M15F1G1664A-EFBG2S

The M15F1G1664A-EFBG2S is a 1.074 Gbit DDR3 SDRAM device organized as 64M × 16 with an eight-bank architecture. It implements DDR3 double-data-rate operation and supports data rates up to DDR3-2133 (1,066 MHz clock / 2,133 Mb/sec per pin) for general applications.

Designed for board-level integration, this JEDEC-compliant, commercial-grade device operates from a 1.5 V supply and is supplied in a 96 Ball BGA surface-mount package, supporting common DDR3 system power-saving and signal-integrity features.

Key Features

• Core / Memory Architecture 1Gb DDR3 SDRAM organized as 8Mbit × 16 I/Os × 8 banks with 8n prefetch architecture for double-data-rate transfers.
• Performance Supports up to 1.066 GHz clock frequency (DDR3-2133, 2,133 Mb/sec per pin) and lists access time of 13.91 ns with a write cycle time (word/page) of 15 ns.
• Interface Synchronous DDR3 interface with differential clock (CK/CK) and data strobe (DQS/DQS) signals; parallel DQ interface and source-synchronous DQS alignment.
• Programmability & Timing Configurable CAS latency and other timing parameters (multiple CL and CWL options, additive latency, write recovery settings, burst length/type) to match system timing requirements.
• Power & Low-Power Modes Operates from VDD/VDDQ = 1.5 V ±0.075 V and supports Auto Refresh, Self Refresh, Partial Array Self Refresh (PASR), and Power Down modes for lower standby consumption.
• Signal Integrity & Calibration Configurable output driver impedance (DS), on-die termination (RTT_Nom, RTT_WR), ZQ calibration via external ZQ pad, plus write and read leveling support for reliable timing alignment.
• Package & Mounting 96 Ball BGA package, surface mount format suitable for compact board-level memory designs; commercial operating temperature range 0 °C to 85 °C.
• Compliance & Environmental JEDEC DDR3 compliant and RoHS compliant (Pb-free).

Typical Applications

• General-purpose system memory — Provides high-speed DDR3-2133 memory density for systems requiring 1Gb devices in a 96 Ball BGA footprint.
• High-speed buffering and data transfer — Double-data-rate operation and DQS-aligned I/Os support high-throughput data paths up to 2,133 Mb/sec per pin for general applications.
• Board-level memory integration — Surface-mount 96 Ball BGA package enables compact integration on designs that require JEDEC-compliant DDR3 memory modules.

Unique Advantages

• High data-rate capability: Supports DDR3-2133 (1,066 MHz clock) enabling up to 2,133 Mb/sec per pin for demanding general applications.
• Flexible timing configuration: Programmable CAS latency, CAS write latency, additive latency, and multiple write-recovery and burst options allow tuning to system timing needs.
• Signal and impedance control: Configurable DS and on-die termination options plus ZQ calibration improve signal integrity and system interoperability.
• Power management features: Auto Refresh, Self Refresh, PASR and Power Down modes reduce active and standby power in systems operating from a 1.5 V supply.
• Compact BGA package: 96 Ball BGA surface-mount format simplifies board-level placement while delivering 1Gb density.
• Standards compliance and environmental readiness: JEDEC DDR3 compliance and RoHS Pb-free status support common industry requirements.

Why Choose M15F1G1664A-EFBG2S?

The M15F1G1664A-EFBG2S offers a JEDEC-compliant DDR3 memory building block that balances high data-rate performance, flexible timing programmability, and board-level integration in a 96 Ball BGA package. Its 1.5 V supply, on-die termination and calibration features, and multiple low-power modes make it suitable for designs that require compact 1Gb DDR3 memory with configurable signal and timing behavior.

This device is positioned for designers and engineers implementing general-purpose DDR3 memory subsystems who need verified JEDEC behavior, density of 64M × 16 organization, and the option to tune timing, termination, and power modes to match system requirements.

Request a quote or submit an inquiry to receive pricing, lead-time, and availability for the M15F1G1664A-EFBG2S DDR3 SDRAM.