M14D5121632A-2.5BBG2M
| Part Description |
DDR2 SDRAM 512Mbit (32M × 16) 400MHz 1.8V 84‑FBGA Thin (1.0mm) |
|---|---|
| Quantity | 482 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 84-FBGA (8x12.5) Thin | Memory Format | DRAM | Technology | DRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 15 ns | Grade | Commercial | ||
| Clock Frequency | 400 MHz | Voltage | 1.7V ~ 1.9V | Memory Type | Volatile | ||
| Operating Temperature | 0°C – 95°C | Write Cycle Time Word Page | 15 ns | Packaging | 84-FBGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.28 |
Overview of M14D5121632A-2.5BBG2M – DDR2 SDRAM 512Mbit (32M × 16) 400MHz 1.8V 84‑FBGA Thin (1.0mm)
The M14D5121632A-2.5BBG2M is a 512 Mbit DDR2 SDRAM organized as 32M × 16 with a 400 MHz clock (DDR2-800) and 1.8 V nominal supply. It implements a pipelined double-data-rate architecture with on-chip DLL and differential clock inputs to support standard DDR2 timing and burst operations. Designed for surface-mount applications, the device is offered in a thin 84‑FBGA package (1.0 mm body height) and is JEDEC compliant.
Key Features
- Core & Architecture Internal pipelined DDR2 architecture with on-chip DLL, quad-bank operation and differential clock inputs for DDR2-800 performance.
- Memory Organization 32M × 16 organization delivering 512 Mbit density with burst length options of 4 or 8 and both sequential and interleave burst types.
- Timing Options Support for CAS latency settings (3–9) and additive latency (0–7); typical timing example for this ordering code is DDR2-800 (5-5-5).
- Data I/O and Strobes Bi-directional differential data strobe (DQS/ DQS¯) with edge-aligned READ and center-aligned WRITE timing; separate LDQS/UDQS groups for DQ0–DQ7 and DQ8–DQ15.
- On-Die Features On-die termination (ODT) with selectable values (50/75/150 Ω) and off-chip-driver (OCD) impedance adjustment to improve signal integrity.
- Refresh and Power Management Auto and self-refresh support, Partial Array Self Refresh (PASR) and high-temperature self-refresh modes; JEDEC refresh cycles specified (8192 cycles/64 ms at 0°C–85°C; 8192 cycles/32 ms at 85°C–95°C).
- Voltage and Interface Nominal VDD/VDDQ = 1.8 V (±0.1 V), operational supply range 1.7 V–1.9 V; SSTL_18-compatible interface.
- Package & Mounting 84‑ball FBGA thin package (8 × 12.5 mm footprint, 0.8 mm ball pitch, 1.0 mm max body height) for surface-mount assembly.
- Qualification & Compliance JEDEC standard DDR2 SDRAM design and RoHS compliant. Commercial grade operation.
Typical Applications
- DDR2 memory subsystems — Use where a 512 Mbit DDR2-800, 1.8 V component is required for system memory or local buffering.
- Compact BGA designs — Thin 84‑FBGA (1.0 mm) package suits densely populated PCBs and space‑constrained assemblies.
- Thermally demanding environments — Operates across a commercial temperature range of 0°C to 95°C with JEDEC-defined refresh behavior for higher-temperature operation.
Unique Advantages
- JEDEC-compliant DDR2 timing: Facilitates integration into standard DDR2 memory controllers with supported CAS and additive latency options.
- Flexible signal integrity controls: On-die termination and OCD impedance adjustment allow tuning of termination and drive strength for reliable high-speed signaling.
- Compact, thin FBGA package: 84‑ball FBGA (1.0 mm body) provides a small footprint and low profile for space-limited board designs.
- Standard 1.8 V operation: Compatibility with DDR2 power rails simplifies power supply design across the system.
- Built-in refresh and low-power modes: Auto/self-refresh and PASR support help manage standby power and memory retention across required temperature ranges.
Why Choose M14D5121632A-2.5BBG2M?
The M14D5121632A-2.5BBG2M delivers JEDEC-standard DDR2-800 performance in a 512 Mbit (32M × 16) configuration with a thin 84‑FBGA package suited to compact, surface-mount designs. Its combination of on-die termination, differential clocking, programmable timing options and defined refresh behavior provides predictable integration into DDR2 memory subsystems where 1.8 V operation and commercial temperature range are required.
This device is appropriate for designs that require standard DDR2 timing flexibility, signal-integrity controls, and a low-profile BGA package for dense PCB layouts. The JEDEC compliance and RoHS status support consistent manufacturing and environmental requirements.
Request a quote or submit a procurement inquiry today to evaluate M14D5121632A-2.5BBG2M for your next DDR2 memory design.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A