M14D1G8128A-2(2P)
| Part Description |
DDRII SDRAM 1.8V |
|---|---|
| Quantity | 1,038 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 60 Ball BGA | Memory Format | DRAM | Technology | DDR2 SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 1 Gbit | Access Time | 15 ns | Grade | Commercial | ||
| Clock Frequency | 400 MHz | Voltage | 2.5V | Memory Type | Volatile | ||
| Operating Temperature | 0°C – 95°C | Write Cycle Time Word Page | 15 ns | Packaging | 60 Ball BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 128M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.32 |
Overview of M14D1G8128A-2(2P) – DDRII SDRAM 1.8V
The M14D1G8128A-2(2P) is a DDR2 SDRAM device organized as 128M × 8, providing 1.074 Gbit of volatile DRAM storage. It implements an internal pipelined double-data-rate architecture with two data accesses per clock cycle and is specified for a 400 MHz clock frequency.
Designed for systems requiring JEDEC-qualified DDR2 memory, this device operates from a 1.8 V supply domain and is offered in a compact 60‑ball BGA surface-mount package with an operating temperature range of 0 °C to 95 °C.
Key Features
- Core Architecture Internal pipelined double-data-rate operation enabling two data transfers per clock cycle; on-chip DLL and duty cycle corrector for timing alignment.
- Memory Capacity & Organization 1.074 Gbit total capacity organized as 128M × 8 with 8-bank operation to support efficient row/column access.
- Performance & Timing Clock frequency rated at 400 MHz with an access time of 15 ns and a write cycle time (word/page) of 15 ns; supports multiple CAS and additive latency settings per JEDEC.
- High‑Speed I/O and Signaling Bi-directional differential data strobe (DQS/DQS¯) with differential clock inputs (CLK/CLK¯) and SSTL_18 interface signaling.
- Signal Integrity & Termination On-die termination (ODT) with selectable impedance (50/75/150 Ω) and off-chip-driver (OCD) impedance adjustment to improve signal quality.
- Flexible Burst & Latency Options Supports burst lengths of 4 and 8, burst types sequential and interleave, CAS latencies (3–7) and additive latency (0–6) for tuning performance.
- Power Domains VDD, VDDQ and VDDL supply domains defined for core, DQ and DLL respectively; device specified with VDD = 1.8 V ±0.1 V (per datasheet).
- Package & Thermal 60 Ball BGA surface-mount package; operating temperature range 0 °C to 95 °C.
- Standards & Compliance JEDEC-qualified DDR2 SDRAM and RoHS compliant.
Unique Advantages
- Deterministic timing control: On-chip DLL and duty cycle correction help align data and strobe edges for predictable timing behavior.
- Improved signal integrity: On-die termination and OCD impedance adjustment reduce reflection and help maintain reliable high-speed signaling.
- Configurable performance: Multiple CAS and additive latency options plus burst modes enable designers to tune latency and throughput to system needs.
- Compact surface-mount package: 60‑ball BGA minimizes board area while supporting the required power and signal routing for DDR2 operation.
- Industry qualification and compliance: JEDEC qualification and RoHS compliance support integration into standards-driven designs.
Why Choose M14D1G8128A-2(2P)?
The M14D1G8128A-2(2P) positions itself as a JEDEC-qualified DDR2 memory option for designs needing 1.074 Gbit of DDR2 SDRAM capacity at a 400 MHz clock rate and 1.8 V supply operation. Its combination of on-chip DLL, ODT, and flexible latency/burst settings provides designers with practical tools to manage timing, signal integrity, and throughput in compact, surface-mount implementations.
This device is well suited for projects where verified DDR2 behavior, compact package format, and JEDEC conformance are important for long-term design robustness and maintainability.
Request a quote or submit an inquiry for M14D1G8128A-2(2P) to receive pricing and availability details tailored to your volume and delivery requirements.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
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Revenue: $377.8 Million
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