M15T1G1664A-DEBG2S

The M15T1G1664A-DEBG2S is a 1.074 Gbit DDR3(L) SDRAM device organized as 64M × 16 with an eight‑bank architecture and double‑data‑rate operation. It delivers a clock frequency of 933 MHz (DDR3(L)-1866 data rate) and supports both 1.35 V and 1.5 V supply options.

This device is targeted at high‑performance synchronous memory implementations that require JEDEC DDR3(L) compliance, programmable timing configurations, and a compact 96‑ball BGA surface‑mount package with extended operating temperature capability.

Key Features

• Memory Architecture  1.074 Gbit density organized as 64M × 16 with eight internal banks and 8n prefetch architecture for DDR3(L) operation.
• Performance  Rated for a 933 MHz clock (DDR3(L)-1866) with access time of 13.91 ns and write cycle time (word/page) of 15 ns.
• Voltage and Power Options  Supports SSTL_135 and SSTL_15 interfaces with VDD/VDDQ = 1.35 V (± tolerances) or 1.5 V, and includes power saving modes such as Partial Array Self Refresh (PASR) and Power‑Down.
• JEDEC Compliance  Designed to meet JEDEC DDR3(L) SDRAM specifications for interoperability and standard timing/command behavior.
• Signal and Timing Control  Differential clock (CK/CK) and data strobe (DQS/DQS) with configurable On‑Die Termination (ODT), configurable driver strength (DS), ZQ calibration, and programmable CAS/Additive latencies and write recovery settings.
• Data Integrity and Refresh  Supports Auto Refresh and Self Refresh modes to maintain data integrity across operating states.
• Package and Mounting  96‑ball BGA surface‑mount package optimized for compact board layouts and high‑density memory integration.
• Operating Range & Compliance  RoHS compliant and specified for operation from −40°C to 105°C.

Typical Applications

• General high‑speed memory applications  Use where JEDEC DDR3(L) standard DDR memory is required for synchronous, high‑throughput data transfers.
• Low‑voltage DDR3(L) system designs  Suitable for designs that leverage 1.35 V or 1.5 V supply rails to balance power and performance.
• Compact, surface‑mount boards  Ideal for systems needing a small footprint memory package with BGA mounting and high pin‑count I/O.

Unique Advantages

• Flexible voltage operation: Dual support for 1.35 V and 1.5 V supplies enables designers to choose the optimal power/performance point.
• JEDEC compatibility: Standardized DDR3(L) compliance simplifies integration with existing DDR3 ecosystems and memory controllers.
• Programmable timing and leveling: Extensive MR options for CAS latency, additive latency, write recovery and read/write leveling allow system tuning across platforms.
• Advanced signal integrity features: Configurable ODT and DS plus ZQ calibration support robust timing margins and impedance matching in target systems.
• Compact BGA footprint: 96‑ball BGA supports high‑density PCB layouts while maintaining surface‑mount reliability.
• Wide temperature range: Rated from −40°C to 105°C for demanding environmental conditions.

Why Choose M15T1G1664A-DEBG2S?

The M15T1G1664A-DEBG2S positions itself as a standards‑based DDR3(L) memory device delivering a balanced combination of density, programmable timing, and signal integrity controls. Its JEDEC compliance and support for both 1.35 V and 1.5 V operation make it a versatile choice for designs that require conventional DDR3(L) interfaces and tuning flexibility.

This part is suitable for engineering teams focused on integrating a proven DDR3(L) SDRAM in compact BGA form factors, where predictable timing configuration, power‑saving modes, and industry standard signaling are required.

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