M15T1G1664A-1866(2T)

The M15T1G1664A-1866(2T) is a 1.074 Gbit DDR3(L) SDRAM device from ESMT, organized as 64M × 16 with eight internal banks. It implements an 8n prefetch architecture and supports differential clock and data strobe signaling for double-data-rate transfer on DQs, DQS and DM, delivering a DDR3(L)-1866 data rate with a 933 MHz input clock frequency.

Designed for commercial-grade systems, the device is JEDEC DDR3(L) compliant and provides programmable timing, termination and power management features to integrate into high-performance memory subsystems requiring configurable latency, on-die termination and power-saving modes.

Key Features

• Memory Architecture  1.074 Gbit density organized as 64M × 16 with eight banks (8M × 16 × 8) and 8n prefetch architecture to support DDR3(L) operation.
• Performance  Up to 933 MHz input clock frequency delivering DDR3(L)-1866 data rate with example timing of 13-13-13 for the 1866 configuration; access time listed as 13.91 ns and write cycle time (word page) of 15 ns.
• Interface  Differential clock (CK/CK) and data strobe (DQS/DQS) with parallel memory interface and double-data-rate transfers on data and strobe signals (DQs, DQS and DM).
• Voltage Support  Supports SSTL_135 (VDD/VDDQ = 1.35V) and SSTL_15 (VDD/VDDQ = 1.5V) supply modes as defined in the datasheet.
• Programmable Timing and Modes  Multiple CAS latency options (6–14), CAS write latency options (5–10), additive latency choices and configurable burst length/type for system timing flexibility.
• Signal Integrity and Calibration  Configurable drive strength (DS), configurable on-die termination (RTT_Nom and RTT_WR), ZQ calibration for impedance accuracy and support for write leveling and read leveling (via MPR).
• Power Management  Auto Refresh, Self Refresh, Power Down Mode and Partial Array Self Refresh (PASR) are supported to reduce standby power.
• Package and Mounting  Surface-mount 96-ball BGA package for compact board-level integration.
• Reliability and Compliance  JEDEC DDR3(L) compliance and commercial-grade qualification with operating temperature range of 0 °C to 85 °C; RoHS compliant.

Unique Advantages

• JEDEC-compliant DDR3(L) implementation: Ensures predictable behavior and compatibility with systems designed to DDR3(L) standards.
• Flexible voltage support: SSTL_135 and SSTL_15 modes allow the device to operate at either 1.35V or 1.5V system signaling levels as required by target designs.
• Programmable timing and termination: Multiple CAS, CWL and ODT settings enable tuning for system timing, signal integrity and performance trade-offs.
• On-die calibration and leveling: ZQ calibration, read/write leveling and configurable drive strengths simplify system bring-up and improve memory interface robustness.
• Compact BGA footprint: 96-ball BGA surface-mount package reduces PCB area while providing a standard assembly form factor.
• Power-saving features: Self Refresh, PASR and Power Down modes help manage standby power in commercial systems.

Why Choose M15T1G1664A-1866(2T)?

The M15T1G1664A-1866(2T) positions itself as a configurable, JEDEC-compliant DDR3(L) SDRAM building block for commercial designs that require a 1.074 Gbit density, configurable timing and robust signal integrity controls. Its support for SSTL_135 and SSTL_15, together with programmable ODT, drive strength and leveling features, make it suitable for systems that need adaptable memory interface tuning.

With a compact 96-ball BGA package, RoHS compliance and an operating range of 0 °C to 85 °C, this device offers a balance of density, configurability and form-factor suited to mainstream memory subsystems where JEDEC DDR3(L) compatibility and proven features such as ZQ calibration and power-saving modes are required.

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