M14D5121632A-1.8BG2M

512Mb DDR2 SDRAM
Part Description

DDR2 SDRAM 512Mbit (32M × 16) 533MHz 1.8V 84-FBGA

Quantity 1,191 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package84-FBGA (8x12.5)Memory FormatDRAMTechnologyDRAM
Memory Size512 MbitAccess Time15 nsGradeCommercial
Clock Frequency533 MHzVoltage1.7V ~ 1.9VMemory TypeVolatile
Operating Temperature0°C – 95°CWrite Cycle Time Word Page15 nsPackaging84-FBGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.28

Overview of M14D5121632A-1.8BG2M – DDR2 SDRAM 512Mbit (32M × 16) 533MHz 1.8V 84-FBGA

The M14D5121632A-1.8BG2M is a DDR2 SDRAM device organized as 32M × 16 for a total density of 536.9 Mbit. It implements a pipelined double-data-rate architecture with on-chip DLL and differential clock inputs, delivering DDR2-1066 operation at a maximum clock frequency of 533 MHz (DDR2 data rate).

Designed for surface-mount integration in an 84-ball FBGA (8 mm × 12.5 mm, 1.2 mm body height) and operating from a low-voltage 1.7 V–1.9 V supply range, the device targets systems requiring standard-compliant DDR2 memory with on-die termination, programmable latencies and standard JEDEC qualification.

Key Features

  • DDR2 Architecture  Pipelined double-data-rate SDRAM with two data transfers per clock cycle and an on-chip DLL for timing alignment.
  • Density & Organization  536.9 Mbit total capacity organized as 32M × 16 (DQ0–DQ15) to support 16-bit data buses.
  • Performance & Timing  Specified for 533 MHz clock frequency (DDR2-1066 data rate) with typical access and write cycle times of 15 ns.
  • Programmable Latencies & Bursts  Supports CAS latencies from 3 to 9 and additive latencies 0–7, with burst lengths of 4 or 8 and both sequential and interleave burst types.
  • Data Strobe & I/O  Bi-directional differential data strobe (DQS/ DQS) with read edge-aligned and write center-aligned DQS; separate data mask (DM) inputs for write masking.
  • On-Die Termination & OCD  On-Die-Termination (ODT) and off-chip-driver (OCD) impedance adjustment with selectable ODT resistances (50/75/150 Ω) for improved signal integrity.
  • Refresh & Self-Refresh  Standard JEDEC refresh options with 8192 cycles/64 ms at 0 °C–85 °C and 8192 cycles/32 ms at >85 °C–95 °C; supports auto and self refresh plus Partial Array Self Refresh (PASR).
  • Electrical & Interface  SSTL_18-compatible interface with VDD and VDDQ at 1.8 V ±0.1 V (operating supply 1.7 V–1.9 V); differential clock inputs (CLK/CLK).
  • Package & Mounting  84-ball FBGA package (8 mm × 12.5 mm, 1.2 mm body, 0.8 mm ball pitch), surface-mount mounting type, JEDEC-qualified variant.
  • Commercial Temperature & Environmental  Commercial operating temperature range 0 °C to 95 °C and RoHS-compliant construction.
  • Special Functions & Signal Integrity  Duty cycle corrector, high-temperature self refresh rate enable, and support for DLL alignment and differential clocks to aid reliable timing performance.

Typical Applications

  • Embedded memory subsystems  Provides DDR2-1066 class off-chip system memory where a 32M × 16 organization and 1.8 V supply are required.
  • Consumer and industrial electronics  Suitable for devices that integrate surface-mount 84-FBGA DDR2 memory operating across the 0 °C–95 °C commercial range.
  • Board-level memory expansion  Used in designs that need JEDEC-compliant DDR2 SDRAM with on-die termination and programmable CAS/additive latencies for platform tuning.

Unique Advantages

  • JEDEC-standard DDR2 compliance  Facilitates integration into systems designed for DDR2 SDRAM with defined timing, refresh and interface behaviors.
  • Flexible timing options  Wide CAS and additive latency selection along with burst length choices enable designers to match memory behavior to system timing requirements.
  • Signal integrity features  On-Die-Termination, OCD impedance adjustment and differential clock/DQS support help simplify routing and maintain signal quality at DDR2-1066 data rates.
  • Compact BGA footprint  84-ball FBGA (8 mm × 12.5 mm) allows high-density board layouts while providing the thermal and mechanical characteristics of a soldered BGA package.
  • Operational robustness  Supported auto/self-refresh modes and partial array self-refresh help maintain data retention across the specified commercial temperature range.
  • Regulatory & environmental readiness  RoHS-compliant construction supports environmental requirements in commercial product development.

Why Choose M14D5121632A-1.8BG2M?

The M14D5121632A-1.8BG2M delivers a standards-based DDR2 memory option with a 32M × 16 organization, 536.9 Mbit density and DDR2-1066-class operation at a 533 MHz clock. Its combination of programmable latencies, on-die termination and differential clocking addresses system timing and signal-integrity needs for commercial designs that require JEDEC-qualified DDR2 SDRAM.

This device is well suited to designers seeking a low-voltage (1.7 V–1.9 V) DDR2 memory component in a compact 84-FBGA package, offering features that aid board-level integration and timing tuning while maintaining standard refresh and self-refresh behaviors.

Request a quote or submit an inquiry to obtain pricing, availability and ordering information for the M14D5121632A-1.8BG2M. Our team can provide datasheet details and support for integrating this DDR2 SDRAM into your design cycle.

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