M14D1G8128A-1(2P)
| Part Description |
DDRII SDRAM 1.8V |
|---|---|
| Quantity | 701 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 60 Ball BGA | Memory Format | DRAM | Technology | DDR2 SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 1 Gbit | Access Time | 15 ns | Grade | Commercial | ||
| Clock Frequency | 667 MHz | Voltage | 2.5V | Memory Type | Volatile | ||
| Operating Temperature | 0°C – 95°C | Write Cycle Time Word Page | 15 ns | Packaging | 60 Ball BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 128M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.32 |
Overview of M14D1G8128A-1(2P) – DDRII SDRAM 1.8V
The M14D1G8128A-1(2P) is a DDR2 SDRAM device from ESMT providing 1.074 Gbit of volatile DRAM organized as 128M × 8. Implemented with an internal pipelined double-data-rate architecture, it delivers two data accesses per clock cycle and is targeted at commercial-grade memory applications where JEDEC compatibility, flexible timing and compact BGA packaging are required.
Designed for board-level integration, this device combines on-chip timing and signal features to support high-speed system memory and buffer functions in commercial systems operating within 0 °C to 95 °C.
Key Features
- Memory Architecture DDR2 SDRAM, 1.074 Gbit total capacity, organized as 128M × 8 with 8-bank operation for efficient row/column access patterns.
- Performance Supports a clock frequency up to 667 MHz with typical access times specified as 15 ns and write cycle time (word/page) of 15 ns.
- JEDEC Compatibility & Timing Options JEDEC-standard device with selectable CAS latency options (3, 4, 5, 6, 7) and additive latency (0–6). Burst lengths of 4 and 8 and burst type options (sequential/interleave) are supported.
- Signal Integrity & Interfaces Differential clock inputs (CLK/CLK̄), bi-directional differential data strobe (DQS/DQS̄) with read/write alignment, on-die termination (ODT) and Off-Chip-Driver (OCD) impedance adjustment for improved signal quality. SSTL_18 interface supported.
- Built-in Timing and Refresh On-chip DLL and duty cycle corrector align data timing; auto and self-refresh supported with defined refresh intervals (8192 cycles/64 ms at 0 °C–85 °C; 8192 cycles/32 ms at >85 °C–95 °C).
- Power Nominal VDD = 1.8 V ±0.1 V and VDDQ = 1.8 V ±0.1 V as specified; on-die termination options include 50/75/150 Ω.
- Package & Mounting Surface-mount 60-ball BGA package (60 Ball BGA) for compact PCB integration.
- Commercial Grade & Temperature Range Commercial grade device with operating temperature range of 0 °C to 95 °C.
Typical Applications
- Commercial embedded systems — System memory and buffering where JEDEC-standard DDR2 SDRAM and a compact BGA footprint are required.
- Board-level memory expansion — Integration on memory modules or custom PCBs needing 1.074 Gbit DDR2 in a 128M × 8 organization.
- High-speed data buffering — Temporary storage and buffering functions that leverage double-data-rate transfers and on-die termination for signal integrity.
Unique Advantages
- JEDEC-standard interoperability — Ensures predictable behavior and compatibility within JEDEC-compliant DDR2 system designs.
- Flexible timing configuration — Multiple CAS and additive latency options plus burst-type/length choices enable tuning for a range of system timing requirements.
- Signal-quality features — On-die termination, OCD impedance adjustment and differential clock/DQS signaling help maintain signal integrity at higher data rates.
- Compact BGA footprint — 60-ball BGA surface-mount package reduces PCB area for space-constrained designs.
- Commercial temperature support — Rated for 0 °C to 95 °C, suitable for a wide range of commercial environments.
Why Choose M14D1G8128A-1(2P)?
The M14D1G8128A-1(2P) is positioned for commercial designs that require JEDEC-compliant DDR2 memory with flexible timing, integrated timing and signal features, and a compact 60-ball BGA package. Its combination of up to 667 MHz operation, selectable latency settings, on-die termination and DLL support makes it a practical choice for designers implementing board-level DDR2 memory solutions.
With vendor-provided datasheet specifications and commercial-grade operating limits, this device suits teams looking for a stable, verifiable DDR2 memory component for integration into memory modules, embedded platforms and high-speed buffering roles.
If you would like pricing, availability or to request a quote for the M14D1G8128A-1(2P), submit a request and our team will respond with a quote and ordering information.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A