-bank operation and internal pipelined double-data-rate architecture enabling two data accesses per clock cycle.
  • Performance 533 MHz clock frequency (DDR2-1066 equivalent) with CAS latencies programmable across supported values and typical access/write cycle times noted at 15 ns.
  • Standards & Qualification JEDEC-standard DDR2 SDRAM signaling and SSTL_18 interface; JEDEC qualification indicated in product specifications.
  • Clocking & Timing Differential clock inputs (CLK and CLK̄) and on-chip DLL for alignment of DQ/DQS timing; data I/O transitions on both edges of the data strobe (DQS).
  • Data Integrity & Termination On-Die-Termination (ODT) with selectable impedance options (50/75/150 Ω) and Off-Chip-Driver (OCD) impedance adjustment to help maintain signal quality.
  • Flexible Burst & Latency Options Burst Length 4 or 8 with Sequential and Interleave modes; CAS Latency options and additive latency selections supported for system tuning.
  • Refresh & Self-Refresh Auto and self-refresh support with refresh cycle options: 8192 cycles/64 ms at 0 °C ≤ Tc ≤ +85 °C and 8192 cycles/32 ms at +85 °C < Tc ≤ +95 °C.
  • Power Nominal 1.8 V (VDD, VDDQ ±0.1 V) supply range of 1.7 V to 1.9 V and separate VDDL/VSSDL domains for DLL supply isolation.
  • Package & Mounting 60-ball FBGA surface-mount package for compact PCB footprint and reliable soldered attachment.
  • Operating Range Commercial grade operation from 0 °C to 95 °C.

Typical Applications

  • System Memory Use as main volatile memory in platforms requiring DDR2 SDRAM capacity and DDR2-1066 class data rates.
  • Embedded Platforms Integration where a compact 60-FBGA package and 1.074 Gbit density meet board-level space and memory-density requirements.
  • Consumer and Industrial Electronics Suitable for designs that require JEDEC-standard DDR2 signaling, on-die termination and programmable timing for system tuning.

Unique Advantages

  • High Density in a Compact Package: 1.074 Gbit organized as 128M × 8 in a 60-FBGA enables significant memory capacity in a small board footprint.
  • DDR2-1066 Class Performance: 533 MHz clock operation provides DDR2-1066 equivalent data rate capability for systems targeting higher throughput.
  • JEDEC Compliance: JEDEC-standard DDR2 implementation simplifies integration with standard memory controllers and design flows.
  • Flexible Termination and Signal Control: On-Die-Termination (50/75/150 Ω) and OCD impedance adjustment support improved signal integrity across PCB designs.
  • Programmable Timing Options: Multiple CAS and additive latency settings, along with burst length and type choices, allow designers to tune timing for target workloads.
  • Robust Thermal Refresh Support: Refresh interval options adjust for higher temperature operation up to +95 °C to maintain data retention across the specified operating range.

Why Choose M14D1G8128A-1.8BG2P?

The ESMT M14D1G8128A-1.8BG2P delivers a balance of capacity, DDR2 performance and board-level integration. With a 1.074 Gbit density, DDR II pipelined architecture, on-chip DLL, ODT options and JEDEC-standard signaling, it fits designs that require a compact, configurable DDR2 SDRAM solution in a 60-FBGA package.

This device is suited to engineers and procurement teams specifying DDR2 system memory where 1.8 V supply operation, JEDEC compatibility and defined commercial temperature range (0 °C to 95 °C) are required. The combination of programmable timing options and termination features helps optimize signal integrity and timing behavior for a range of board designs.

Request a quote or submit an inquiry to obtain pricing and availability for M14D1G8128A-1.8BG2P and to discuss volume, lead time and packaging options.

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