M14D5121632A-2.5BG2M

The M14D5121632A-2.5BG2M is a DDR2 SDRAM device in a 32M × 16 organization providing 512Mbit of system memory capacity. It implements a pipelined double-data-rate architecture with on-chip DLL and supports DDR2-800 operation (400 MHz clock) for high-throughput parallel memory interfaces.

Designed to JEDEC standards and offered in an 84-ball FBGA package, this device targets applications that require standard DDR2 memory performance with 1.8V supply operation and commercial temperature tolerance.

Key Features

• Core / Memory Architecture Internal pipelined double-data-rate architecture with quad-bank operation and two data accesses per clock cycle; supports burst lengths of 4 or 8 and burst types sequential and interleave.
• Performance & Timing Specified for 400 MHz clock (DDR2-800) operation with CAS latency options from 3 to 9 and additive latency options from 0 to 7; typical access and write-cycle timing values shown at 15 ns.
• Data I/O and Strobes Bi-directional differential data strobe (DQS / /DQS) with edge-aligned READ and center-aligned WRITE timing; DQS can be disabled for single-ended operation.
• Clocking and DLL Differential clock inputs (CLK and /CLK) with on-chip DLL to align DQ/DQS transitions to the system clock; includes duty cycle corrector for improved timing stability.
• On-Die Termination & OCD On-Die Termination (ODT) support and Off-Chip-Driver (OCD) impedance adjustment with selectable ODT resistance options (50 / 75 / 150 Ω) for improved signal integrity.
• Refresh and Power Management Auto and self-refresh support including High Temperature Self Refresh and Partial Array Self Refresh (PASR); refresh cycles specified at 8192 cycles/64 ms (0°C–85°C) and 8192 cycles/32 ms (85°C–95°C).
• Voltage & Interface SSTL_18 interface with supply voltage VDD = 1.8V ± 0.1V (operating range 1.7V–1.9V) and separate VDDQ/VDDL domains for DQ/DLL power management.
• Package & Temperature 84-ball FBGA package (8 mm × 12.5 mm) with a maximum body height option of 1.2 mm; commercial operating temperature range 0°C to 95°C and JEDEC qualification.

Typical Applications

• System Memory for DDR2-800 Designs Provides 512Mbit DDR2-800 (400 MHz) capacity for systems that require standard DDR2 SDRAM performance and parallel memory interfaces.
• Embedded and Industrial Equipment Suitable for embedded platforms operating at commercial temperatures that need JEDEC-standard DDR2 memory with on-die termination and refresh features.
• Consumer and Networking Devices Useful where a 32M × 16 DDR2 memory component is required to meet DDR2-800 timing profiles and standard 1.8V power rails.

Unique Advantages

• JEDEC-compliant DDR2 implementation Ensures standard DDR2 timing, command set, and refresh behavior for straightforward integration into established memory controllers.
• Flexible timing options Wide CAS latency (3–9) and additive latency range (0–7) let designers tune performance for system timing and throughput requirements.
• Signal integrity features On-Die Termination and OCD impedance adjustment (50/75/150 Ω) combined with differential clock and DQS support improve data reliability at high data rates.
• Power domain separation Dedicated VDDQ and VDDL supplies allow targeted power management for DQ and DLL circuits while maintaining standard 1.8V operation.
• Refresh and low-power modes Auto/self-refresh, PASR and High Temperature Self Refresh provide flexible power/retention options across the specified temperature range.

Why Choose M14D5121632A-2.5BG2M?

The M14D5121632A-2.5BG2M positions itself as a JEDEC-standard DDR2 SDRAM solution offering DDR2-800 performance in a compact 84-ball FBGA package. Its combination of on-die termination, differential signaling, and flexible latency settings enables reliable high-speed memory interfaces on 1.8V systems operating across a commercial temperature range.

This device is suited for designs and customers that require a proven DDR2 memory building block with configurable timing and signal-integrity options, providing predictable integration into existing DDR2 memory subsystems and long-term availability within the series.

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