M15T1G1664A-EFBG2Z

The M15T1G1664A-EFBG2Z is a 1.074 Gbit DDR3L SDRAM organized as 64M × 16, implementing low-voltage DDR3L memory technology with a parallel memory interface. It delivers a clock frequency of 1.066 GHz and typical access timings suitable for applications that require high-speed volatile DRAM storage in a compact surface-mount package.

Engineered for commercial-grade systems, this device supports dual supply operation at 1.35 V and 1.5 V, JEDEC qualification, and an operating temperature range of 0 °C to 85 °C, making it appropriate for designs requiring standardized DDR3L memory performance and RoHS compliance.

Key Features

• Core Memory Architecture  1.074 Gbit DDR3L SDRAM organized as 64M × 16 for parallel memory access.
• Performance  1.066 GHz clock frequency with an access time of 13.91 ns and a write cycle time (word page) of 15 ns.
• Low-Voltage Operation  Supports both 1.35 V and 1.5 V supply options to match system power requirements and enable low-voltage designs.
• Standards and Qualification  JEDEC-qualified DDR3L device ensuring compliance with industry memory specifications.
• Package and Mounting  Available in a 96 Ball BGA package for surface-mount assembly, optimizing board footprint and routing.
• Environmental and Grade  Commercial-grade device with RoHS compliance and an operating temperature range of 0 °C to 85 °C.

Typical Applications

• Embedded systems  Use as system memory where a 1.074 Gbit DDR3L module with a parallel interface provides volatile storage for firmware and runtime data.
• Consumer and multimedia devices  Suitable for designs that require high-speed DRAM access at 1.066 GHz and low-voltage operation to manage power consumption.
• Networking and communications equipment  Provides buffer and working memory in commercial-grade network devices operating within 0 °C to 85 °C.

Unique Advantages

• Compact BGA package: The 96 Ball BGA provides a space-efficient surface-mount footprint for high-density board designs.
• Flexible voltage support: Dual 1.35 V and 1.5 V operation allows designers to match system power rails and optimize energy use.
• Predictable timing: Specified access time (13.91 ns) and write cycle time (15 ns) enable predictable memory performance planning.
• JEDEC qualification: Conformance to JEDEC standards simplifies integration into designs that require standardized DDR3L behavior.
• Commercial temperature range: Rated for 0 °C to 85 °C operation to support a broad set of commercial applications.
• RoHS compliant: Meets environmental lead-free requirements for regulatory and manufacturing compatibility.

Why Choose M15T1G1664A-EFBG2Z?

The M15T1G1664A-EFBG2Z positions itself as a compact, JEDEC-qualified DDR3L memory solution delivering 1.074 Gbit density with 1.066 GHz clock capability and defined timing parameters for reliable system performance. Its dual-voltage support and 96 Ball BGA surface-mount package make it well suited for commercial designs that need standardized DDR3L functionality in a small form factor.

This device is a practical choice for engineers and procurement teams designing commercial embedded, consumer, or networking products that require predictable DDR3L DRAM behavior, RoHS compliance, and operation across a 0 °C to 85 °C temperature range.

Request a quote or submit an inquiry for pricing and availability of the M15T1G1664A-EFBG2Z to evaluate it for your next design.