M15T2G16128A-DEBG2D

2Gb DDR3L SDRAM Ind.
Part Description

DDR3L SDRAM 2Gb 128M×16 933MHz DDR3(L)-1866 96 Ball BGA

Quantity 1,651 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package96 Ball BGAMemory FormatDRAMTechnologyDDR3L
Memory Size2 GbitAccess Time13.91 nsGradeIndustrial
Clock Frequency933 MHzVoltage1.35V, 1.5VMemory TypeVolatile
Operating Temperature-40°C – 95°CWrite Cycle Time Word Page15 nsPackaging96 Ball BGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization128M x 16
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.36

Overview of M15T2G16128A-DEBG2D – DDR3L SDRAM 2Gb 128M×16 933MHz DDR3(L)-1866 96 Ball BGA

The M15T2G16128A-DEBG2D is a 2Gb DDR3(L) SDRAM device organized as 128M×16 with an eight-bank architecture and 8n prefetch. It delivers DDR3(L)-1866 performance (933 MHz clock) in a compact 96-ball BGA surface-mount package.

Designed and qualified to JEDEC DDR3(L) specifications and offered in industrial grade (-40 °C to 95 °C), this device suits embedded and industrial memory applications that require low-voltage operation (1.35 V) with backward compatibility to 1.5 V supplies.

Key Features

  • Density & Organization — 2.147 Gbit capacity organized as 128M × 16, providing a 16-bit-wide parallel interface for system memory expansion.
  • Performance — 933 MHz clock frequency delivering DDR3(L)-1866 data rate (13-13-13 timing option). Access time of 13.91 ns and write cycle time (word/page) of 15 ns.
  • Voltage & Power — Supports SSTL_135 (VDD/VDDQ = 1.35 V) and SSTL_15 (VDD/VDDQ = 1.5 V) power rails for low-voltage operation and compatibility with DDR3 systems.
  • JEDEC Compliance — DDR3(L) JEDEC-compliant signaling, timing and register/function support for standardized system integration.
  • Data & Signal Architecture — Differential CLK (CK/CK) and differential data strobe (DQS/DQS) with source-synchronous DQ transfers; double-data-rate on DQ, DQS and DM.
  • Timing & Programmability — Programmable CAS latency (5–14), CAS write latency options, additive latency choices, programmable write recovery and burst options (BL8/BC4 and on-the-fly BL switching).
  • Signal Integrity & Calibration — Configurable drive strength (DS), configurable on-die termination (ODT) including RTT_NOM and RTT_WR options, plus ZQ calibration via external ZQ pad (240 Ω ±1%).
  • Memory Reliability & Power Modes — Auto Refresh, Self Refresh (normal/extended), Power Down, Partial Array Self Refresh (PASR) and precharge power-down (slow/fast) to manage power and data integrity.
  • Board & Thermal — 96-ball BGA package, surface-mount mounting, industrial operating temperature range of -40 °C to 95 °C.
  • Compliance — RoHS compliant and JEDEC qualified.

Typical Applications

  • Industrial Control and Automation — Industrial-grade temperature rating (-40 °C to 95 °C) and JEDEC compliance make this device suitable for embedded controllers and industrial memory subsystems.
  • Embedded Computing — 2Gb density and 16-bit parallel interface provide high-bandwidth local memory for embedded processors and system-on-module designs.
  • Networking and Communications Equipment — DDR3(L)-1866 data rate and configurable termination/drive-strength options help meet latency and signal-integrity needs in networking line cards and telecommunication modules.

Unique Advantages

  • Flexible Voltage Operation: Dual supply support (1.35 V and 1.5 V) enables low-power DDR3(L) designs and compatibility with legacy DDR3 rails.
  • Industrial Temperature Capability: Specified for -40 °C to 95 °C to support harsh-environment applications.
  • Standardized Interoperability: JEDEC DDR3(L) compliance simplifies integration into DDR3 memory controllers and established system designs.
  • Signal Integrity Controls: Configurable DS and on-die termination plus ZQ calibration improve timing margins and impedance accuracy for high-speed links.
  • Programmable Timing: Wide range of CAS latencies, write recovery and burst settings provide tuning flexibility across system requirements.
  • Compact SMT Package: 96-ball BGA surface-mount package saves PCB area while providing a reliable solder-down footprint for production assemblies.

Why Choose M15T2G16128A-DEBG2D?

The M15T2G16128A-DEBG2D combines DDR3(L)-1866 performance (933 MHz clock) with industrial-grade thermal tolerance and JEDEC compliance, offering a reliable, compact memory option for embedded, industrial, and networking designs. Its programmable timing, configurable termination and low-voltage operation provide design flexibility for systems that require robust high-speed memory in challenging environments.

This device is appropriate for engineers and procurement teams seeking a standardized DDR3(L) memory component with documented electrical, timing and package specifications for integration into industrial and embedded platforms.

Request a quote or submit an inquiry for M15T2G16128A-DEBG2D to receive pricing, availability and ordering information.

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