M15T1G1664A-EFBG2K

The M15T1G1664A-EFBG2K is a 1.074 Gbit DDR3L SDRAM device organized as 64M×16 and built on DDR3L technology. It provides a 1.066 GHz clock frequency with JEDEC qualification for system memory applications requiring high-speed, low-voltage DRAM.

Packaged in a 96 Ball BGA with surface-mount mounting, the device supports dual supply options (1.35V and 1.5V) and an operating temperature range from -40 °C to 105 °C, offering a compact solution for designs that require dense memory capacity and defined operating limits.

Key Features

• Memory Core  1.074 Gbit capacity organized as 64M×16, implemented as volatile DRAM using DDR3L technology.
• Performance  Supports a 1.066 GHz clock frequency with an access time of 13.91 ns and a write cycle time (word page) of 15 ns for responsive memory operations.
• Power  Dual supply support at 1.35V and 1.5V, enabling operation at standard DDR3L voltage levels.
• Interface  Parallel memory interface compatible with DDR3L SDRAM architectures.
• Package & Mounting  96 Ball BGA package in a surface-mount form factor for PCB space efficiency and assembly compatibility.
• Temperature Range  Rated for operation from -40 °C to 105 °C to accommodate a wide range of thermal environments.
• Qualification & Compliance  JEDEC qualification and RoHS compliance, supporting standard industry qualification and environmental requirements.

Typical Applications

• Embedded Memory  Acts as system DRAM where a 1Gb DDR3L device in a 64M×16 organization is required for runtime data storage.
• High-Speed Buffers  Provides fast-access buffering with a 1.066 GHz clock frequency and sub-16 ns write cycle timing.
• Compact Board Designs  96 Ball BGA package enables dense PCB layouts that integrate DRAM in space-constrained systems.

Unique Advantages

• High-density DDR3L capacity: 1.074 Gbit in a 64M×16 configuration delivers substantial on-board memory in a single device.
• Defined high-speed timing: 1.066 GHz clock frequency with 13.91 ns access time and 15 ns write cycle time for predictable performance.
• Flexible voltage operation: Supports both 1.35V and 1.5V supply options to match system power rails.
• Compact BGA footprint: 96 Ball BGA surface-mount package reduces board area and supports automated assembly.
• Wide operating range: Rated from -40 °C to 105 °C to meet designs that require extended temperature capability.
• Standards alignment: JEDEC qualification and RoHS compliance align the device with common industry requirements.

Why Choose M15T1G1664A-EFBG2K?

The M15T1G1664A-EFBG2K balances high-speed DDR3L performance with a compact 96 Ball BGA package and industry-standard qualification. Its 1.074 Gbit capacity, 1.066 GHz clock support, and defined timing characteristics make it suitable for designs that require predictable DRAM behavior and efficient board-level integration.

With dual-voltage support, JEDEC qualification, and RoHS compliance, this device offers a straightforward memory option for engineers and procurement teams seeking a verified DDR3L component with clear electrical and thermal limits.

Request a quote or submit an inquiry for pricing and availability of the M15T1G1664A-EFBG2K to move your design forward.