M14D5121632A-2.5BG2S
| Part Description |
DDR2 SDRAM 512Mbit 400MHz 1.8V 84-FBGA (1.2mm) |
|---|---|
| Quantity | 862 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 84-FBGA (8x12.5) | Memory Format | DRAM | Technology | DRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 15 ns | Grade | Commercial | ||
| Clock Frequency | 400 MHz | Voltage | 1.7V ~ 1.9V | Memory Type | Volatile | ||
| Operating Temperature | 0°C – 95°C | Write Cycle Time Word Page | 15 ns | Packaging | 84-FBGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.28 |
Overview of M14D5121632A-2.5BG2S – DDR2 SDRAM 512Mbit 400MHz 1.8V 84-FBGA (1.2mm)
The M14D5121632A-2.5BG2S is a DDR2 SDRAM device with 536.9 Mbit density organized as 32M × 16. It implements an internal pipelined double-data-rate architecture and quad-bank operation to deliver two data accesses per clock cycle for systems that require parallel DDR2 memory.
Designed for 1.8 V operation (VDD = 1.8V ±0.1V) and JEDEC qualification, this device offers DDR2-800 performance at a 400 MHz clock rate in an 84-ball FBGA package (8 mm × 12.5 mm, A(max)=1.2 mm), and is RoHS compliant.
Key Features
- Core architecture Internal pipelined double-data-rate architecture with on-chip DLL and differential clock inputs (CLK / CLK̄) enabling two data transfers per clock cycle.
- Memory size & organization 536.9 Mbit density organized as 32M × 16 (8M × 16 × 4 banks) supporting DDR2-800 operation for the -2.5BG2S option.
- Performance & timing 400 MHz clock frequency with write cycle time and access time specified at 15 ns; supports CAS latency options 3–9 and additive latency 0–7, with burst length 4 or 8 and sequential/interleave burst types.
- Power & voltage Nominal supply VDD = 1.8V ±0.1V (device voltage supply range 1.7V–1.9V) with VDDQ supplied for DQ I/O and VDDL for DLL.
- Interfaces & I/O SSTL_18 interface with bi-directional differential data strobe (DQS / DQS̄) and data I/O transitions on both edges of DQS; separate DM inputs (LDM, UDM) for write masking.
- Signal integrity & on-die features On-Die Termination (ODT), Off-Chip-Driver (OCD) impedance adjustment, and selectable ODT impedances (50 / 75 / 150 Ω) to improve signal quality.
- Refresh & power management Auto and self-refresh support, Partial Array Self Refresh (PASR), high-temperature self-refresh rate enable, and defined refresh cycles for 0 °C–85 °C and 85 °C–95 °C ranges.
- Package & environmental 84-ball FBGA (8 × 12.5 mm) with maximum body thickness 1.2 mm; RoHS compliant and commercial grade with operating temperature 0 °C to 95 °C.
Typical Applications
- Memory subsystem designs Use where a 536.9 Mbit, 32M × 16 DDR2 memory element is required to implement on-board DRAM capacity in parallel-interface systems.
- Compact board-level implementations 84-FBGA (8 × 12.5 mm, 1.2 mm max) package fits space-constrained PCBs that need 1.8 V DDR2 memory.
- Systems requiring JEDEC-qualified DDR2 Suitable for designs that require JEDEC-standard DDR2 SDRAM timing, refresh behavior, and SSTL_18 interface characteristics.
Unique Advantages
- High-density DDR2 memory: 536.9 Mbit capacity (32M × 16) provides significant on-board memory in a single device.
- Flexible timing options: Supports a wide range of CAS latencies (3–9) and additive latencies (0–7) to match system timing requirements.
- Signal integrity controls: On-Die Termination and OCD impedance adjustment with selectable ODT values (50/75/150 Ω) help manage I/O signaling on high-speed boards.
- Low-voltage operation: 1.8 V nominal supply (1.7 V–1.9 V range) aligns with standard DDR2 power domains for consistent system integration.
- Compact, production-ready package: 84-ball FBGA (8 × 12.5 mm, A(max)=1.2 mm) provides a small footprint and is supplied RoHS compliant for modern production flows.
- JEDEC qualification: JEDEC-standard DDR2 features and defined refresh behavior simplify qualification and system validation.
Why Choose M14D5121632A-2.5BG2S?
The M14D5121632A-2.5BG2S delivers JEDEC-standard DDR2 performance at DDR2-800 (400 MHz) in a compact 84-FBGA package, combining a 536.9 Mbit density with flexible timing and on-die signal-integrity features. Its 1.8 V supply range, ODT options, and comprehensive refresh and self-refresh capabilities make it suitable for designs that require standard DDR2 behavior and controlled I/O signaling.
This device is appropriate for engineers and procurement teams specifying board-level DDR2 memory where verified JEDEC compliance, compact packaging, and configurable timing and termination are required. Its RoHS compliance and commercial-grade operating range (0 °C to 95 °C) support production deployment in a variety of standard environments.
Request a quote or submit an inquiry to receive pricing, availability, and technical support for the M14D5121632A-2.5BG2S DDR2 SDRAM. Our team will respond with ordering information and assistance for integration into your design.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
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