M15F1G1664A-GHBG2S

The M15F1G1664A-GHBG2S is a 1.074 Gbit DDR3 SDRAM device organized as 64M×16 with an internal eight-bank architecture. Designed for high‑speed double‑data‑rate operation, this device supports a 1.2 GHz clock (DDR3‑2400 data rate) and operates from a 1.5 V supply.

Its combination of JEDEC DDR3 compliance, programmable timing options and a compact 96‑ball BGA surface‑mount package make it suitable for systems that require verified DDR3 performance within a commercial temperature range.

Key Features

• Core / Memory Architecture Internally configured as eight banks with 8n prefetch architecture; device organization is 64M × 16 providing a total capacity of 1.074 Gbit.
• High‑Speed Interface Differential clock (CK/CK) and differential data strobe (DQS/DQS); double‑data‑rate transfer on DQ, DQS and DM supporting DDR3‑2400 operation (1.2 GHz clock).
• Programmable Timing Supports multiple CAS latencies and programmable functions including CAS latency settings, CAS write latency, additive latency, and a range of write recovery times for flexible system timing.
• Signal Integrity & Calibration Configurable on‑die termination (RTT_Nom, RTT_WR), configurable driver strength (DS), and ZQ calibration for DS/ODT impedance accuracy via external ZQ pad.
• Power & Low‑Power Modes Operates from a 1.5 V supply (SSTL_15) with power saving features including auto refresh, self refresh, partial array self refresh (PASR) and power‑down modes.
• Performance Metrics Measured access time is 13.91 ns with a write cycle time (word page) of 15 ns, offering deterministic timing characteristics for system design.
• Package & Environmental Surface‑mount 96‑ball BGA package; commercial grade with operating temperature range 0 °C to 85 °C and RoHS compliance.

Typical Applications

• General-purpose high-speed memory Use where DDR3‑2400 performance and 1Gb density are required for system memory expansion.
• Synchronous memory subsystems Suitable for designs that require a DDR3 interface with differential clock and DQS timing synchronization.
• Compact, board‑level implementations The 96‑ball BGA surface‑mount package supports space‑efficient layouts in commercial electronic systems.

Unique Advantages

• Verified DDR3‑2400 performance: Specified for 1.2 GHz clock operation enabling DDR3‑2400 data rates per the ordering information and datasheet.
• Flexible timing configuration: Programmable CAS and write latencies plus additive latency options allow tuning to system timing and performance tradeoffs.
• Signal calibration and termination: On‑die termination options and ZQ calibration help achieve impedance accuracy and improved signal integrity.
• Low‑power operating modes: Multiple refresh and power‑down modes reduce standby power consumption while maintaining DDR3 feature compatibility.
• Compact BGA package: 96‑ball BGA surface‑mount package supports high‑density board designs and automated assembly.
• Standards compliance and environmental readiness: JEDEC DDR3 compliance and RoHS status support standard DDR3 system integration and regulatory requirements.

Why Choose M15F1G1664A-GHBG2S?

The M15F1G1664A-GHBG2S positions itself as a cost‑effective, JEDEC‑compliant DDR3 memory device that combines 1Gb density with up to DDR3‑2400 speed capability. Its programmable timing options, on‑die termination features and ZQ calibration provide designers with the controls necessary to tune performance and signal integrity for commercial systems.

This device is appropriate for designers and OEMs seeking a standardized DDR3 memory component in a compact 96‑ball BGA package, offering predictable timing (access time 13.91 ns, write cycle 15 ns), a 1.5 V supply requirement, and commercial temperature operation for broad system deployment.

Request a quote or submit an inquiry today to check availability and pricing for M15F1G1664A-GHBG2S and to discuss volume requirements or lead times.