M14D5121632A-1.5BG2S

The M14D5121632A-1.5BG2S from ESMT is a DDR2 SDRAM device organized as 32M × 16, providing a 512Mbit-class memory solution (536.9 Mbit reported). It implements an internal pipelined double-data-rate architecture with on-chip DLL and differential clock inputs for synchronous high-speed data transfers up to 667 MHz (DDR2-1333 signaling).

Designed for systems that require JEDEC-standard DDR2 memory in a compact surface-mount package, this part offers low-voltage operation (VDD/VDDQ = 1.8V ±0.1V) and on-die features addressing signal integrity and refresh management for robust operation across the commercial temperature range.

Key Features

• Core / Memory Organization — 32M × 16 organization delivering a nominal 512Mbit-class capacity (536.9 Mbit listed); DDR2 SDRAM architecture with four internal banks.
• Performance — Supports up to 667 MHz clock (DDR2-1333 data rate for the -1.5BG2S variant). CAS Latency and additive latency options include multiple settings (CAS: 3–9; Additive: 0–7) and burst lengths of 4 or 8 to match timing and throughput requirements.
• Data Path and Timing — Bi-directional differential data strobe (DQS / DQS̅) with read edge-aligned and write center-aligned DQS behavior; data I/O transitions on both edges of DQS for DDR operation.
• Signal Integrity — On-die termination (ODT) with selectable values (50/75/150 Ω) and off-chip-driver (OCD) impedance adjustment to improve signal quality in board-level designs.
• Interface and Standards — JEDEC-standard DDR2 device with SSTL_18 interface and differential CLK / CLK̅ inputs; all inputs (except data & DM) sampled on the rising edge of CLK.
• Power — Low-voltage operation: VDD and VDDQ = 1.8V ±0.1V (operating range 1.7V–1.9V) for reduced power compared with legacy higher-voltage memories.
• Refresh and Self-Refresh — Auto and self-refresh support with JEDEC refresh cycles: 8192 cycles/64ms at 0°C–85°C and 8192 cycles/32ms at >85°C–95°C; options for Partial Array Self Refresh (PASR) and high-temperature self-refresh rate enable.
• Package and Mounting — Pb-free 84-ball FBGA (8 mm × 12.5 mm body) with 0.8 mm ball pitch and a maximum body thickness of 1.2 mm for the -1.5BG2S variant; surface-mount package suited to compact board designs.
• Operating Range & Qualification — Commercial grade operation from 0 °C to 95 °C and JEDEC qualification.

Typical Applications

• System Memory Modules — Intended for use as DDR2 system memory on PCBs requiring a 32M × 16 DDR2 SDRAM device operating up to 667 MHz.
• Compact Board-Level Designs — The 84-ball FBGA (8 × 12.5 mm, 1.2 mm body) package supports space-constrained layouts where a surface-mount DDR2 device is required.
• Low-Voltage Memory Interfaces — Suited for designs that use a 1.8V SSTL_18 memory interface and need JEDEC-standard DDR2 timing and signaling.
• Commercial-Temperature Equipment — Components and systems operating across the 0 °C to 95 °C range that require JEDEC-compliant refresh and self-refresh behavior.

Unique Advantages

• High data-rate DDR2 operation: 667 MHz clock capability (DDR2-1333) provides higher throughput within DDR2 signaling constraints.
• Flexible timing options: Wide range of CAS and additive latency settings plus burst length options enable tuning for system timing and performance trade-offs.
• On-die signal conditioning: Built-in ODT and OCD impedance adjustment improve board-level signal integrity and simplify termination design.
• Low-voltage operation: 1.8V nominal supply (1.7–1.9V range) reduces memory power compared with higher-voltage alternatives while maintaining JEDEC compatibility.
• Compact, assembly-ready package: 84-ball FBGA (0.8 mm pitch) provides a small footprint and surface-mount compatibility for modern PCB assemblies.
• JEDEC-qualified refresh management: Standard refresh timing and features like PASR and high-temperature self-refresh ensure predictable behavior over the commercial temperature range.

Why Choose M14D5121632A-1.5BG2S?

The M14D5121632A-1.5BG2S combines JEDEC-standard DDR2 architecture, a compact 84-ball FBGA footprint, and low-voltage (1.8V) operation to deliver a practical memory building block for systems requiring DDR2-class performance up to 667 MHz. On-die termination, OCD adjustment and flexible timing options make it straightforward to integrate and tune for a wide range of board designs.

This device is well suited to designers and procurement teams specifying commercial-grade DDR2 memory for compact, surface-mounted applications that need standardized signaling, refresh behavior, and a known operating temperature range. Its JEDEC compliance and documented timing options support predictable system integration and long-term supply planning.

Request a quote or submit an inquiry to purchase the M14D5121632A-1.5BG2S for your next design requiring compact, JEDEC-compliant DDR2 SDRAM at 667 MHz.