M15T1G1664A-DEBG2T
| Part Description |
DDR3L SDRAM 1.074 Gbit (64M × 16) 933 MHz, 96 Ball BGA |
|---|---|
| Quantity | 1,215 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 96 Ball BGA | Memory Format | DRAM | Technology | DDR3L | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 1 Gbit | Access Time | 13.91 ns | Grade | Commercial | ||
| Clock Frequency | 933 MHz | Voltage | 1.35V, 1.5V | Memory Type | Volatile | ||
| Operating Temperature | 0°C – 85°C | Write Cycle Time Word Page | 15 ns | Packaging | 96 Ball BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 64M x 16 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.32 |
Overview of M15T1G1664A-DEBG2T – DDR3L SDRAM 1.074 Gbit (64M × 16) 933 MHz, 96 Ball BGA
The M15T1G1664A-DEBG2T from ESMT is a DDR3(L) SDRAM device organized as 64M × 16 (1.074 Gbit) and specified for a 933 MHz clock frequency (DDR3(L)-1866 data rate). It implements DDR3(L) architecture with an 8n prefetch and differential clock/data strobe support to deliver double-data-rate transfers on DQ, DQS and DM lines.
Designed for commercial-grade JEDEC-compliant DDR3(L) systems, this surface-mount 96 Ball BGA part supports both 1.35 V and 1.5 V supplies and incorporates refresh, power-saving and signal-integrity features for integration into DDR3(L)-compatible designs.
Key Features
- Memory & Organization – 1.074 Gbit capacity arranged as 64M × 16 with 8 banks and 8n prefetch architecture.
- Performance – 933 MHz clock frequency corresponding to DDR3(L)-1866 data rate; access time listed as 13.91 ns and write cycle time (word/page) of 15 ns.
- Voltage & Low-Power Options – Supports SSTL_135 (VDD/VDDQ = 1.35 V) and SSTL_15 (VDD/VDDQ = 1.5 V) operation for flexible power choices.
- Interface & Timing – Differential clock (CK/CK) and DQS/DQS paths, double-data-rate transfers on DQs/DQS/DM, and programmable CAS latency and CAS write latency settings.
- Data Integrity & Refresh – Auto Refresh and Self Refresh modes with Partial Array Self Refresh (PASR) and self-refresh temperature range configuration.
- Signal Integrity & Calibration – Configurable drive strength (DS), configurable on-die termination (ODT) with multiple RTT_Nom and RTT_WR settings, and ZQ calibration (240 Ω ±1%) for impedance accuracy.
- Write/Read Leveling & Test – Write leveling via mode register settings and read leveling support via MPR functionality; includes MPR test modes.
- Programmable Functions – Wide range of programmable options including CAS latency (6–14), CAS write latency (5–10), additive latency options, burst type/length, write recovery times, and output driver impedance choices.
- Package & Temperature – Surface-mount 96 Ball BGA package; commercial-grade operating temperature range of 0 °C to 85 °C.
- Standards & Compliance – JEDEC DDR3(L) compliant and RoHS compliant.
Typical Applications
- Commercial embedded systems – DDR3(L)-compatible memory for commercial-grade designs requiring JEDEC-compliant DRAM in a compact BGA package.
- Memory modules and subsystems – Use as a building block in multi-device memory arrays and module designs leveraging programmable ODT and drive strength.
- Consumer and industrial electronics – Suitable for systems that require DDR3(L)-1866 data rate operation with selectable 1.35 V or 1.5 V supply options.
Unique Advantages
- Dual voltage support: Native support for 1.35 V and 1.5 V supplies enables design flexibility between lower-power and standard DDR3 rails.
- Programmability for system tuning: Extensive mode register options (CAS, CWL, AL, ODT, DS) allow designers to tune timing, drive strength and termination for system compatibility.
- Signal integrity controls: Configurable ODT values, output driver impedance options and ZQ calibration (240 Ω ±1%) help maintain impedance accuracy and signal quality.
- Power management features: Auto/self refresh, PASR and power-down modes reduce standby power and enable selective refresh strategies.
- JEDEC compliance: Designed to the DDR3(L) JEDEC standard for predictable interoperability in DDR3(L)-based systems.
- Compact BGA footprint: 96 Ball BGA surface-mount package supports high-density board integration for space-constrained designs.
Why Choose M15T1G1664A-DEBG2T?
The M15T1G1664A-DEBG2T combines JEDEC-compliant DDR3(L) architecture with flexible voltage operation (1.35 V / 1.5 V), programmable timing and termination settings, and on-die calibration to support reliable DDR3(L)-1866 operation in commercial designs. Its 96 Ball BGA package and comprehensive feature set make it suitable for engineers who need an industry-standard DDR3(L) DRAM building block with options for signal and power optimization.
Manufactured by ESMT and provided with an extensive set of programmable functions and refresh/power modes, this device is aimed at designers seeking a verifiable, configurable DDR3(L) memory component for integration into commercial-memory subsystems and embedded platforms.
Request a quote or contact sales to discuss availability, lead times and volume pricing for the M15T1G1664A-DEBG2T.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
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