M14D2561616A-2(2S)

256Mb DDR SDRAM Ind.
Part Description

Ind. -40~95°C, DDRII , 1.8V

Quantity 1,255 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusActive
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package84 Ball BGAMemory FormatDRAMTechnologyDDR2 SDRAM
Memory Size256 MbitAccess Time15 nsGradeIndustrial
Clock Frequency400 MHzVoltage2.5VMemory TypeVolatile
Operating Temperature-40°C – 95°CWrite Cycle Time Word Page15 nsPackaging84 Ball BGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.24

Overview of M14D2561616A-2(2S) – Ind. -40~95°C, DDRII , 1.8V

The M14D2561616A-2(2S) is an industrial-grade DDR2 SDRAM device from ESMT designed for embedded systems that require robust memory operation across a wide temperature range. It implements a pipelined double-data-rate architecture with a 400 MHz clock frequency and a 16M × 16 organization, providing 268.4 Mbit of volatile DRAM storage in a compact surface-mount BGA package.

Targeted at industrial environments, this JEDEC-compatible DDR2 memory offers programmable latency and advanced signal integrity features to support reliable high-speed parallel memory interfaces at VDD = 1.8 V ±0.1 V and VDDQ = 1.8 V ±0.1 V.

Key Features

  • Core Architecture Internal pipelined double-data-rate architecture with on-chip DLL and differential clock inputs (CLK/CLKN) for two data transfers per clock cycle.
  • Memory Organization & Capacity 16M × 16 organization delivering 268.4 Mbit of volatile DRAM storage with 1 KB page size and quad-bank operation.
  • Performance & Timing 400 MHz clock frequency with listed access time of 15 ns and configurable CAS latency options (3–9) plus additive latency settings.
  • Data I/O and Strobe Bi-directional differential data strobe (DQS / DQS̄) with edge-aligned READ and center-aligned WRITE timing; DQS may be disabled for single-ended operation.
  • Signal Integrity On-Die Termination (ODT) and Off-Chip-Driver (OCD) impedance adjustment with selectable ODT values (50/75/150 Ω) and Duty Cycle Corrector (DCC).
  • Refresh & Power Management Auto and self-refresh support with High Temperature Self Refresh rate enable and Partial Array Self Refresh (PASR); JEDEC refresh cycles specified for extended temperature ranges.
  • Interface & Standards SSTL_18-compatible interface, sampled inputs at clock rising edge, burst types sequential/interleave and burst lengths 4 or 8.
  • Package & Mounting Surface-mount 84-ball BGA package (0.8 mm pitch) suitable for compact board-level integration; JEDEC-qualified industrial grade.
  • Operating Temperature Industrial-rated operation from −40 °C to +95 °C.

Typical Applications

  • Industrial Embedded Systems Memory for controllers and embedded boards that require JEDEC DDR2 compatibility and operation across −40 °C to +95 °C.
  • High‑Temperature Electronics Systems that need reliable DRAM behavior at elevated temperatures, leveraging the device's high-temperature self-refresh provisions and extended refresh rates.
  • Compact Surface‑Mount Designs Space-constrained PCBs benefiting from the 84-ball BGA package and parallel DDR2 interface for dense memory integration.

Unique Advantages

  • Industrial Temperature Range: Rated for −40 °C to +95 °C to support demanding environmental conditions without derating.
  • JEDEC Compatibility: JEDEC-standard DDR2 implementation simplifies design integration and interoperability with standard DDR2 memory controllers.
  • Flexible Timing Configuration: Multiple CAS latency and additive latency options allow designers to tune performance to system timing requirements.
  • Enhanced Signal Quality: On-Die Termination and OCD impedance adjustment (with 50/75/150 Ω ODT choices) improve signal integrity for high-speed operation.
  • Memory Reliability Features: Auto/self-refresh, PASR and temperature-aware refresh intervals help maintain data integrity across temperature extremes.
  • Compact BGA Footprint: 84-ball BGA surface-mount package supports high-density PCB layouts while maintaining robust solder connectivity.

Why Choose M14D2561616A-2(2S)?

The M14D2561616A-2(2S) delivers a balanced combination of industrial temperature capability, JEDEC DDR2 compliance, and advanced signaling/features such as on-die termination and duty-cycle correction. Its 16M × 16 organization, 268.4 Mbit capacity, and flexible timing options make it suitable for embedded applications requiring predictable DDR2 memory behavior under challenging environmental conditions.

This device is well suited for designers seeking a surface-mount DDR2 memory solution with configurable latency, refresh management for high-temperature operation, and a compact 84-ball BGA package for dense board-level integration.

Request a quote or submit an inquiry to obtain pricing, lead time and availability for the M14D2561616A-2(2S).

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