M14D2561616A-2(2S)
| Part Description |
Ind. -40~95°C, DDRII , 1.8V |
|---|---|
| Quantity | 1,255 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 84 Ball BGA | Memory Format | DRAM | Technology | DDR2 SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 15 ns | Grade | Industrial | ||
| Clock Frequency | 400 MHz | Voltage | 2.5V | Memory Type | Volatile | ||
| Operating Temperature | -40°C – 95°C | Write Cycle Time Word Page | 15 ns | Packaging | 84 Ball BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.24 |
Overview of M14D2561616A-2(2S) – Ind. -40~95°C, DDRII , 1.8V
The M14D2561616A-2(2S) is an industrial-grade DDR2 SDRAM device from ESMT designed for embedded systems that require robust memory operation across a wide temperature range. It implements a pipelined double-data-rate architecture with a 400 MHz clock frequency and a 16M × 16 organization, providing 268.4 Mbit of volatile DRAM storage in a compact surface-mount BGA package.
Targeted at industrial environments, this JEDEC-compatible DDR2 memory offers programmable latency and advanced signal integrity features to support reliable high-speed parallel memory interfaces at VDD = 1.8 V ±0.1 V and VDDQ = 1.8 V ±0.1 V.
Key Features
- Core Architecture Internal pipelined double-data-rate architecture with on-chip DLL and differential clock inputs (CLK/CLKN) for two data transfers per clock cycle.
- Memory Organization & Capacity 16M × 16 organization delivering 268.4 Mbit of volatile DRAM storage with 1 KB page size and quad-bank operation.
- Performance & Timing 400 MHz clock frequency with listed access time of 15 ns and configurable CAS latency options (3–9) plus additive latency settings.
- Data I/O and Strobe Bi-directional differential data strobe (DQS / DQS̄) with edge-aligned READ and center-aligned WRITE timing; DQS may be disabled for single-ended operation.
- Signal Integrity On-Die Termination (ODT) and Off-Chip-Driver (OCD) impedance adjustment with selectable ODT values (50/75/150 Ω) and Duty Cycle Corrector (DCC).
- Refresh & Power Management Auto and self-refresh support with High Temperature Self Refresh rate enable and Partial Array Self Refresh (PASR); JEDEC refresh cycles specified for extended temperature ranges.
- Interface & Standards SSTL_18-compatible interface, sampled inputs at clock rising edge, burst types sequential/interleave and burst lengths 4 or 8.
- Package & Mounting Surface-mount 84-ball BGA package (0.8 mm pitch) suitable for compact board-level integration; JEDEC-qualified industrial grade.
- Operating Temperature Industrial-rated operation from −40 °C to +95 °C.
Typical Applications
- Industrial Embedded Systems Memory for controllers and embedded boards that require JEDEC DDR2 compatibility and operation across −40 °C to +95 °C.
- High‑Temperature Electronics Systems that need reliable DRAM behavior at elevated temperatures, leveraging the device's high-temperature self-refresh provisions and extended refresh rates.
- Compact Surface‑Mount Designs Space-constrained PCBs benefiting from the 84-ball BGA package and parallel DDR2 interface for dense memory integration.
Unique Advantages
- Industrial Temperature Range: Rated for −40 °C to +95 °C to support demanding environmental conditions without derating.
- JEDEC Compatibility: JEDEC-standard DDR2 implementation simplifies design integration and interoperability with standard DDR2 memory controllers.
- Flexible Timing Configuration: Multiple CAS latency and additive latency options allow designers to tune performance to system timing requirements.
- Enhanced Signal Quality: On-Die Termination and OCD impedance adjustment (with 50/75/150 Ω ODT choices) improve signal integrity for high-speed operation.
- Memory Reliability Features: Auto/self-refresh, PASR and temperature-aware refresh intervals help maintain data integrity across temperature extremes.
- Compact BGA Footprint: 84-ball BGA surface-mount package supports high-density PCB layouts while maintaining robust solder connectivity.
Why Choose M14D2561616A-2(2S)?
The M14D2561616A-2(2S) delivers a balanced combination of industrial temperature capability, JEDEC DDR2 compliance, and advanced signaling/features such as on-die termination and duty-cycle correction. Its 16M × 16 organization, 268.4 Mbit capacity, and flexible timing options make it suitable for embedded applications requiring predictable DDR2 memory behavior under challenging environmental conditions.
This device is well suited for designers seeking a surface-mount DDR2 memory solution with configurable latency, refresh management for high-temperature operation, and a compact 84-ball BGA package for dense board-level integration.
Request a quote or submit an inquiry to obtain pricing, lead time and availability for the M14D2561616A-2(2S).
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A