M14D5121632A-1.5BG2M
| Part Description |
DDR2 SDRAM 512Mbit (32M × 16) 667MHz, 1.8V, 84‑FBGA (1.2mm) |
|---|---|
| Quantity | 316 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 84-FBGA (8x12.5) | Memory Format | DRAM | Technology | DRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 15 ns | Grade | Commercial | ||
| Clock Frequency | 667 MHz | Voltage | 1.7V ~ 1.9V | Memory Type | Volatile | ||
| Operating Temperature | 0°C – 95°C | Write Cycle Time Word Page | 15 ns | Packaging | 84-FBGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.28 |
Overview of M14D5121632A-1.5BG2M – DDR2 SDRAM 512Mbit (32M × 16) 667MHz, 1.8V, 84‑FBGA (1.2mm)
The M14D5121632A-1.5BG2M from ESMT is a DDR2 SDRAM device organized as 32M × 16 for a total memory size of 536.9 Mbit. It implements a pipelined double-data-rate architecture to deliver two data transfers per clock cycle and supports a maximum clock frequency of 667 MHz.
Designed for commercial-grade systems, this part complies with JEDEC standards, operates from 1.7 V to 1.9 V (nominal 1.8 V), is RoHS compliant and is supplied in a compact 84‑ball FBGA (8 × 12.5 mm) package with a maximum body height of 1.2 mm. Operating temperature is specified from 0 °C to 95 °C.
Key Features
- Memory Organization & Density 32M × 16 organization providing 536.9 Mbit of volatile DRAM storage suitable for DDR2 memory system designs.
- DDR2 Architecture & Performance Internal pipelined double-data-rate architecture enabling two data accesses per clock cycle; device rated for up to 667 MHz operation (DDR2‑1333 data rate for this ordering code).
- Flexible Timing & Burst Support Supports a range of CAS latencies and additive latencies; burst lengths of 4 and 8 with sequential and interleave burst types for flexible memory timing.
- Signal & Timing Features Bi-directional differential data strobe (DQS/DQS̄), differential clock inputs (CLK/CLK̄) and on-chip DLL for DQ/DQS alignment to CLK.
- Signal Integrity Options On-Die Termination (ODT) and Off-Chip-Driver (OCD) impedance adjustment for improved signal quality; SSTL_18 interface signaling.
- Power & Supply VDD/VDDQ nominal 1.8 V (±0.1 V), specified supply range 1.7 V–1.9 V to match standard DDR2 systems.
- Refresh & Low-Power Modes Auto and self refresh support, Partial Array Self Refresh (PASR), and selectable refresh rates including high-temperature refresh intervals per device specification.
- Package & Mounting 84‑FBGA surface-mount package (8 × 12.5 mm, 0.8 mm ball pitch) with a maximum body height of 1.2 mm, enabling compact board footprints.
- Standards & Compliance JEDEC-qualified DDR2 SDRAM design and RoHS-compliant material selection; commercial-grade qualification and specified operating temperature range 0 °C–95 °C.
Typical Applications
- Embedded Systems Use in embedded platforms that require compact, surface-mount DDR2 memory with 1.8 V supply and support for standard DDR2 timing.
- Networking & Communications Suitable for networking modules and communications equipment that need DDR2 SDRAM with on-die termination and differential signaling for signal integrity.
- Consumer & Multimedia Devices Fits consumer devices and multimedia modules where a small BGA footprint and DDR2 performance at up to 667 MHz are required.
Unique Advantages
- Double-Data-Rate Throughput: Two transfers per clock cycle deliver effective DDR2 bandwidth aligned to a 667 MHz clock for higher data throughput.
- Comprehensive Signal Control: Differential DQS/CLK, on-chip DLL and ODT/OCD options provide designers with tools to optimize timing and signal integrity on high-speed buses.
- Compact BGA Package: 84‑ball FBGA (8 × 12.5 mm) enables dense board integration while maintaining standard DDR2 pinout and functionality.
- Standards-Based Interoperability: JEDEC compliance and SSTL_18 interface ensure predictable behavior in standard DDR2 system designs.
- Operational Flexibility: Wide support for CAS and additive latencies, burst types and refresh modes allows tuning for system performance and power trade-offs.
- Regulatory & Environmental Compliance: RoHS-compliant materials support environmental requirements for commercial electronics.
Why Choose M14D5121632A-1.5BG2M?
The M14D5121632A-1.5BG2M balances high-speed DDR2 performance with flexible timing and signal integrity features in a compact 84‑FBGA package. Its JEDEC-qualified DDR2 architecture, on-chip DLL, differential strobe/clocking and ODT options make it suitable for designs that require dependable DDR2 operation at up to 667 MHz while maintaining a small board footprint.
This device is well suited for commercial-grade designs where standard DDR2 signaling, configurable latency and robust refresh management are required. The combination of 1.8 V operation, RoHS compliance and an operating range up to 95 °C offers practical integration for a variety of system-level implementations.
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