M14D2561616A-2.5BG2S
| Part Description |
DDR2 SDRAM 256Mbit (16M × 16) 400MHz 1.8V 84-FBGA |
|---|---|
| Quantity | 718 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 84-FBGA (8x12.5) | Memory Format | DRAM | Technology | DRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 15 ns | Grade | Commercial | ||
| Clock Frequency | 400 MHz | Voltage | 1.7V ~ 1.9V | Memory Type | Volatile | ||
| Operating Temperature | 0°C – 95°C | Write Cycle Time Word Page | 15 ns | Packaging | 84-FBGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.24 |
Overview of M14D2561616A-2.5BG2S – DDR2 SDRAM 256Mbit (16M × 16) 400MHz 1.8V 84-FBGA
The M14D2561616A-2.5BG2S is a DDR II SDRAM device organized as 16M × 16 with a memory capacity listed in product specifications. It implements an internal pipelined double-data-rate architecture that provides two data accesses per clock cycle and supports a parallel DDR2 interface at a 400 MHz clock rate (DDR2-800).
Designed to operate from a 1.7 V to 1.9 V supply with JEDEC-standard signaling (SSTL_18), the device integrates on-chip DLL, differential clock inputs, differential data strobe (DQS), and on-die termination options to support reliable high-speed data transfer in systems requiring DDR2 memory.
Key Features
- Memory Organization & Capacity — 16M × 16 organization (specification field) providing the device memory capacity for DDR2 system use.
- DDR2 Architecture — Internal pipelined double-data-rate operation with two data accesses per clock cycle, burst lengths of 4 or 8, and both sequential and interleave burst types.
- Speed & Timing — Rated for 400 MHz operation (DDR2-800 speed grade for this part number) with access and write-cycle times indicated at 15 ns in the product specifications; CAS latency and additive latency options are supported as listed in the datasheet.
- Signal Integrity & Timing Controls — Differential data strobe (DQS/ DQS̅) with edge/center alignment modes for read/write, differential clock inputs (CLK/CLK̅), on-chip DLL and Duty Cycle Corrector (DCC) to align data with clock transitions.
- Termination & I/O Drive — On-Die Termination (ODT) and Off-Chip-Driver (OCD) impedance adjustment with selectable ODT values (50/75/150 Ω) for improved signal quality.
- Refresh & Power Management — Auto and self-refresh support with documented refresh cycles (8,192 cycles per 64 ms at 0 °C to +85 °C; 8,192 cycles per 32 ms at +85 °C to +95 °C) and High Temperature Self Refresh enable.
- Voltage & Interface — SSTL_18 interface standard with nominal VDD = 1.8 V ± 0.1 V (product specification lists supply range 1.7 V to 1.9 V).
- Package & Mounting — Surface-mount 84-ball FBGA (8 mm × 12.5 mm, 0.8 mm ball pitch) package for compact board-level integration; supplier device package specified as 84-FBGA (8×12.5).
- Manufacturing & Compliance — JEDEC qualification noted in product data and RoHS-compliant per the supplied environmental information.
Typical Applications
- DDR2 System Memory — Use as parallel DDR2 SDRAM in systems that require a JEDEC-standard 1.8 V SSTL_18 memory interface and DDR2-800 timing at 400 MHz clock rate.
- High-Speed Buffering — Suitable for designs that need double-data-rate transfers with on-die termination and OCD impedance control to maintain signal integrity at DDR2 frequencies.
- Compact Board-Level Integration — 84-FBGA package supports space-constrained PCB designs where surface-mount DDR2 memory is required.
Unique Advantages
- Flexible Timing Options — Multiple CAS latency and additive latency settings give designers timing flexibility to match system requirements as documented in the datasheet.
- Integrated Signal Management — On-chip DLL, DCC, differential DQS and CLK inputs, plus ODT, reduce external timing adjustments and improve high-speed data alignment.
- Configurable Termination — Selectable ODT values and OCD impedance adjustment help optimize signal quality across various board topologies.
- JEDEC Compatibility — JEDEC-standard DDR2 signaling and SSTL_18 interface provide adherence to an established memory standard for system design consistency.
- Compact FBGA Package — 84-ball FBGA (8×12.5 mm) enables dense, surface-mount memory integration on space-limited PCBs.
- Regulatory Compliance — RoHS-compliant construction supports environmental requirements for lead-free designs.
Why Choose M14D2561616A-2.5BG2S?
The M14D2561616A-2.5BG2S positions itself as a JEDEC-compatible DDR2 SDRAM option that combines DDR2-800-rated timing, on-die termination, and signal-management features (DLL, DQS, DCC) to support reliable high-speed memory interfaces at a 1.8 V nominal supply. Its 84-FBGA surface-mount package and documented operating range (0 °C to 95 °C) make it suitable for compact system designs that require standard DDR2 memory behavior and selectable timing configurations.
Choose this device when your design requires a DDR2 memory component that offers configurable timing, integrated termination and drive control, and JEDEC-standard SSTL_18 signaling documented in the product specifications and datasheet.
Request a quote or submit an inquiry to receive pricing, availability, and lead-time information for the M14D2561616A-2.5BG2S DDR2 SDRAM.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
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