M15T1G1664A-EFBG2S

The M15T1G1664A-EFBG2S is a 1.074 Gbit DDR3(L) SDRAM device organized as 64M×16 with an eight-bank architecture. It supports double-data-rate transfers and is specified for operation at a 1.066 GHz clock frequency (DDR3(L)-2133 data rate), making it suitable for high-speed synchronous memory designs.

Designed for compact surface-mount implementations, this device provides industry-standard DDR3(L) features—programmable timing, differential clocking and DQS, power-saving modes, and configurable on-die termination—delivering integration and performance for systems that require standard-compliant DDR3(L) memory.

Key Features

• Memory Core & Organization 1.074 Gbit capacity organized as 64M×16 with eight internal banks and 8n prefetch architecture for high-throughput DDR operation.
• Data Rate & Timing Operates at a 1.066 GHz clock frequency supporting DDR3(L)-2133 (2133 Mb/sec/pin) with programmable CAS latencies and selectable burst lengths.
• Interface & Signaling Differential clock (CK/CK) and data strobe (DQS/DQS) with double-data-rate transfers on DQ, DQS and DM for source-synchronous data capture.
• Power Supply Options Supports SSTL_135 (VDD/VDDQ = 1.35V) and SSTL_15 (VDD/VDDQ = 1.5V) operation, enabling low-voltage system designs or legacy 1.5V rails.
• Power Management Auto Refresh, Self Refresh, Partial Array Self Refresh (PASR) and Power Down modes to reduce active and standby power consumption.
• Signal Integrity & Calibration Configurable drive strength (DS) and on-die termination (ODT) with ZQ calibration for accurate impedance control; write and read leveling support for system timing alignment.
• Programmable Operation Wide range of programmable functions including CAS Latency, CAS Write Latency, Additive Latency, Write Recovery Time and selectable RTT settings.
• Package & Mounting 96-ball BGA package designed for surface-mount assembly to support compact PCB layouts.
• Operating Range & Compliance Specified operating temperature from -40 °C to 105 °C and RoHS compliant. JEDEC DDR3(L) compliant signaling and functionality.

Typical Applications

• General High‑Speed Memory Systems Systems requiring DDR3(L)-2133 data rates and 1Gb density for synchronous memory buffering and data transfer.
• Embedded and Board‑Level Designs Surface-mount 96-ball BGA footprint and 64M×16 organization suit compact embedded memory implementations.
• Industrial Electronics Extended operating temperature range (−40 °C to 105 °C) and RoHS compliance support deployment in temperature‑challenging environments.
• JEDEC‑Compliant DDR3(L) Designs For systems that require standard DDR3(L) feature sets including differential clocking, DQS, and programmable timing.

Unique Advantages

• High Throughput: DDR3(L)-2133 capability (2133 Mb/sec/pin) combined with 8n prefetch architecture supports high-bandwidth memory demands.
• Flexible Voltage Support: Dual supply options (1.35V and 1.5V) allow designers to target low-voltage or legacy 1.5V systems without changing device selection.
• Robust Timing Control: Programmable CAS and write timing options provide design flexibility for meeting system latency and timing requirements.
• Signal Integrity Controls: Configurable DS and ODT plus ZQ calibration and leveling features help achieve reliable high-speed signal performance.
• Compact Surface‑Mount Package: 96-ball BGA offers a small PCB footprint while enabling the required I/O count for 16-bit data width implementations.
• Wide Operating Temperature: Rated from −40 °C to 105 °C to support designs operating across broad temperature ranges.

Why Choose M15T1G1664A-EFBG2S?

The M15T1G1664A-EFBG2S delivers a verified DDR3(L) SDRAM feature set with up to DDR3(L)-2133 throughput, dual-voltage support, and a compact 96-ball BGA package. Its programmable timing, on-die termination options, and calibration features give system designers practical controls for integrating high-speed memory into synchronous designs.

This device is suited to engineers and procurement teams specifying JEDEC-compliant DDR3(L) memory for compact board-level implementations where verified timing, configurable signal integrity, and a wide operating temperature range are important considerations for long-term deployment.

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