M14D2561616A-1.8BG2C

The M14D2561616A-1.8BG2C is a JEDEC-standard DDR II SDRAM device from ESMT, organized as 16M × 16 with a listed density of 268.4 Mbit and marketed as 256Mbit. It implements an internal pipelined double-data-rate architecture with differential clock inputs and DQS for high-efficiency parallel memory access at a 533 MHz clock frequency (DDR2‑1066 signaling).

Designed for 1.8 V systems (VDD range 1.7 V to 1.9 V), the device supports commercial operating temperatures (0 °C to 95 °C) and is supplied in an 84-ball FBGA surface-mount package (8 × 12.5 × 1.2 mm body, 0.8 mm ball pitch).

Key Features

• Core & Architecture  Internal pipelined DDR architecture with quad-bank operation, on-chip DLL, and differential clock inputs (CLK/CLK̄) for synchronized double-data-rate transfers.
• Data Strobe & I/O  Bi-directional differential data strobe (DQS/ DQS̄) with edge-aligned READ and center-aligned WRITE operation; DQS can be disabled for single-ended operation.
• Memory Organization & Density  Organized as 16M × 16 with a listed density of 268.4 Mbit and a 1 KB page size; row addresses A0–A12 and column addresses A0–A8 support standard DDR2 memory mapping.
• Performance & Timing  533 MHz clock frequency (DDR2‑1066 data rate), access time and write cycle time of 15 ns; CAS latency options from 3 to 9 and selectable burst lengths 4 and 8 with sequential/interleave burst types.
• Power & Interface  VDD = 1.8 V ±0.1 V (supported range 1.7 V–1.9 V), VDDQ = 1.8 V ±0.1 V, SSTL_18 interface and data mask (DM) inputs for write masking.
• Signal Integrity & Tuning  On-Die Termination (ODT) with selectable 50/75/150 Ω values and Off-Chip-Driver (OCD) impedance adjustment; Duty Cycle Corrector (DCC) for clock stability.
• Refresh & Power Management  Auto and self-refresh support, Partial Array Self Refresh (PASR), and high-temperature self-refresh rate enable; standard refresh cycles specified for 0 °C–85 °C and 85 °C–95 °C ranges.
• Package & Qualification  Surface-mount 84-FBGA (8 × 12.5 mm, 0.8 mm pitch), JEDEC qualification and RoHS compliance; commercial grade temperature range 0 °C to 95 °C.

Typical Applications

• DDR2 system memory  Use as synchronous DDR2 SDRAM in systems requiring 1.8 V SSTL_18 memory interfaces at 533 MHz clock rate.
• Memory modules and subsystems  Integration into board-level memory designs where 84-FBGA packaging and 16M × 16 organization are required.
• Compact high-density boards  Board-level implementations benefiting from the FBGA 8 × 12.5 mm footprint and 0.8 mm pitch.

Unique Advantages

• Flexible timing options: CAS latencies from 3 to 9 and multiple additive latency settings enable tuning for a range of memory controller timing requirements.
• Signal integrity controls: On-Die Termination (50/75/150 Ω) and OCD impedance adjustment help manage board-level signal integrity without external termination networks.
• Robust refresh modes: Auto/self-refresh, PASR and high-temperature refresh rate support reduce power during idle periods and adapt refresh behavior across temperature ranges.
• SSTL_18-compatible interface: Native 1.8 V interface simplifies integration into standard DDR2 platforms and memory subsystems.
• Compact BGA package: 84-ball FBGA (8 × 12.5 × 1.2 mm) supports high‑density layouts while maintaining surface-mount assembly convenience.

Why Choose M14D2561616A-1.8BG2C?

The M14D2561616A-1.8BG2C provides a JEDEC-standard DDR II SDRAM solution optimized for 1.8 V SSTL_18 systems running at a 533 MHz clock frequency (DDR2‑1066 data rate). Its combination of flexible timing (CAS 3–9), on-die termination options, DQS-based double-data-rate transfers and refresh management features makes it suitable for designs that require predictable DDR2 performance in a compact 84-FBGA package.

With commercial temperature qualification, JEDEC compliance and RoHS status, this device is positioned for commercial memory subsystem designs where established DDR2 feature sets, signal integrity controls and compact packaging are key selection criteria.

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