M14D2561616A-1.5BG2S
| Part Description |
DDR2 SDRAM 256Mbit (16M × 16) 667MHz 1.8V 84-FBGA |
|---|---|
| Quantity | 459 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 84-FBGA (8x12.5) | Memory Format | DRAM | Technology | DRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 15 ns | Grade | Commercial | ||
| Clock Frequency | 667 MHz | Voltage | 1.7V ~ 1.9V | Memory Type | Volatile | ||
| Operating Temperature | 0°C – 95°C | Write Cycle Time Word Page | 15 ns | Packaging | 84-FBGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.24 |
Overview of M14D2561616A-1.5BG2S – DDR2 SDRAM 256Mbit (16M × 16) 667MHz 1.8V 84-FBGA
The M14D2561616A-1.5BG2S is a DDR2 SDRAM device from ESMT organized as 16M × 16 for a 256Mbit class memory density. It implements an internal pipelined double-data-rate architecture with differential clock inputs and on-chip DLL to support two data accesses per clock cycle.
This JEDEC-standard DDR2 component operates at up to 667 MHz with a nominal 1.8 V supply (1.7 V–1.9 V range), and is delivered in an 84-ball FBGA (8 × 12.5 mm) package for surface-mount applications requiring a compact parallel memory interface.
Key Features
- Memory Organization and Density — 16M × 16 organization delivering a 256Mbit class device suitable for parallel memory systems.
- DDR2 Architecture — Internal pipelined double-data-rate operation with bi-directional differential data strobe (DQS) and differential clock inputs (CLK/CLK̅) for DDR2 timing and data transfer.
- Performance and Timing — Supports up to 667 MHz clock frequency (DDR2-1333 data rate) with selectable CAS latencies from 3 to 9 and burst lengths of 4 and 8; write cycle time and access time parameters include 15 ns figures where specified.
- Signal Integrity and Timing Control — On-chip DLL, DQS alignment (edge-aligned for READ, center-aligned for WRITE), On-Die Termination (ODT) and OCD impedance adjustment for enhanced signal quality; DCC (Duty Cycle Corrector) supported.
- Refresh and Power Management — Auto and self-refresh support with defined refresh intervals (8192 cycles/64 ms at 0 °C to +85 °C; 8192 cycles/32 ms at +85 °C to +95 °C) and Partial Array Self Refresh (PASR) capability.
- Voltage and Interface Standards — Nominal VDD = 1.8 V (operating range 1.7 V–1.9 V) and SSTL_18 interface compatibility for standard DDR2 signaling.
- Package and Environmental — 84-FBGA (8 × 12.5 mm, 0.8 mm ball pitch) surface-mount package; RoHS compliant.
- Qualification — JEDEC standard compliant DDR2 SDRAM.
Typical Applications
- Systems requiring compact parallel DDR2 memory — Use where a 256Mbit DDR2 SDRAM in an 84-FBGA package with a 16M × 16 organization is required.
- Designs needing defined voltage and timing ranges — Suited to designs that operate within the 1.7 V–1.9 V supply window and require DDR2 timing modes up to 667 MHz.
- Low-profile module implementations — Applicable for board-level implementations that demand surface-mount FBGA memory in a compact footprint.
Unique Advantages
- DDR2-1333 data-rate capability — Rated for 667 MHz operation supporting DDR2-1333 throughput (specified timing example: 9-10-10) for designs targeting this data rate.
- Flexible timing options — Multiple CAS latency and additive latency settings provide tuning options for system timing and performance trade-offs.
- Improved signal quality — On-Die Termination, OCD impedance adjustment and differential DQS/CLK inputs help maintain signal integrity on high-speed memory buses.
- Power and refresh flexibility — Auto/self-refresh, PASR and specified refresh intervals across temperature ranges support reliable data retention and power management.
- JEDEC standard and RoHS compliant — Ensures adherence to industry memory standards and environmental compliance.
- Compact FBGA packaging — 84-ball FBGA (8 × 12.5 mm) provides a small board footprint for space-constrained applications.
Why Choose M14D2561616A-1.5BG2S?
The M14D2561616A-1.5BG2S combines JEDEC-standard DDR2 architecture, a 16M × 16 memory organization and 667 MHz clock capability in a compact 84-FBGA package, making it a practical choice for designs that require a verified DDR2 memory building block with defined timing and voltage ranges. On-chip DLL, DQS support, ODT and refresh features provide designers with the control needed for stable high-speed operation.
Manufactured by ESMT and delivered RoHS compliant, this device is appropriate for system-level designs that benefit from DDR2 signaling, selectable timing profiles and compact board-level integration within the specified operating temperature and voltage ranges.
Request a quote or submit a sales inquiry to obtain pricing, availability and ordering information for the M14D2561616A-1.5BG2S.
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