M15T1G1664A-DEBG2T

1Gb DDR3L SDRAM
Part Description

DDR3L SDRAM 1.074 Gbit (64M × 16) 933 MHz, 96 Ball BGA

Quantity 1,215 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package96 Ball BGAMemory FormatDRAMTechnologyDDR3L
Memory Size1 GbitAccess Time13.91 nsGradeCommercial
Clock Frequency933 MHzVoltage1.35V, 1.5VMemory TypeVolatile
Operating Temperature0°C – 85°CWrite Cycle Time Word Page15 nsPackaging96 Ball BGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization64M x 16
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.32

Overview of M15T1G1664A-DEBG2T – DDR3L SDRAM 1.074 Gbit (64M × 16) 933 MHz, 96 Ball BGA

The M15T1G1664A-DEBG2T from ESMT is a DDR3(L) SDRAM device organized as 64M × 16 (1.074 Gbit) and specified for a 933 MHz clock frequency (DDR3(L)-1866 data rate). It implements DDR3(L) architecture with an 8n prefetch and differential clock/data strobe support to deliver double-data-rate transfers on DQ, DQS and DM lines.

Designed for commercial-grade JEDEC-compliant DDR3(L) systems, this surface-mount 96 Ball BGA part supports both 1.35 V and 1.5 V supplies and incorporates refresh, power-saving and signal-integrity features for integration into DDR3(L)-compatible designs.

Key Features

  • Memory & Organization – 1.074 Gbit capacity arranged as 64M × 16 with 8 banks and 8n prefetch architecture.
  • Performance – 933 MHz clock frequency corresponding to DDR3(L)-1866 data rate; access time listed as 13.91 ns and write cycle time (word/page) of 15 ns.
  • Voltage & Low-Power Options – Supports SSTL_135 (VDD/VDDQ = 1.35 V) and SSTL_15 (VDD/VDDQ = 1.5 V) operation for flexible power choices.
  • Interface & Timing – Differential clock (CK/CK) and DQS/DQS paths, double-data-rate transfers on DQs/DQS/DM, and programmable CAS latency and CAS write latency settings.
  • Data Integrity & Refresh – Auto Refresh and Self Refresh modes with Partial Array Self Refresh (PASR) and self-refresh temperature range configuration.
  • Signal Integrity & Calibration – Configurable drive strength (DS), configurable on-die termination (ODT) with multiple RTT_Nom and RTT_WR settings, and ZQ calibration (240 Ω ±1%) for impedance accuracy.
  • Write/Read Leveling & Test – Write leveling via mode register settings and read leveling support via MPR functionality; includes MPR test modes.
  • Programmable Functions – Wide range of programmable options including CAS latency (6–14), CAS write latency (5–10), additive latency options, burst type/length, write recovery times, and output driver impedance choices.
  • Package & Temperature – Surface-mount 96 Ball BGA package; commercial-grade operating temperature range of 0 °C to 85 °C.
  • Standards & Compliance – JEDEC DDR3(L) compliant and RoHS compliant.

Typical Applications

  • Commercial embedded systems – DDR3(L)-compatible memory for commercial-grade designs requiring JEDEC-compliant DRAM in a compact BGA package.
  • Memory modules and subsystems – Use as a building block in multi-device memory arrays and module designs leveraging programmable ODT and drive strength.
  • Consumer and industrial electronics – Suitable for systems that require DDR3(L)-1866 data rate operation with selectable 1.35 V or 1.5 V supply options.

Unique Advantages

  • Dual voltage support: Native support for 1.35 V and 1.5 V supplies enables design flexibility between lower-power and standard DDR3 rails.
  • Programmability for system tuning: Extensive mode register options (CAS, CWL, AL, ODT, DS) allow designers to tune timing, drive strength and termination for system compatibility.
  • Signal integrity controls: Configurable ODT values, output driver impedance options and ZQ calibration (240 Ω ±1%) help maintain impedance accuracy and signal quality.
  • Power management features: Auto/self refresh, PASR and power-down modes reduce standby power and enable selective refresh strategies.
  • JEDEC compliance: Designed to the DDR3(L) JEDEC standard for predictable interoperability in DDR3(L)-based systems.
  • Compact BGA footprint: 96 Ball BGA surface-mount package supports high-density board integration for space-constrained designs.

Why Choose M15T1G1664A-DEBG2T?

The M15T1G1664A-DEBG2T combines JEDEC-compliant DDR3(L) architecture with flexible voltage operation (1.35 V / 1.5 V), programmable timing and termination settings, and on-die calibration to support reliable DDR3(L)-1866 operation in commercial designs. Its 96 Ball BGA package and comprehensive feature set make it suitable for engineers who need an industry-standard DDR3(L) DRAM building block with options for signal and power optimization.

Manufactured by ESMT and provided with an extensive set of programmable functions and refresh/power modes, this device is aimed at designers seeking a verifiable, configurable DDR3(L) memory component for integration into commercial-memory subsystems and embedded platforms.

Request a quote or contact sales to discuss availability, lead times and volume pricing for the M15T1G1664A-DEBG2T.

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