M14D5121632A-1.8BBG2S

The M14D5121632A-1.8BBG2S is a JEDEC‑standard DDR2 SDRAM device providing 536.9 Mbit of volatile memory organized as 32M × 16. It implements a pipelined double-data-rate architecture with on‑chip DLL and supports differential clock and DQS for double‑edge data transfers.

Specified for 533 MHz operation (DDR2‑1066 data rate) with a 1.8 V supply range (1.7 V–1.9 V), this surface‑mount 84‑FBGA (thin, 1.0 mm) device is designed for systems requiring compact, low‑voltage DDR2 memory with flexible timing and signal‑integrity features.

Key Features

• Memory Core & Organization 536.9 Mbit total capacity organized as 32M × 16 (8M × 16 × 4 banks), supporting quad‑bank operation.
• Performance & Timing 533 MHz clock frequency (DDR2‑1066 data rate), access time 15 ns and write cycle time 15 ns. Supported CAS latencies: 3–9 and additive latencies: 0–7; burst length selectable 4 or 8.
• Voltage & Power VDD / VDDQ = 1.8 V ±0.1 V (operating range 1.7 V–1.9 V) for low‑voltage DDR2 operation.
• Interface & Signaling SSTL_18 interface with differential clock inputs (CLK/CLK) and bi‑directional differential data strobe (DQS/ DQS). All inputs (except data & DM) are sampled on the rising edge of CLK; data I/O transitions on both edges of DQS.
• Signal Integrity & Memory Management On‑chip DLL, On‑Die‑Termination (ODT) selectable (50/75/150 Ω), Off‑Chip‑Driver (OCD) impedance adjustment, duty cycle corrector, and support for refresh modes including auto/self refresh and Partial Array Self Refresh (PASR).
• Reliability & Standards JEDEC qualification and RoHS compliance; refresh cycle parameters specified for temperature ranges up to 95 °C.
• Package & Environmental 84‑ball FBGA thin package (8 mm × 12.5 mm, 0.8 mm ball pitch, 1.0 mm max body thickness), surface‑mount, operating temperature 0 °C to 95 °C.

Unique Advantages

• Compact, low‑profile package: Thin 84‑FBGA (1.0 mm) provides high memory density with a small PCB footprint for space‑constrained designs.
• Low‑voltage operation: 1.8 V ±0.1 V supply range reduces system power compared with higher‑voltage memories while maintaining DDR2 performance.
• Flexible timing options: Wide CAS and additive latency settings plus selectable burst lengths enable designers to tune performance for specific system requirements.
• Built‑in signal integrity features: On‑Die‑Termination, OCD impedance adjustment and on‑chip DLL help simplify routing and timing closure in high‑speed DDR2 interfaces.
• Standards compliance: JEDEC qualification and SSTL_18 signaling support predictable integration into established DDR2 memory subsystems.
• Temperature and refresh management: Defined refresh intervals and high‑temperature self refresh support operation across the specified 0 °C to 95 °C range.

Why Choose M14D5121632A-1.8BBG2S?

The M14D5121632A-1.8BBG2S delivers a balanced DDR2 memory solution—combining 536.9 Mbit capacity, 533 MHz operation, flexible timing, and comprehensive signal‑integrity features in a thin 84‑FBGA package. Its JEDEC qualification, SSTL_18 interface, and low‑voltage 1.8 V operation make it suitable for designs that need compact DDR2 memory with configurable performance and reliable refresh behavior.

This part is well suited for engineers and procurement teams specifying standardized DDR2 memory where board space, low‑voltage operation, and robust timing/ODT features are key considerations. The combination of JEDEC compliance and on‑chip features supports straightforward integration into established DDR2 memory architectures.

Request a quote or submit an inquiry to discuss availability, pricing, and lead times for the M14D5121632A-1.8BBG2S. Our team can provide detailed ordering information and support for your design requirements.