M14D5121632A-2.5BG2S

512Mb DDR2 SDRAM
Part Description

DDR2 SDRAM 512Mbit 400MHz 1.8V 84-FBGA (1.2mm)

Quantity 862 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package84-FBGA (8x12.5)Memory FormatDRAMTechnologyDRAM
Memory Size512 MbitAccess Time15 nsGradeCommercial
Clock Frequency400 MHzVoltage1.7V ~ 1.9VMemory TypeVolatile
Operating Temperature0°C – 95°CWrite Cycle Time Word Page15 nsPackaging84-FBGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.28

Overview of M14D5121632A-2.5BG2S – DDR2 SDRAM 512Mbit 400MHz 1.8V 84-FBGA (1.2mm)

The M14D5121632A-2.5BG2S is a DDR2 SDRAM device with 536.9 Mbit density organized as 32M × 16. It implements an internal pipelined double-data-rate architecture and quad-bank operation to deliver two data accesses per clock cycle for systems that require parallel DDR2 memory.

Designed for 1.8 V operation (VDD = 1.8V ±0.1V) and JEDEC qualification, this device offers DDR2-800 performance at a 400 MHz clock rate in an 84-ball FBGA package (8 mm × 12.5 mm, A(max)=1.2 mm), and is RoHS compliant.

Key Features

  • Core architecture  Internal pipelined double-data-rate architecture with on-chip DLL and differential clock inputs (CLK / CLK̄) enabling two data transfers per clock cycle.
  • Memory size & organization  536.9 Mbit density organized as 32M × 16 (8M × 16 × 4 banks) supporting DDR2-800 operation for the -2.5BG2S option.
  • Performance & timing  400 MHz clock frequency with write cycle time and access time specified at 15 ns; supports CAS latency options 3–9 and additive latency 0–7, with burst length 4 or 8 and sequential/interleave burst types.
  • Power & voltage  Nominal supply VDD = 1.8V ±0.1V (device voltage supply range 1.7V–1.9V) with VDDQ supplied for DQ I/O and VDDL for DLL.
  • Interfaces & I/O  SSTL_18 interface with bi-directional differential data strobe (DQS / DQS̄) and data I/O transitions on both edges of DQS; separate DM inputs (LDM, UDM) for write masking.
  • Signal integrity & on-die features  On-Die Termination (ODT), Off-Chip-Driver (OCD) impedance adjustment, and selectable ODT impedances (50 / 75 / 150 Ω) to improve signal quality.
  • Refresh & power management  Auto and self-refresh support, Partial Array Self Refresh (PASR), high-temperature self-refresh rate enable, and defined refresh cycles for 0 °C–85 °C and 85 °C–95 °C ranges.
  • Package & environmental  84-ball FBGA (8 × 12.5 mm) with maximum body thickness 1.2 mm; RoHS compliant and commercial grade with operating temperature 0 °C to 95 °C.

Typical Applications

  • Memory subsystem designs  Use where a 536.9 Mbit, 32M × 16 DDR2 memory element is required to implement on-board DRAM capacity in parallel-interface systems.
  • Compact board-level implementations  84-FBGA (8 × 12.5 mm, 1.2 mm max) package fits space-constrained PCBs that need 1.8 V DDR2 memory.
  • Systems requiring JEDEC-qualified DDR2  Suitable for designs that require JEDEC-standard DDR2 SDRAM timing, refresh behavior, and SSTL_18 interface characteristics.

Unique Advantages

  • High-density DDR2 memory: 536.9 Mbit capacity (32M × 16) provides significant on-board memory in a single device.
  • Flexible timing options: Supports a wide range of CAS latencies (3–9) and additive latencies (0–7) to match system timing requirements.
  • Signal integrity controls: On-Die Termination and OCD impedance adjustment with selectable ODT values (50/75/150 Ω) help manage I/O signaling on high-speed boards.
  • Low-voltage operation: 1.8 V nominal supply (1.7 V–1.9 V range) aligns with standard DDR2 power domains for consistent system integration.
  • Compact, production-ready package: 84-ball FBGA (8 × 12.5 mm, A(max)=1.2 mm) provides a small footprint and is supplied RoHS compliant for modern production flows.
  • JEDEC qualification: JEDEC-standard DDR2 features and defined refresh behavior simplify qualification and system validation.

Why Choose M14D5121632A-2.5BG2S?

The M14D5121632A-2.5BG2S delivers JEDEC-standard DDR2 performance at DDR2-800 (400 MHz) in a compact 84-FBGA package, combining a 536.9 Mbit density with flexible timing and on-die signal-integrity features. Its 1.8 V supply range, ODT options, and comprehensive refresh and self-refresh capabilities make it suitable for designs that require standard DDR2 behavior and controlled I/O signaling.

This device is appropriate for engineers and procurement teams specifying board-level DDR2 memory where verified JEDEC compliance, compact packaging, and configurable timing and termination are required. Its RoHS compliance and commercial-grade operating range (0 °C to 95 °C) support production deployment in a variety of standard environments.

Request a quote or submit an inquiry to receive pricing, availability, and technical support for the M14D5121632A-2.5BG2S DDR2 SDRAM. Our team will respond with ordering information and assistance for integration into your design.

Request a Quote

















    No file selected



    Our team will respond within 24 hours.


    I agree to receive newsletters and promotional emails. I can unsubscribe at any time.

    Certifications and Membership
    NQA AS9100 CMYK ANAB
    NQA AS9100 ANAB Badge
    ESD2020 Badge
    ESD2020 Association Badge
    GIDEP Badge
    GIDEP Badge
    Suntsu ERAI MemberVerification
    Suntsu ERAI Member Verification
    Available Shipping Methods
    FedEx
    UPS
    DHL
    Accepted Payment Methods
    American Express
    American Express
    Discover
    Discover
    MasterCard
    MasterCard
    Visa
    Visa
    UnionPay
    UnionPay

    Date Founded: 1998


    Headquarters: Hsinchu Science Park, Hsinchu, Taiwan


    Employees: 400+


    Revenue: $377.8 Million


    Certifications and Memberships: N/A


    Featured Products
    Latest News
    keyboard_arrow_up