M15T2G16128A (2D)

The M15T2G16128A (2D) is a 2.147 Gbit DDR3(L) SDRAM device manufactured by ESMT, built on a double-data-rate architecture with an 8-bank internal organization (16M × 16 × 8 banks). It delivers JEDEC DDR3(L) compliant, high-speed synchronous memory operation supporting differential clocking and source-synchronous data strobes.

Designed for general applications that require high-speed volatile memory, the device provides flexible power options (SSTL_135 and SSTL_15), a compact 96-ball BGA package, and on-die features for signal integrity and power management.

Key Features

• Memory Core & Organization 2.147 Gbit density organized as 16M × 16 I/Os × 8 banks with a 2 KB page size per bank.
• High-speed DDR3(L) Interface JEDEC DDR3(L) compliant with differential CK/CK and DQS/DQS signals and double-data-rate operation on DQ, DQS and DM.
• Supported Data Rates & Timing Device variants support operation up to 1066 MHz (DDR3-2133) and 933 MHz (DDR3-1866); programmable CAS latencies and write recovery timings are available as listed in the datasheet.
• Power Supply Options Supports SSTL_135 (VDD/VDDQ = 1.35V -0.067V/+0.1V) and SSTL_15 (VDD/VDDQ = 1.5V ±0.075V) power rails.
• Signal Integrity & Calibration Configurable drive strength (DS) and on-die termination (ODT) settings, ZQ calibration for impedance accuracy, and write/read leveling functions via MR and MPR.
• Power Management Auto Refresh, Self Refresh (normal/extended), Partial Array Self Refresh (PASR), and Power Down modes to support system-level power control.
• Programmability & Operation Modes Wide range of CAS Latency and CAS Write Latency options, additive latency settings, burst type/length control, and precharge power-down modes.
• Package & Temperature Surface-mount 96 Ball BGA package; commercial-grade operating temperature range 0 °C to 85 °C. RoHS compliant.

Typical Applications

• JEDEC DDR3(L) system memory — Use as standard-compliant volatile memory in systems requiring 2 Gb DDR3(L) density and JEDEC interoperability.
• High-speed memory subsystems — Implement where double-data-rate transfers and differential clock/DQS timing are required to meet throughput targets up to the device’s rated frequency.
• Compact board designs — Ideal for designs that require a surface-mount 96-ball BGA DRAM package within a commercial temperature range.

Unique Advantages

• JEDEC-compliant DDR3(L) — Ensures standard timing, signaling and interoperability for DDR3(L)-based designs.
• Dual supply compatibility — Supports both 1.35 V and 1.5 V SSTL interfaces to match system power rails and design choices.
• Comprehensive signal integrity controls — Configurable DS, ODT and ZQ calibration improve timing margins and impedance matching on high-speed interfaces.
• Flexible timing and burst control — Multiple CAS latency and burst length options enable tuning for performance and memory subsystem behavior.
• Power management features — Auto/self-refresh, PASR and power-down modes support system-level power optimization.
• Compact, manufacturable package — 96-ball BGA surface-mount package suitable for dense PCB layouts and automated assembly.

Why Choose M15T2G16128A (2D)?

The M15T2G16128A (2D) positions itself as a JEDEC-compliant DDR3(L) DRAM option for designs that need a 2 Gb density, flexible supply options (1.35 V / 1.5 V), and robust signal-integrity features such as configurable ODT/DS and ZQ calibration. Its 8-bank 16M × 16 organization and programmable timing parameters provide designers with control over performance and system behavior.

This device is well suited to engineers specifying standardized DDR3(L) memory: it offers documented timings, power modes, and a compact 96-ball BGA footprint from ESMT, backed by the product datasheet specifications for integration and validation.

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