M15T2G16128A-DEBG2R

The M15T2G16128A-DEBG2R is a 2Gb DDR3(L) SDRAM device organized as 128M × 16 with eight internal banks and a synchronous double-data-rate architecture. It supports high-speed transfers (DDR3(L)-1866 timing at the 933 MHz clock configuration) and conforms to JEDEC DDR3(L) specifications.

This device targets general high-speed memory applications that require configurable timing and signal features, low-voltage operation options (1.35V or 1.5V), and a compact 96‑ball BGA surface-mount package. It delivers programmable latency and termination features to aid integration into system designs.

Key Features

• Core & Architecture — 8‑bank DDR3(L) architecture with 8n prefetch, organized as 16Mbit × 16 I/Os × 8 banks for synchronous double-data-rate operation.
• Memory & Performance — 2.147 Gbit capacity (128M × 16) with a 933 MHz clock configuration supporting DDR3(L)-1866 data rate and typical access times such as 13.75 ns.
• Voltage & Power — Supports SSTL_135 (VDD/VDDQ = 1.35V) and SSTL_15 (VDD/VDDQ = 1.5V) ranges, enabling low-voltage or standard DDR3 operating modes.
• Timing & Programmability — Programmable CAS latencies (5–14), CAS write latencies (5–10), additive latency options, burst length control (BL8/BC4), and multiple write recovery time settings for flexible timing tuning.
• Signal & Data Integrity — Differential CK/CK and DQS/DQS clocking, source‑synchronous DQS, configurable output driver strength (DS), configurable on‑die termination (RTT_Nom and RTT_WR) and ZQ calibration for impedance accuracy.
• Reliability & Power Modes — JEDEC-compliant auto refresh, self refresh, partial array self refresh (PASR), power down and precharge power down options to manage power and retention.
• Interface & Packaging — Parallel memory interface in a 96‑ball BGA surface‑mount package suitable for compact board designs; RoHS compliant.
• Operating Range — Specified operating temperature range of −40°C to 105°C for broad environmental tolerance.

Typical Applications

• General high-speed memory systems — Synchronous DDR3(L) storage for systems requiring volatile high-bandwidth memory in general applications.
• Low-voltage designs — Systems that can take advantage of 1.35V operation to reduce power consumption while maintaining DDR3 performance characteristics.
• Compact, surface-mount assemblies — Designs requiring a small BGA footprint with parallel interface memory in a 96‑ball package.

Unique Advantages

• Flexible voltage operation — Dual support for 1.35V and 1.5V supplies enables deployment in both low-voltage and standard DDR3 domains.
• Configurable signal conditioning — On‑die termination and configurable drive strengths plus ZQ calibration simplify tuning for signal integrity across system conditions.
• Programmable timing options — Wide range of CAS and write latencies, additive latency and burst controls allow designers to match memory timing to system requirements.
• Comprehensive power modes — Auto refresh, self refresh, PASR and power‑down features provide multiple options for managing power and retention.
• JEDEC compliance — Conformance to DDR3(L) JEDEC standards supports predictable behavior and interoperability in JEDEC‑based designs.
• Wide temperature tolerance — Specified −40°C to 105°C operating range supports deployment across a broad set of environmental conditions.

Why Choose M15T2G16128A-DEBG2R?

The M15T2G16128A-DEBG2R offers a JEDEC‑compliant DDR3(L) solution with flexible voltage operation, comprehensive timing programmability and signal integrity features that simplify integration into synchronous memory systems. Its 128M×16 organization with eight internal banks and 8n prefetch architecture delivers the performance characteristics expected of DDR3(L) components while offering configurable termination and calibration for reliable data transfer.

This device is well suited for designs that need a compact BGA memory package with selectable voltage modes and extensive timing control. The combination of JEDEC compliance, programmable features and RoHS status supports long‑term procurement and system design consistency.

Request a quote or submit a purchase inquiry to evaluate M15T2G16128A-DEBG2R for your next memory design.