M14F2561616A-2.5BG2C

The M14F2561616A-2.5BG2C from ESMT is a DDR II SDRAM device organized as 16M × 16, marketed as a 256Mbit density for commercial applications. It implements an internal pipelined double-data-rate architecture with differential clock and data strobe signaling to support high-throughput parallel memory interfaces.

Designed for board-level integration, the device targets commercial systems that require DDR2-800 (400 MHz clock) operation at a 1.5V nominal supply and is supplied in an 84-ball FBGA (8 mm × 12.5 mm) surface-mount package with an operating range of 0 °C to 95 °C.

Key Features

• Memory Organization  16M × 16 organization (marketed as 256Mbit); datasheet notes a memory size value of 268.4 Mbit. Supports parallel memory interface and standard DRAM operation.
• DDR II Architecture  Internal pipelined double-data-rate design with two data accesses per clock cycle and differential clock inputs for synchronized high-speed operation.
• Performance  400 MHz clock frequency (DDR2-800 data rate) with typical access and write cycle times of 15 ns; CAS latency options and timing flexibility are supported.
• JEDEC Standard Compliance  JEDEC-standard DDR2 feature set for predictable system behavior and interoperability within JEDEC-defined DDR2 ecosystems.
• Advanced I/O and Timing  Bi-directional differential data strobe (DQS/ /DQS) with edge/center alignment (read/write), on-chip DLL, and duty cycle corrector (DCC) to align DQ/DQS with CLK.
• Latency and Burst Modes  CAS Latency selectable across multiple values (3–9) and additive latency options (0–7). Supports sequential and interleaved burst types with burst lengths of 4 and 8.
• Signal Integrity and Drive  On-Die Termination (ODT) support with selectable impedances and Off-Chip-Driver (OCD) impedance adjustment for improved signal quality.
• Power and Supply  VDD / VDDQ = 1.5 V nominal with an allowed supply range of 1.425 V to 1.575 V for stable low-voltage DDR2 operation.
• Refresh and Self-Refresh  Auto and self refresh support, including Partial Array Self Refresh (PASR) and high-temperature self-refresh rate enable; refresh cycle parameters are documented for operating temperature ranges.
• Package and Mounting  84-ball FBGA (8 mm × 12.5 mm, 0.8 mm ball pitch) surface-mount package optimized for compact board-level integration in commercial designs.
• Environmental and Qualification  Commercial grade device, JEDEC qualification, and RoHS compliance for standard commercial product lifecycles and environmental requirements.

Typical Applications

• Commercial embedded systems  Use as a compact DDR2 memory component where 256Mbit density and DDR2-800 throughput are required.
• Board-level memory expansion  Integration on PCBs using an 84-ball FBGA footprint for space-constrained designs that require parallel DDR2 memory interfaces.
• High-throughput buffering  Local data buffering in commercial networking or multimedia subsystems that leverage DDR2 double-data-rate transfers and selectable latency modes.

Unique Advantages

• Flexible timing options  Multiple CAS latency and additive latency settings enable designers to tune performance to system timing requirements.
• Robust signal management  On-die termination, selectable ODT resistances, and OCD impedance adjustment improve signal integrity in high-speed DDR2 designs.
• Low-voltage DDR2 operation  Nominal 1.5 V supply with a defined operating range (1.425 V–1.575 V) for reduced power compared with legacy higher-voltage memories.
• Compact, board-friendly package  84-FBGA package (8 mm × 12.5 mm) enables high-density mounting while preserving routing flexibility on multi-layer PCBs.
• JEDEC-based design  Compliance with JEDEC DDR2 standards simplifies qualification and system integration in commercial product lines.
• Thermal range for commercial use  0 °C to 95 °C operating range accommodates a wide range of commercial environments and deployment scenarios.

Why Choose M14F2561616A-2.5BG2C?

The M14F2561616A-2.5BG2C balances DDR2-800 performance, JEDEC-standard features, and compact FBGA packaging for commercial designs that require a reliable, parallel DDR2 memory solution. Its flexible timing options, on-die termination features, and differential clock/DQS architecture make it suitable for systems needing predictable, high-speed memory transfers at a 1.5 V supply.

This device is aimed at designers and procurement teams building commercial embedded systems, board-level memory subsystems, or buffering stages that demand DDR2 throughput in a small footprint, backed by ESMT’s DDR2 design and documented device specifications.

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