M14D5121632A-2(2M)

The M14D5121632A-2(2M) is a DDR2 SDRAM device from ESMT designed for JEDEC-compliant DDR2 memory systems. It implements an internal pipelined double-data-rate architecture with differential data strobes and an on-chip DLL to align data and strobe timing.

This part is specified with a 1.8V nominal supply and a 400 MHz clock frequency, making it suitable for designs that require parallel DDR2 memory in an 84-ball BGA package and a commercial operating range.

Key Features

• Memory Type & Organization DDR2 SDRAM, volatile memory organized as 32M × 16 with a reported memory size of 536.9 Mbit and 4 internal banks.
• Supply & Interface VDD = 1.8V ±0.1V with VDDQ = 1.8V ±0.1V and an SSTL_18 interface; parallel memory interface with differential clock inputs (CLK, /CLK).
• Performance Clock frequency specified at 400 MHz and access/write cycle times of 15 ns.
• Data timing & Burst Bi-directional differential DQS (/DQS) with read edge-aligned and write center-aligned operation; burst length options of 4 and 8 and sequential/interleave burst types.
• Latency Options CAS latency selectable across multiple settings and additive latency options to match system timing requirements.
• On-die Features On-chip DLL, On-Die-Termination (ODT) and Off-Chip-Driver (OCD) impedance adjustment for improved signal integrity with selectable ODT values (50/75/150 Ω).
• Refresh & Self-Refresh Auto and self-refresh support with standard refresh cycles; temperature-dependent refresh rate (8192 cycles/64ms at 0°C–85°C, 8192 cycles/32ms at >85°C–95°C).
• Package & Mounting Surface-mount 84 Ball BGA package (0.8 mm ball pitch) designed for compact system integration.
• Qualification & Grade JEDEC qualification and commercial grade operation with an operating temperature range of 0°C to 95°C.

Typical Applications

• JEDEC DDR2 platforms — Use as system memory in designs that follow DDR2 JEDEC standards and require parallel DDR2 SDRAM.
• Compact BGA-based systems — Suitable for space-constrained boards that accept an 84 Ball BGA memory device.
• Commercial temperature designs — Deploy in commercial-grade electronics operating within 0°C to 95°C.

Unique Advantages

• JEDEC-compliant design: Ensures compatibility with DDR2 system architectures that follow JEDEC specifications.
• 1.8V nominal supply: Specified VDD and VDDQ of 1.8V ±0.1V to match 1.8V DDR2 system rails.
• Advanced signal control: On-chip DLL, ODT and OCD impedance adjustment help maintain signal quality across the memory interface.
• Flexible timing options: Multiple CAS and additive latency settings plus burst mode support allow tuning for different system timing requirements.
• Compact BGA packaging: 84 Ball BGA offers a small footprint mounting option for dense board layouts.
• Documented refresh behavior: Supported refresh intervals include temperature-dependent modes up to 95°C for reliable data retention.

Why Choose M14D5121632A-2(2M)?

The M14D5121632A-2(2M) provides a JEDEC-standard DDR2 SDRAM option with explicit timing and electrical specifications (1.8V VDD/VDDQ, 400 MHz clock, 15 ns access/write cycles) and on-die features such as DLL and ODT to address signal integrity needs. Its 84 Ball BGA package and commercial temperature range make it a practical choice for compact, JEDEC-compliant memory designs.

This device is suited to teams and procurement looking for a documented, JEDEC-qualified DDR2 memory component from ESMT that supports flexible timing configurations and on-die termination options for reliable interfacing in commercial applications.

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