M14D2561616A-1.6BG2S

256Mb DDR2 SDRAM
Part Description

DDR2 SDRAM 256Mbit (16M × 16) 600MHz 1.8V 84-FBGA (Die Only)

Quantity 424 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package84-FBGA (8x12.5)Memory FormatDRAMTechnologyDRAM
Memory Size256 MbitAccess Time15 nsGradeCommercial
Clock Frequency600 MHzVoltage1.7V ~ 1.9VMemory TypeVolatile
Operating Temperature0°C – 95°CWrite Cycle Time Word Page15 nsPackaging84-FBGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.24

Overview of M14D2561616A-1.6BG2S – DDR2 SDRAM 256Mbit (16M × 16) 600MHz 1.8V 84-FBGA (Die Only)

The M14D2561616A-1.6BG2S is a 256Mbit DDR2 SDRAM organized as 16M × 16, optimized for 1.8V commercial-class systems. It implements an internal pipelined double-data-rate architecture with differential clocks and SSTL_18 signaling to deliver DDR2-1200 (600MHz) operation for board-level memory integration.

Designed for applications that require a parallel DDR2 memory interface, this device offers selectable CAS latencies, on-die termination, and a compact 84-ball FBGA package suitable for high-density layouts.

Key Features

  • Core architecture  Internal pipelined double-data-rate design with bi-directional differential data strobe (DQS) and on-chip DLL for aligned DQ/DQS timing.
  • Memory organization  16M × 16 organization delivering 268.4 Mbit total density with 1KB page size and quad-bank operation.
  • Performance and timing  Rated for 600MHz clock (DDR2-1200), with CAS Latency options 3–9 and burst lengths of 4 or 8; typical access/write cycle times specified at 15 ns.
  • Power and supply  Standard DDR2 supply: VDD / VDDQ = 1.8V ±0.1V (supported operating range 1.7V–1.9V) suitable for SSTL_18 systems.
  • Interface and signal features  Differential clock inputs (CLK/CLKn), DQS edge-aligned for READ and center-aligned for WRITE, data mask (DM), and SSTL_18 compatibility for board-level DDR2 designs.
  • Signal integrity and tuning  On-Die Termination (ODT) with selectable ODT values and Off-Chip-Driver (OCD) impedance adjustment for improved signal quality.
  • Refresh and low-power modes  Auto and self-refresh support, Partial Array Self Refresh (PASR), High Temperature Self Refresh enable, and JEDEC-compliant refresh rates.
  • Package and mounting  84-ball FBGA package (8.0 × 12.5 mm, 0.8 mm ball pitch) offered as die only speed grade for compact surface-mount integration.
  • Commercial qualification and compliance  JEDEC-standard DDR2 SDRAM, commercial grade with RoHS compliance and documented electrical/functional specifications.

Typical Applications

  • Commercial embedded systems  Implements as board-level volatile memory where a 256Mbit DDR2 device with 1.8V supply and DDR2-1200 timing is required.
  • Memory expansion on controller boards  Provides parallel DDR2 storage for designs needing burst lengths of 4 or 8 and selectable CAS latencies for latency/performance trade-offs.
  • High-speed buffer and frame storage  Suited for designs that leverage 600MHz operation and on-die termination to maintain signal integrity at high data rates.

Unique Advantages

  • DDR2-1200 (600MHz) performance: Delivers high data-rate operation suitable for systems targeting DDR2-1200 timing.
  • Flexible timing and burst control: Wide CAS latency support (3–9) and burst length options (4, 8) allow tuning for system timing and throughput needs.
  • Signal integrity features: On-Die Termination, OCD impedance adjustment, and differential clock/DQS support reduce board-level signal tuning effort.
  • Compact FBGA footprint: 84-ball FBGA (8 × 12.5 mm) supports high-density board layouts while providing a die-only speed grade for custom assembly flows.
  • JEDEC standard compliance: Conforms to DDR2 JEDEC specifications and includes standard refresh behavior and self-refresh features for reliable memory operation.
  • Commercial-grade operating range: Rated for 0 °C to 95 °C operation and RoHS-compliant materials for mainstream commercial applications.

Why Choose M14D2561616A-1.6BG2S?

The M14D2561616A-1.6BG2S positions itself as a high-frequency DDR2 memory option for commercial designs that require a 256Mbit density, 1.8V operation, and DDR2-1200 timing. Its combination of selectable latencies, on-die termination, and differential signaling enables designers to address high-throughput board-level memory requirements while maintaining signal integrity.

Engineers specifying this device benefit from JEDEC-standard DDR2 behavior, documented timing and refresh characteristics, and a compact 84-ball FBGA package for dense PCB implementations—making it suitable for a range of commercial embedded and system-level memory applications.

Request a quote or submit a purchase inquiry to evaluate M14D2561616A-1.6BG2S for your next DDR2 memory design.

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