M14D2561616A-1.5BG2S

256Mb DDR2 SDRAM
Part Description

DDR2 SDRAM 256Mbit (16M × 16) 667MHz 1.8V 84-FBGA

Quantity 459 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package84-FBGA (8x12.5)Memory FormatDRAMTechnologyDRAM
Memory Size256 MbitAccess Time15 nsGradeCommercial
Clock Frequency667 MHzVoltage1.7V ~ 1.9VMemory TypeVolatile
Operating Temperature0°C – 95°CWrite Cycle Time Word Page15 nsPackaging84-FBGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.24

Overview of M14D2561616A-1.5BG2S – DDR2 SDRAM 256Mbit (16M × 16) 667MHz 1.8V 84-FBGA

The M14D2561616A-1.5BG2S is a DDR2 SDRAM device from ESMT organized as 16M × 16 for a 256Mbit class memory density. It implements an internal pipelined double-data-rate architecture with differential clock inputs and on-chip DLL to support two data accesses per clock cycle.

This JEDEC-standard DDR2 component operates at up to 667 MHz with a nominal 1.8 V supply (1.7 V–1.9 V range), and is delivered in an 84-ball FBGA (8 × 12.5 mm) package for surface-mount applications requiring a compact parallel memory interface.

Key Features

  • Memory Organization and Density — 16M × 16 organization delivering a 256Mbit class device suitable for parallel memory systems.
  • DDR2 Architecture — Internal pipelined double-data-rate operation with bi-directional differential data strobe (DQS) and differential clock inputs (CLK/CLK̅) for DDR2 timing and data transfer.
  • Performance and Timing — Supports up to 667 MHz clock frequency (DDR2-1333 data rate) with selectable CAS latencies from 3 to 9 and burst lengths of 4 and 8; write cycle time and access time parameters include 15 ns figures where specified.
  • Signal Integrity and Timing Control — On-chip DLL, DQS alignment (edge-aligned for READ, center-aligned for WRITE), On-Die Termination (ODT) and OCD impedance adjustment for enhanced signal quality; DCC (Duty Cycle Corrector) supported.
  • Refresh and Power Management — Auto and self-refresh support with defined refresh intervals (8192 cycles/64 ms at 0 °C to +85 °C; 8192 cycles/32 ms at +85 °C to +95 °C) and Partial Array Self Refresh (PASR) capability.
  • Voltage and Interface Standards — Nominal VDD = 1.8 V (operating range 1.7 V–1.9 V) and SSTL_18 interface compatibility for standard DDR2 signaling.
  • Package and Environmental — 84-FBGA (8 × 12.5 mm, 0.8 mm ball pitch) surface-mount package; RoHS compliant.
  • Qualification — JEDEC standard compliant DDR2 SDRAM.

Typical Applications

  • Systems requiring compact parallel DDR2 memory — Use where a 256Mbit DDR2 SDRAM in an 84-FBGA package with a 16M × 16 organization is required.
  • Designs needing defined voltage and timing ranges — Suited to designs that operate within the 1.7 V–1.9 V supply window and require DDR2 timing modes up to 667 MHz.
  • Low-profile module implementations — Applicable for board-level implementations that demand surface-mount FBGA memory in a compact footprint.

Unique Advantages

  • DDR2-1333 data-rate capability — Rated for 667 MHz operation supporting DDR2-1333 throughput (specified timing example: 9-10-10) for designs targeting this data rate.
  • Flexible timing options — Multiple CAS latency and additive latency settings provide tuning options for system timing and performance trade-offs.
  • Improved signal quality — On-Die Termination, OCD impedance adjustment and differential DQS/CLK inputs help maintain signal integrity on high-speed memory buses.
  • Power and refresh flexibility — Auto/self-refresh, PASR and specified refresh intervals across temperature ranges support reliable data retention and power management.
  • JEDEC standard and RoHS compliant — Ensures adherence to industry memory standards and environmental compliance.
  • Compact FBGA packaging — 84-ball FBGA (8 × 12.5 mm) provides a small board footprint for space-constrained applications.

Why Choose M14D2561616A-1.5BG2S?

The M14D2561616A-1.5BG2S combines JEDEC-standard DDR2 architecture, a 16M × 16 memory organization and 667 MHz clock capability in a compact 84-FBGA package, making it a practical choice for designs that require a verified DDR2 memory building block with defined timing and voltage ranges. On-chip DLL, DQS support, ODT and refresh features provide designers with the control needed for stable high-speed operation.

Manufactured by ESMT and delivered RoHS compliant, this device is appropriate for system-level designs that benefit from DDR2 signaling, selectable timing profiles and compact board-level integration within the specified operating temperature and voltage ranges.

Request a quote or submit a sales inquiry to obtain pricing, availability and ordering information for the M14D2561616A-1.5BG2S.

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