M15T2G16128A-BDBG2R

The M15T2G16128A-BDBG2R is a 2.147 Gbit DDR3(L) SDRAM organized as 128M × 16 with an 8-bank architecture and 8n prefetch. This device implements double-data-rate transfer, differential clock and data-strobe signaling, and supports DDR3(L)-1600 timing at an effective 800 MHz clock.

Designed for systems that require synchronous high-speed DRAM with flexible voltage operation, the device supports both 1.35 V and 1.5 V supplies and includes signal-integrity and power-saving features for reliable memory operation across a wide operating temperature range.

Key Features

• Memory Organization: 2.147 Gbit capacity arranged as 128M × 16 with 8 banks, providing standard DDR3(L) density and access structure.
• Performance: Supports an 800 MHz clock (DDR3(L)-1600, listed for 11-11-11 timing), with documented access time of 13.75 ns and a write cycle time (word page) of 15 ns.
• Dual Voltage Operation: SSTL_135 and SSTL_15 compatible with VDD/VDDQ = 1.35 V (−0.067 V/+0.1 V) or 1.5 V (±0.075 V), enabling system-level voltage flexibility.
• JEDEC DDR3(L) Compliant: Implements JEDEC-defined DDR3(L) features and timing options to match standard system controllers and memory interfaces.
• Signal and Timing Controls: Differential clock (CK/CK) and differential DQS/DQS, configurable drive-strength (DS), on-die termination (ODT) options, and ZQ calibration for impedance accuracy.
• Data Integrity and Power Modes: Auto Refresh, Self Refresh, Power Down, Partial Array Self Refresh (PASR), and programmable refresh/timing parameters to balance performance and power.
• Read/Write Leveling and Programmability: Supports write leveling (via MR settings) and read leveling (via MPR) plus a range of CAS latencies and programmable burst lengths to match system timing requirements.
• Package and Mounting: 96-ball BGA surface-mount package for compact board-level integration and high-density assembly.
• Temperature Range: Specified operating temperature from −40 °C to 105 °C for use in thermally demanding environments.
• Compliance and Environmental: JEDEC qualification and RoHS compliant.

Typical Applications

• General high-speed memory applications: For systems requiring synchronous DDR3(L) operation and up to DDR3-1600 effective data rates.
• Voltage-flexible designs: Suited to designs that need operation at either 1.35 V or 1.5 V supply rails.
• Compact, board-level memory implementations: 96-ball BGA package enables high-density mounting where board space is constrained.
• Thermally demanding environments: Applications that require operation across a wide temperature range (−40 °C to 105 °C).

Unique Advantages

• Dual-voltage compatibility: Supports both 1.35 V and 1.5 V supplies, allowing the same device to be used in systems with different power domains.
• Flexible timing options: Programmable CAS latencies, write recovery, and burst-length settings enable tuning for system performance and latency requirements.
• Signal integrity controls: Configurable drive strength, multiple ODT settings, and ZQ calibration help maintain signal and impedance accuracy in high-speed designs.
• Power management features: Multiple refresh and power-down modes (including PASR and self-refresh) provide options to reduce power consumption when full performance is not required.
• Compact BGA package: 96-ball BGA allows high-density board designs while maintaining standard DRAM footprint practices.
• Standards-based interoperability: JEDEC DDR3(L) compliance supports integration with standard memory controllers and system designs.

Why Choose M15T2G16128A-BDBG2R?

The M15T2G16128A-BDBG2R delivers a standards-based DDR3(L) memory building block with flexible voltage operation, programmable timing, and a comprehensive set of signal-integrity and power-management features. Its 128M × 16 organization, 8-bank architecture, and 96-ball BGA package make it appropriate for designs that require conventional DDR3(L) density and board-level integration.

With JEDEC compliance, configurable termination and drive strength, and operational support across −40 °C to 105 °C, this device is suited to engineers looking for a predictable, programmable DDR3(L) DRAM solution that can be tailored to system timing and power requirements.

Request a quote or submit a materials request to evaluate the M15T2G16128A-BDBG2R for your next design. Our team can provide pricing, availability, and technical documentation to support qualification and integration.