M14D2561616A-1.6BG2S
| Part Description |
DDR2 SDRAM 256Mbit (16M × 16) 600MHz 1.8V 84-FBGA (Die Only) |
|---|---|
| Quantity | 424 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 84-FBGA (8x12.5) | Memory Format | DRAM | Technology | DRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 15 ns | Grade | Commercial | ||
| Clock Frequency | 600 MHz | Voltage | 1.7V ~ 1.9V | Memory Type | Volatile | ||
| Operating Temperature | 0°C – 95°C | Write Cycle Time Word Page | 15 ns | Packaging | 84-FBGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.24 |
Overview of M14D2561616A-1.6BG2S – DDR2 SDRAM 256Mbit (16M × 16) 600MHz 1.8V 84-FBGA (Die Only)
The M14D2561616A-1.6BG2S is a 256Mbit DDR2 SDRAM organized as 16M × 16, optimized for 1.8V commercial-class systems. It implements an internal pipelined double-data-rate architecture with differential clocks and SSTL_18 signaling to deliver DDR2-1200 (600MHz) operation for board-level memory integration.
Designed for applications that require a parallel DDR2 memory interface, this device offers selectable CAS latencies, on-die termination, and a compact 84-ball FBGA package suitable for high-density layouts.
Key Features
- Core architecture Internal pipelined double-data-rate design with bi-directional differential data strobe (DQS) and on-chip DLL for aligned DQ/DQS timing.
- Memory organization 16M × 16 organization delivering 268.4 Mbit total density with 1KB page size and quad-bank operation.
- Performance and timing Rated for 600MHz clock (DDR2-1200), with CAS Latency options 3–9 and burst lengths of 4 or 8; typical access/write cycle times specified at 15 ns.
- Power and supply Standard DDR2 supply: VDD / VDDQ = 1.8V ±0.1V (supported operating range 1.7V–1.9V) suitable for SSTL_18 systems.
- Interface and signal features Differential clock inputs (CLK/CLKn), DQS edge-aligned for READ and center-aligned for WRITE, data mask (DM), and SSTL_18 compatibility for board-level DDR2 designs.
- Signal integrity and tuning On-Die Termination (ODT) with selectable ODT values and Off-Chip-Driver (OCD) impedance adjustment for improved signal quality.
- Refresh and low-power modes Auto and self-refresh support, Partial Array Self Refresh (PASR), High Temperature Self Refresh enable, and JEDEC-compliant refresh rates.
- Package and mounting 84-ball FBGA package (8.0 × 12.5 mm, 0.8 mm ball pitch) offered as die only speed grade for compact surface-mount integration.
- Commercial qualification and compliance JEDEC-standard DDR2 SDRAM, commercial grade with RoHS compliance and documented electrical/functional specifications.
Typical Applications
- Commercial embedded systems Implements as board-level volatile memory where a 256Mbit DDR2 device with 1.8V supply and DDR2-1200 timing is required.
- Memory expansion on controller boards Provides parallel DDR2 storage for designs needing burst lengths of 4 or 8 and selectable CAS latencies for latency/performance trade-offs.
- High-speed buffer and frame storage Suited for designs that leverage 600MHz operation and on-die termination to maintain signal integrity at high data rates.
Unique Advantages
- DDR2-1200 (600MHz) performance: Delivers high data-rate operation suitable for systems targeting DDR2-1200 timing.
- Flexible timing and burst control: Wide CAS latency support (3–9) and burst length options (4, 8) allow tuning for system timing and throughput needs.
- Signal integrity features: On-Die Termination, OCD impedance adjustment, and differential clock/DQS support reduce board-level signal tuning effort.
- Compact FBGA footprint: 84-ball FBGA (8 × 12.5 mm) supports high-density board layouts while providing a die-only speed grade for custom assembly flows.
- JEDEC standard compliance: Conforms to DDR2 JEDEC specifications and includes standard refresh behavior and self-refresh features for reliable memory operation.
- Commercial-grade operating range: Rated for 0 °C to 95 °C operation and RoHS-compliant materials for mainstream commercial applications.
Why Choose M14D2561616A-1.6BG2S?
The M14D2561616A-1.6BG2S positions itself as a high-frequency DDR2 memory option for commercial designs that require a 256Mbit density, 1.8V operation, and DDR2-1200 timing. Its combination of selectable latencies, on-die termination, and differential signaling enables designers to address high-throughput board-level memory requirements while maintaining signal integrity.
Engineers specifying this device benefit from JEDEC-standard DDR2 behavior, documented timing and refresh characteristics, and a compact 84-ball FBGA package for dense PCB implementations—making it suitable for a range of commercial embedded and system-level memory applications.
Request a quote or submit a purchase inquiry to evaluate M14D2561616A-1.6BG2S for your next DDR2 memory design.
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