M15T2G16128A-DEBG2D
| Part Description |
DDR3L SDRAM 2Gb 128M×16 933MHz DDR3(L)-1866 96 Ball BGA |
|---|---|
| Quantity | 1,651 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 96 Ball BGA | Memory Format | DRAM | Technology | DDR3L | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 2 Gbit | Access Time | 13.91 ns | Grade | Industrial | ||
| Clock Frequency | 933 MHz | Voltage | 1.35V, 1.5V | Memory Type | Volatile | ||
| Operating Temperature | -40°C – 95°C | Write Cycle Time Word Page | 15 ns | Packaging | 96 Ball BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 128M x 16 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.36 |
Overview of M15T2G16128A-DEBG2D – DDR3L SDRAM 2Gb 128M×16 933MHz DDR3(L)-1866 96 Ball BGA
The M15T2G16128A-DEBG2D is a 2Gb DDR3(L) SDRAM device organized as 128M×16 with an eight-bank architecture and 8n prefetch. It delivers DDR3(L)-1866 performance (933 MHz clock) in a compact 96-ball BGA surface-mount package.
Designed and qualified to JEDEC DDR3(L) specifications and offered in industrial grade (-40 °C to 95 °C), this device suits embedded and industrial memory applications that require low-voltage operation (1.35 V) with backward compatibility to 1.5 V supplies.
Key Features
- Density & Organization — 2.147 Gbit capacity organized as 128M × 16, providing a 16-bit-wide parallel interface for system memory expansion.
- Performance — 933 MHz clock frequency delivering DDR3(L)-1866 data rate (13-13-13 timing option). Access time of 13.91 ns and write cycle time (word/page) of 15 ns.
- Voltage & Power — Supports SSTL_135 (VDD/VDDQ = 1.35 V) and SSTL_15 (VDD/VDDQ = 1.5 V) power rails for low-voltage operation and compatibility with DDR3 systems.
- JEDEC Compliance — DDR3(L) JEDEC-compliant signaling, timing and register/function support for standardized system integration.
- Data & Signal Architecture — Differential CLK (CK/CK) and differential data strobe (DQS/DQS) with source-synchronous DQ transfers; double-data-rate on DQ, DQS and DM.
- Timing & Programmability — Programmable CAS latency (5–14), CAS write latency options, additive latency choices, programmable write recovery and burst options (BL8/BC4 and on-the-fly BL switching).
- Signal Integrity & Calibration — Configurable drive strength (DS), configurable on-die termination (ODT) including RTT_NOM and RTT_WR options, plus ZQ calibration via external ZQ pad (240 Ω ±1%).
- Memory Reliability & Power Modes — Auto Refresh, Self Refresh (normal/extended), Power Down, Partial Array Self Refresh (PASR) and precharge power-down (slow/fast) to manage power and data integrity.
- Board & Thermal — 96-ball BGA package, surface-mount mounting, industrial operating temperature range of -40 °C to 95 °C.
- Compliance — RoHS compliant and JEDEC qualified.
Typical Applications
- Industrial Control and Automation — Industrial-grade temperature rating (-40 °C to 95 °C) and JEDEC compliance make this device suitable for embedded controllers and industrial memory subsystems.
- Embedded Computing — 2Gb density and 16-bit parallel interface provide high-bandwidth local memory for embedded processors and system-on-module designs.
- Networking and Communications Equipment — DDR3(L)-1866 data rate and configurable termination/drive-strength options help meet latency and signal-integrity needs in networking line cards and telecommunication modules.
Unique Advantages
- Flexible Voltage Operation: Dual supply support (1.35 V and 1.5 V) enables low-power DDR3(L) designs and compatibility with legacy DDR3 rails.
- Industrial Temperature Capability: Specified for -40 °C to 95 °C to support harsh-environment applications.
- Standardized Interoperability: JEDEC DDR3(L) compliance simplifies integration into DDR3 memory controllers and established system designs.
- Signal Integrity Controls: Configurable DS and on-die termination plus ZQ calibration improve timing margins and impedance accuracy for high-speed links.
- Programmable Timing: Wide range of CAS latencies, write recovery and burst settings provide tuning flexibility across system requirements.
- Compact SMT Package: 96-ball BGA surface-mount package saves PCB area while providing a reliable solder-down footprint for production assemblies.
Why Choose M15T2G16128A-DEBG2D?
The M15T2G16128A-DEBG2D combines DDR3(L)-1866 performance (933 MHz clock) with industrial-grade thermal tolerance and JEDEC compliance, offering a reliable, compact memory option for embedded, industrial, and networking designs. Its programmable timing, configurable termination and low-voltage operation provide design flexibility for systems that require robust high-speed memory in challenging environments.
This device is appropriate for engineers and procurement teams seeking a standardized DDR3(L) memory component with documented electrical, timing and package specifications for integration into industrial and embedded platforms.
Request a quote or submit an inquiry for M15T2G16128A-DEBG2D to receive pricing, availability and ordering information.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
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