M14D2561616A-1(2C)

The M14D2561616A-1(2C) is an industrial-grade DDR2 SDRAM device organized as 16M × 16 for a total memory capacity of 268.4 Mbit. It implements a pipelined double-data-rate architecture with quad-bank operation and on-chip DLL to support high-throughput, parallel memory interfaces.

Designed for extended-temperature environments, this device is JEDEC-qualified and specified for operation from -40°C to 95°C. The device targets embedded and industrial systems that require high-speed DDR2 memory with robust timing options and signal-integrity features.

Key Features

• Memory Core & Organization 268.4 Mbit capacity organized as 16M × 16 with quad-bank operation and 1 KB page size; supports burst lengths of 4 and 8 and both sequential and interleave burst types.
• Performance & Timing Supports clock rates up to 667 MHz with a typical access time of 15 ns. CAS latency and additive latency options provide flexible timing control (CAS latency: 3–9; additive latency: 0–7).
• DDR2 Architecture & Interface DDR2 SDRAM with bi-directional differential data strobe (DQS/ /DQS), differential clock inputs (CLK/ /CLK), and SSTL_18 signaling. Data I/O transitions on both edges of DQS for double-data-rate transfers.
• Signal Integrity & On-Chip Features On-Die Termination (ODT), Off-Chip-Driver (OCD) impedance adjustment, and a duty cycle corrector (DCC) to improve signal quality and timing alignment.
• Power & Supply Specified for DDR2 supply operation with VDD = 1.8V ±0.1V and VDDQ = 1.8V ±0.1V as indicated in the product documentation.
• Refresh & Reliability Auto and self-refresh support with temperature-dependent refresh cycles: 8192 cycles/64 ms (7.8 μs interval) at -40°C to +85°C, and 8192 cycles/32 ms (3.9 μs interval) at >+85°C to +95°C; features Partial Array Self Refresh (PASR) and high-temperature self-refresh rate enable.
• Package & Mounting Surface-mount 84-ball BGA (8 mm × 12.5 mm × 1.2 mm body, 0.8 mm ball pitch) for compact board integration and reliable solder-down mounting.
• Industrial Temperature Range Rated for operation from -40°C to +95°C and JEDEC-qualified for industrial applications.

Typical Applications

• Industrial control and automation — Extended temperature rating and JEDEC qualification make this DDR2 device suitable for controllers and embedded modules operating in harsh environments.
• Embedded processors and memory expansion — Parallel DDR2 interface and flexible timing options allow use as system memory or external DRAM for embedded SoCs and microprocessor-based platforms.
• High-temperature instrumentation — Temperature-specific refresh modes and high-temperature self-refresh support continuous operation in thermally demanding instrumentation equipment.
• Networking and communications infrastructure — High clock support and DDR2 throughput characteristics provide buffering and working memory for networking modules and communications interfaces.

Unique Advantages

• Extended operating range — Specified -40°C to +95°C operation reduces the need for additional thermal qualification in industrial deployments.
• Flexible timing configuration — Multiple CAS and additive latency options allow designers to tune performance and timing to match system-level requirements.
• Built-in signal integrity features — On-Die Termination, OCD impedance adjustment, and DCC reduce board-level tuning and improve memory interface robustness.
• Compact, solder-down package — 84-ball BGA minimizes board footprint while providing reliable surface-mount integration for space-constrained designs.
• JEDEC qualification — Complies with JEDEC DDR2 specifications as documented in the product literature, simplifying system-level validation against industry standards.

Why Choose M14D2561616A-1(2C)?

The M14D2561616A-1(2C) delivers DDR2 performance and flexibility in an industrial-grade package that is optimized for extended-temperature embedded systems. With configurable timing, robust signal-integrity features, and JEDEC-based design, it is a practical choice for designers who need a reliable, high-throughput parallel DRAM solution in compact BGA form.

This part suits projects requiring scalable memory bandwidth, reliable operation across a wide temperature range, and straightforward integration into DDR2-capable platforms. Its combination of performance options and on-chip features supports longer-term design stability and simpler board-level tuning.

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