M14D5121632A-1.5BG2M

512Mb DDR2 SDRAM
Part Description

DDR2 SDRAM 512Mbit (32M × 16) 667MHz, 1.8V, 84‑FBGA (1.2mm)

Quantity 316 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package84-FBGA (8x12.5)Memory FormatDRAMTechnologyDRAM
Memory Size512 MbitAccess Time15 nsGradeCommercial
Clock Frequency667 MHzVoltage1.7V ~ 1.9VMemory TypeVolatile
Operating Temperature0°C – 95°CWrite Cycle Time Word Page15 nsPackaging84-FBGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.28

Overview of M14D5121632A-1.5BG2M – DDR2 SDRAM 512Mbit (32M × 16) 667MHz, 1.8V, 84‑FBGA (1.2mm)

The M14D5121632A-1.5BG2M from ESMT is a DDR2 SDRAM device organized as 32M × 16 for a total memory size of 536.9 Mbit. It implements a pipelined double-data-rate architecture to deliver two data transfers per clock cycle and supports a maximum clock frequency of 667 MHz.

Designed for commercial-grade systems, this part complies with JEDEC standards, operates from 1.7 V to 1.9 V (nominal 1.8 V), is RoHS compliant and is supplied in a compact 84‑ball FBGA (8 × 12.5 mm) package with a maximum body height of 1.2 mm. Operating temperature is specified from 0 °C to 95 °C.

Key Features

  • Memory Organization & Density 32M × 16 organization providing 536.9 Mbit of volatile DRAM storage suitable for DDR2 memory system designs.
  • DDR2 Architecture & Performance Internal pipelined double-data-rate architecture enabling two data accesses per clock cycle; device rated for up to 667 MHz operation (DDR2‑1333 data rate for this ordering code).
  • Flexible Timing & Burst Support Supports a range of CAS latencies and additive latencies; burst lengths of 4 and 8 with sequential and interleave burst types for flexible memory timing.
  • Signal & Timing Features Bi-directional differential data strobe (DQS/DQS̄), differential clock inputs (CLK/CLK̄) and on-chip DLL for DQ/DQS alignment to CLK.
  • Signal Integrity Options On-Die Termination (ODT) and Off-Chip-Driver (OCD) impedance adjustment for improved signal quality; SSTL_18 interface signaling.
  • Power & Supply VDD/VDDQ nominal 1.8 V (±0.1 V), specified supply range 1.7 V–1.9 V to match standard DDR2 systems.
  • Refresh & Low-Power Modes Auto and self refresh support, Partial Array Self Refresh (PASR), and selectable refresh rates including high-temperature refresh intervals per device specification.
  • Package & Mounting 84‑FBGA surface-mount package (8 × 12.5 mm, 0.8 mm ball pitch) with a maximum body height of 1.2 mm, enabling compact board footprints.
  • Standards & Compliance JEDEC-qualified DDR2 SDRAM design and RoHS-compliant material selection; commercial-grade qualification and specified operating temperature range 0 °C–95 °C.

Typical Applications

  • Embedded Systems Use in embedded platforms that require compact, surface-mount DDR2 memory with 1.8 V supply and support for standard DDR2 timing.
  • Networking & Communications Suitable for networking modules and communications equipment that need DDR2 SDRAM with on-die termination and differential signaling for signal integrity.
  • Consumer & Multimedia Devices Fits consumer devices and multimedia modules where a small BGA footprint and DDR2 performance at up to 667 MHz are required.

Unique Advantages

  • Double-Data-Rate Throughput: Two transfers per clock cycle deliver effective DDR2 bandwidth aligned to a 667 MHz clock for higher data throughput.
  • Comprehensive Signal Control: Differential DQS/CLK, on-chip DLL and ODT/OCD options provide designers with tools to optimize timing and signal integrity on high-speed buses.
  • Compact BGA Package: 84‑ball FBGA (8 × 12.5 mm) enables dense board integration while maintaining standard DDR2 pinout and functionality.
  • Standards-Based Interoperability: JEDEC compliance and SSTL_18 interface ensure predictable behavior in standard DDR2 system designs.
  • Operational Flexibility: Wide support for CAS and additive latencies, burst types and refresh modes allows tuning for system performance and power trade-offs.
  • Regulatory & Environmental Compliance: RoHS-compliant materials support environmental requirements for commercial electronics.

Why Choose M14D5121632A-1.5BG2M?

The M14D5121632A-1.5BG2M balances high-speed DDR2 performance with flexible timing and signal integrity features in a compact 84‑FBGA package. Its JEDEC-qualified DDR2 architecture, on-chip DLL, differential strobe/clocking and ODT options make it suitable for designs that require dependable DDR2 operation at up to 667 MHz while maintaining a small board footprint.

This device is well suited for commercial-grade designs where standard DDR2 signaling, configurable latency and robust refresh management are required. The combination of 1.8 V operation, RoHS compliance and an operating range up to 95 °C offers practical integration for a variety of system-level implementations.

Request a quote or submit an inquiry to receive pricing and availability information for the M14D5121632A-1.5BG2M.

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