M15F1G1664A-2400(2S)
| Part Description |
DDRIII SDRAM 1.5V |
|---|---|
| Quantity | 743 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 96 BAll BGA | Memory Format | DRAM | Technology | DDR3 SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 1 Gbit | Access Time | 13.91 ns | Grade | Commercial | ||
| Clock Frequency | 1.2 GHz | Voltage | 1.5V | Memory Type | Volatile | ||
| Operating Temperature | 0°C – 85°C | Write Cycle Time Word Page | 15 ns | Packaging | 96 BAll BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 64M x 16 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.32 |
Overview of M15F1G1664A-2400(2S) – DDRIII SDRAM 1.5V
The M15F1G1664A-2400(2S) is a 1.074 Gbit DDR3 SDRAM device from ESMT designed for synchronous, high-speed volatile memory applications. It implements an eight-bank DDR3 architecture with source-synchronous data strobes and differential clocking to support double-data-rate transfers.
This commercial-grade memory device targets general high-speed memory applications that require programmable timing, JEDEC compliance, and a compact 96-ball BGA surface-mount package operating from a 1.5V supply.
Key Features
- Memory Organization and Capacity 1.074 Gbit DDR3 SDRAM, internally configured as 8M × 16 I/Os × 8 banks to provide the equivalent organization for high-density system memory.
- High-Speed DDR3 Interface Supports DDR3 operation up to DDR3-2400 (max frequency 1.2 GHz / 1200 MHz) with double-data-rate transfers on DQ, DQS and DM lines.
- Timing and Performance Access time of 13.91 ns and a write cycle time (word page) of 15 ns; programmable CAS and write latencies and a range of timing options for system tuning.
- Programmable Functions CAS Latency (6–14), CAS Write Latency (5–10), additive latency options, multiple write-recovery times, selectable burst type/length, configurable output driver impedance and on‑die termination settings.
- Signal and Data Integrity Differential clock (CK/CK) and differential data strobe (DQS/DQS) with 8n prefetch architecture, ZQ calibration for impedance accuracy, and configurable on-die termination for signal optimization.
- Power and Refresh Modes Single 1.5V supply (VDD/VDDQ = 1.5V ±0.075V), auto-refresh and self-refresh modes, partial array self-refresh (PASR), and power-down modes to support power management strategies.
- Package and Mounting Surface-mount 96-ball BGA package suitable for compact board designs; commercial operating temperature range 0°C to 85°C.
- Standards and Compliance JEDEC DDR3 compliant and RoHS compliant.
- Operational Note Write with Auto Precharge is not supported for the 2400 Mbps data rate.
Typical Applications
- General high-speed memory systems Use as a synchronous DDR3 SDRAM component where DDR3-2400-class data rates and 1.5V operation are required.
- System designs requiring programmable timing Suitable for designs that need flexible CAS/write latencies and configurable on-die termination for timing optimization.
- Compact, surface-mount designs The 96-ball BGA package supports space-constrained PCBs that require commercial-grade memory components operating between 0°C and 85°C.
Unique Advantages
- High data throughput: Capable of DDR3-2400 operation (1.2 GHz), enabling double-data-rate transfers on data and strobe lines.
- Flexible timing and tuning: Wide ranges for CAS latency, write latency and write recovery time let designers tune performance for target system timings.
- Robust signal control: Differential CK/CK and DQS/DQS with configurable on-die termination and ZQ calibration improve signal integrity and impedance accuracy.
- Power-mode versatility: Auto-refresh, self-refresh, PASR and power-down modes support power-optimized runtime behavior under a 1.5V supply.
- JEDEC and RoHS compliance: Designed to JEDEC DDR3 standards and RoHS-compliant for predictable integration and regulatory conformance.
- Compact BGA footprint: 96-ball BGA surface-mount package simplifies board integration for space-limited designs.
Why Choose M15F1G1664A-2400(2S)?
The M15F1G1664A-2400(2S) delivers DDR3-class performance with programmable timing, differential source-synchronous interfaces, and JEDEC compliance—making it a practical choice for commercial systems requiring reliable, high-speed volatile memory. Its 1.5V operation, signal integrity features (ZQ calibration, configurable ODT) and power management modes help balance performance and power for a range of general applications.
As a compact 96-ball BGA surface-mount device manufactured by ESMT and rated for commercial temperatures (0°C to 85°C), it is well suited for designers who need a verified DDR3 memory component with flexible timing options and industry-standard compliance.
Request a quote or submit an inquiry to purchase M15F1G1664A-2400(2S) and get specification assistance for your design integration and volume needs.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
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