M14D2561616A-1.5BG2C
| Part Description |
DDR2 SDRAM 256Mbit (16M × 16) 667MHz 1.8V 84-FBGA |
|---|---|
| Quantity | 617 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 84-FBGA (8x12.5) | Memory Format | DRAM | Technology | DRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 15 ns | Grade | Commercial | ||
| Clock Frequency | 667 MHz | Voltage | 1.7V ~ 1.9V | Memory Type | Volatile | ||
| Operating Temperature | 0°C – 95°C | Write Cycle Time Word Page | 15 ns | Packaging | 84-FBGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.24 |
Overview of M14D2561616A-1.5BG2C – DDR2 SDRAM 256Mbit (16M × 16) 667MHz 1.8V 84-FBGA
The M14D2561616A-1.5BG2C is a JEDEC-standard DDR2 SDRAM organized as 16M × 16 for a total memory density of 268.4 Mbit. It implements internal pipelined double-data-rate architecture with on-chip DLL and differential DQS to deliver dual-edge data transfers at a 667 MHz clock (DDR2-1333 data rate).
Designed for surface-mount applications, this device operates from a 1.7 V–1.9 V supply and is supplied in an 84-ball FBGA (8 mm × 12.5 mm) package. It includes on-die termination, selectable ODT impedance, and refresh/self-refresh features for stable operation over its commercial temperature range.
Key Features
- Memory Architecture — Organized as 16M × 16 with 4 internal banks and a 1 KB page size, enabling standard DDR2 read/write operations.
- Data Rate & Timing — Rated for 667 MHz (DDR2-1333) operation with supported CAS latencies from 3 to 9 and additive latency options; the packaged part is specified as DDR2-1333 (9-10-10).
- DDR2 Core Technologies — Internal pipelined double-data-rate architecture, on-chip DLL, differential clock inputs and bi-directional differential data strobe (DQS/ /DQS) for dual-edge data capture.
- Interface & Burst — Parallel memory interface supporting burst lengths of 4 and 8 with sequential and interleave burst types; data I/O transitions are aligned with DQS.
- On-Die Termination & OCD — On-Die-Termination (ODT) with selectable 50/75/150 Ω options and Off-Chip-Driver (OCD) impedance adjustment to support signal integrity tuning.
- Refresh & Self-Refresh — Auto and self-refresh support with JEDEC refresh rates: 8192 cycles/64 ms at 0 °C–85 °C and 8192 cycles/32 ms at >85 °C–95 °C; supports Partial Array Self Refresh (PASR) and high temperature self refresh enable.
- Power — Standard DDR2 supply: VDD = 1.8 V ±0.1 V (device specified range 1.7 V–1.9 V) for low-voltage operation.
- Package & Mounting — 84-ball FBGA (8 mm × 12.5 mm × 1.2 mm body, 0.8 mm ball pitch) for compact surface-mount designs.
- Temperature & Grade — Commercial grade operation with an operating temperature range of 0 °C to 95 °C.
- Standards & Compliance — JEDEC-standard DDR2 SDRAM architecture and RoHS-compliant.
Typical Applications
- Memory subsystem modules — As a DDR2 memory device for module designs requiring 16M × 16 organization and DDR2-1333 timing.
- Board-level DRAM integration — For designers implementing parallel DDR2 interfaces in space-constrained, surface-mount BGA form factors.
- System-level memory expansion — To provide additional volatile storage where 1.8 V DDR2 operation and on-die termination are required for signal integrity tuning.
Unique Advantages
- High-speed DDR2-1333 capability — 667 MHz clock rate supports DDR2-1333 transfers, enabling higher throughput in compatible designs.
- Flexible timing options — Wide CAS latency and additive latency ranges allow design tuning to meet system timing and performance targets.
- Signal integrity features — Differential DQS, on-chip DLL, selectable ODT and OCD impedance adjustment help maintain reliable high-speed data transfers.
- Compact FBGA package — 84-ball FBGA provides dense mounting for board-level integration while preserving a small PCB footprint.
- Standards-based implementation — JEDEC compliance and documented refresh/self-refresh behaviors simplify system integration and validation.
- RoHS-compliant — Meets RoHS requirements for lead-free assembly processes.
Why Choose M14D2561616A-1.5BG2C?
The M14D2561616A-1.5BG2C positions itself as a JEDEC-compliant DDR2 SDRAM device offering DDR2-1333 performance, flexible timing, and on-die termination options in a compact 84-ball FBGA. Its 1.8 V operating point, built-in DLL and differential DQS make it suitable for designs that need standard DDR2 features with selectable signal-integrity tuning.
This device is appropriate for engineers and procurement teams specifying board-level DDR2 memory where documented timing options, refresh behavior, and commercial temperature operation (0 °C to 95 °C) are required. The combination of density, package, and supported DDR2 features provides straightforward integration into systems that require parallel DDR2 memory at the specified data rate.
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