M14F2561616A-1.8BG2C

256Mb DDR2 SDRAM
Part Description

DDR2 SDRAM 256Mbit (16M × 16) 533MHz 1.5V 84-FBGA

Quantity 1,747 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package84-FBGA (8x12.5)Memory FormatDRAMTechnologyDRAM
Memory Size256 MbitAccess Time15 nsGradeCommercial
Clock Frequency533 MHzVoltage1.425V ~ 1.575VMemory TypeVolatile
Operating Temperature0°C – 95°CWrite Cycle Time Word Page15 nsPackaging84-FBGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.24

Overview of M14F2561616A-1.8BG2C – DDR2 SDRAM 256Mbit (16M × 16) 533MHz 1.5V 84-FBGA

The M14F2561616A-1.8BG2C from ESMT is a DDR2 SDRAM device organized as 16M × 16 (256Mbit) that supports a 533 MHz clock (DDR2-1066 data rate). It implements an internal pipelined double-data-rate architecture with differential clock inputs and an on-chip DLL for timing alignment.

Designed for commercial applications, this surface-mount DRAM delivers parallel memory interface operation with flexible latency and burst options, making it suitable for systems that require standard JEDEC DDR2 memory functionality in a compact 84-ball FBGA package.

Key Features

  • Core & architecture  Internal pipelined double-data-rate architecture providing two data accesses per clock cycle; on-chip DLL for DQ/DQS alignment and differential clock inputs (CLK / CLK¯).
  • Memory organization  16M × 16 organization (256Mbit nominal) with 4 banks and 1KB page size; parallel memory interface.
  • Performance & timing  533 MHz clock (DDR2-1066 data rate), typical access time 15 ns and write cycle time (word page) 15 ns; supported CAS latencies 3–9 and additive latencies 0–7; burst lengths 4 and 8 with sequential and interleave burst types.
  • Power & voltage  VDD / VDDQ = 1.5 V ±0.075 V (operating range 1.425 V to 1.575 V).
  • Signal integrity & interface  Bi-directional differential data strobe (DQS / DQS¯) with edge-aligned READ and center-aligned WRITE, data mask (DM) for write masking, On-Die Termination (ODT) with selectable 50/75/150 Ω, and off-chip-driver (OCD) impedance adjustment. Duty Cycle Corrector (DCC) supported.
  • Refresh & reliability features  Auto and self refresh, Partial Array Self Refresh (PASR), high-temperature self-refresh rate option; refresh modes include 8192 cycles/64 ms (0 °C to 85 °C) and 8192 cycles/32 ms (85 °C to 95 °C).
  • Package & mounting  84-ball FBGA surface-mount package (8.0 mm × 12.5 mm × 1.2 mm body, 0.8 mm ball pitch).
  • Operating range & compliance  Commercial grade operation from 0 °C to 95 °C; JEDEC qualification and RoHS compliant.

Typical Applications

  • Consumer Electronics  System memory and buffering in consumer devices that require JEDEC-standard DDR2 SDRAM with compact BGA packaging.
  • Networking & Communications  Packet buffering and temporary data storage where parallel DDR2 memory and fast read/write cycles are required.
  • Embedded Systems  On-board DRAM for embedded platforms using a parallel DDR2 interface and flexible latency/burst configurations.
  • Industrial Equipment  Commercial-temperature industrial applications that need JEDEC-compliant DDR2 memory operating up to 95 °C.

Unique Advantages

  • High-bandwidth DDR2 interface: Enables two data transfers per clock cycle at a 533 MHz clock for DDR2-1066 operation.
  • Flexible timing options: Wide CAS latency (3–9) and additive latency (0–7) choices allow tuning for system timing and performance trade-offs.
  • Enhanced signal quality: Differential clocks, DQS strobes with defined alignment, ODT and OCD impedance adjustment improve signal integrity on high-speed interfaces.
  • Robust refresh management: Auto/self refresh, PASR and high-temperature self-refresh options provide adaptable refresh strategies for varying thermal conditions.
  • Compact, surface-mount BGA: 84-FBGA package (8 × 12.5 mm) minimizes board area while providing a standard mounting footprint.
  • Standards and environmental compliance: JEDEC-qualified design and RoHS compliance for predictable integration and regulatory alignment.

Why Choose M14F2561616A-1.8BG2C?

The M14F2561616A-1.8BG2C positions itself as a JEDEC-compliant DDR2 SDRAM option that balances high-speed DDR2-1066 data capability with flexible timing and signal-integrity features. Its on-chip DLL, differential clocking, DQS management and ODT/OCD options make it suitable for systems that need predictable, standard DDR2 behavior in a compact FBGA package.

This part is well suited for engineers and procurement teams designing commercial-temperature embedded, networking, consumer, or industrial systems that require a proven DDR2 memory building block with JEDEC qualification, RoHS compliance, and a compact surface-mount package.

Request a quote or submit an inquiry for pricing, availability, and technical support for the M14F2561616A-1.8BG2C. Our team can provide lead-time and ordering information tailored to your project needs.

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